Abstract:
An image enhancement apparatus and method based on luminance information of a pixel. The image enhancement apparatus may determine luminance data of each of a plurality of pixels, and may adaptively determine a conversion ratio according to the luminance data to apply the conversion ratio to an input image, thereby performing image-enhancing. The image enhancement apparatus may adaptively converse the input image according to luminance data, thereby precisely and effectively performing image-enhancing.
Abstract:
Disclosed is a light emitting device module. The light emitting device module includes a first lead frame and a second lead frame electrically separated from each other, a light emitting device electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a dam disposed at the peripheral area of the light emitting device, a resin layer surrounding the light emitting device and disposed at the inner area of the dam, and a reflective member disposed at the peripheral area of the dam and including an inclined plane formed on at least one side surface thereof.
Abstract:
An apparatus and method for allowing a user to dynamically enjoy a video. A difference between image data is computed at every preset unit of time and a vibration corresponding to the computed difference is generated so that the user can sense a motion change of an object within the video. Upon video reproduction, scenes are displayed by applying the lighting effect of a strobe light or the like between the scenes to be reproduced. Upon video reproduction, more enjoyment and various haptic effects can be provided to the user.
Abstract:
In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.
Abstract:
Provided are a non geostationary satellite orbit (NGSO) communication apparatus that extends an operation time using an ancillary territory component (ATC) and reduces a number of satellites, and an ATC and an operating method thereof. The NGSO communication apparatus extends an operation time using an ATC and reduces a number of satellites from a first ATC that communicates with a mobile earth station (MES), and a second ATC that communicates with the first ATC to relay data between the MES and the satellite when the first ATC is unable to communication with the satellite revolving along an orbit.
Abstract:
A personal portable terminal and an operating method of a multimedia terminal device are provided, and more particularly, a multimedia terminal device, an operating method of the multimedia terminal device, and a personal portable terminal are provided. The multimedia terminal device may receive bidirectional content and additional service information corresponding to the bidirectional content, may classify the received additional service information from the received bidirectional content, and may transmit the classified additional service information to a personal portable terminal that is registered in advance and that is connected wired or wirelessly to the multimedia terminal device.
Abstract:
A power controlled adaptive modulation and coding (AMC) scheme in a satellite communications system includes: calculating, by a user terminal, a received signal-to-noise ratio (SNR) through a packet received from a base station; removing a power control level applied to a packet received before the received packet from the calculated received SNR, and deciding the value obtained by decreasing the calculated received SNR by the power control level; deciding an AMC mode based on the decided received SNR; determining whether power control is required, and deciding a required power control magnitude depending on a channel state positioned in the AMC mode range; transmitting the decided AMC mode and the decided power control information to the base station through channel quality indicator (CQI) feedback; and applying the AMC mode based on information received, and increasing a power by a power control magnitude decided from the received information.
Abstract:
Disclosed is a sensing apparatus, a network system, and a controlling method on the basis of a satellite. A satellite-based sensing network system, comprising: a plurality of satellite transmitters that collect information on a peripheral environment and an operating state, and transmits it to peripheral satellites; a satellite wireless receiving/display device that directly receives and displays the information collected from the satellites; a ground control center that receives, stores, and analyzes the information collected from the satellites; and a management center that maintains and repairs the satellite transmitter based on the analyzed results.
Abstract:
A system for controlling temperature of an antenna module including a heat generating module, and a radome and an underbody cover that enclose the heat generating module. The system includes: a heat collecting unit mounted on inner surface of the antenna module; a heat discharging unit mounted on outer surface of the antenna module; and a heat transfer unit for transferring heat from the heat collecting unit to the heat discharging unit.
Abstract:
Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of the interconnect hole. The semiconductor substrate at a bottom of the interconnect hole is isotropically etched to define an undercut recess in the semiconductor substrate. This etching step is performed using the first sidewall spacer layer as an etching mask. The interconnect hole and the uncut recess are then filled with a through-via electrode. A second surface of the semiconductor substrate is removed for a sufficient duration to expose the uncut recess containing the through-via electrode.