公开(公告)号：US20070134435A1

公开(公告)日：2007-06-14

申请号：US11304847

申请日：2005-12-13

申请人： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

发明人： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  C08J7/04

CPC分类号： C23C16/401 ,  C08J7/065 ,  C08J7/08 ,  C08J7/12 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31633

摘要： A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.

摘要翻译： 提供了一种从包含两种有机硅化合物的混合物在室中的衬底上沉积低介电常数膜的方法。 该混合物还可包括烃化合物和氧化气体。 第一有机硅化合物每Si原子平均具有一个或多个Si-C键。 第二有机硅化合物具有比Si原子中Si-C键的平均数大于第一有机硅化合物中每Si原子的Si-C键的平均数。 低介电常数膜具有良好的等离子/湿蚀刻损伤电阻，良好的机械性能和期望的介电常数。

公开(公告)号：US20080099920A1

公开(公告)日：2008-05-01

申请号：US11876668

申请日：2007-10-22

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： H01L23/538 ,  B32B3/00

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20050230834A1

公开(公告)日：2005-10-20

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20060231524A1

公开(公告)日：2006-10-19

申请号：US11422031

申请日：2006-06-02

申请人： Wei Liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Christopher Bencher

发明人： Wei Liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Christopher Bencher

IPC分类号： C23F1/00 ,  B44C1/22 ,  G03C5/00 ,  H01L21/302 ,  C03C25/68

CPC分类号： G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146

摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

摘要翻译： 提供蚀刻基板的方法。 蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。 任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

公开(公告)号：US20060207294A1

公开(公告)日：2006-09-21

申请号：US11422278

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/018 ,  C03B37/022

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

公开(公告)号：US07080528B2

公开(公告)日：2006-07-25

申请号：US10279366

申请日：2002-10-23

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/018

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

公开(公告)号：US20050167394A1

公开(公告)日：2005-08-04

申请号：US10768724

申请日：2004-01-30

申请人： Wei liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Chistopher Bencher

发明人： Wei liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Chistopher Bencher

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/314 ,  C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC分类号： G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146

摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

摘要翻译： 提供蚀刻基板的方法。 蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。 任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

公开(公告)号：US07383702B2

公开(公告)日：2008-06-10

申请号：US11422278

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： G02B6/10 ,  C03B37/018

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

公开(公告)号：US07325419B2

公开(公告)日：2008-02-05

申请号：US11422299

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/022 ,  G02B6/10

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

公开(公告)号：US20060266081A1

公开(公告)日：2006-11-30

申请号：US11422299

申请日：2006-06-05

申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B37/022 ,  C03B37/018 ,  C03C25/00

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。