TRANSITION METAL NITRIDE DEPOSITION METHOD

    公开(公告)号:US20220411919A1

    公开(公告)日:2022-12-29

    申请号:US17849077

    申请日:2022-06-24

    Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

    SELECTIVE DEPOSITION OF TRANSITION METAL-CONTAINING MATERIAL

    公开(公告)号:US20220254642A1

    公开(公告)日:2022-08-11

    申请号:US17667013

    申请日:2022-02-08

    Abstract: The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices In the disclosure, a transition metal-containing material is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first material, and a second surface comprising a second material. A transition metal precursor comprising a transition metal halide compound is provided in the reaction chamber in vapor phase and a second precursor is provided in the reaction chamber in vapor phase to deposit a transition metal-containing material on the first surface relative to the second surface. A transition metal compound may comprise an adduct-forming ligand. Further, a deposition assembly for depositing transition metal-comprising material is disclosed.

    MOLYBDENUM DEPOSITION METHOD
    119.
    发明申请

    公开(公告)号:US20220139713A1

    公开(公告)日:2022-05-05

    申请号:US17511837

    申请日:2021-10-27

    Abstract: The current disclosure relates to methods of depositing molybdenum on a substrate. The disclosure further relates to a molybdenum layer, to a structure and to a device comprising a molybdenum layer. In the method, molybdenum is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a molybdenum precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form molybdenum on the substrate. The molybdenum precursor comprises a molybdenum atom and a hydrocarbon ligand, and the reactant comprises a hydrocarbon comprising two or more halogen atoms, and at least two halogen atoms are attached to different carbon atoms.

    METHOD OF FORMING AN ENHANCED UNEXPOSED PHOTORESIST LAYER

    公开(公告)号:US20210247693A1

    公开(公告)日:2021-08-12

    申请号:US17231299

    申请日:2021-04-15

    Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

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