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公开(公告)号：US08764907B2
公开(公告)日：2014-07-01
申请号：US12569674
申请日：2009-09-29
CPC分类号： B25J5/00 , B08B1/00 , B08B9/00 , H01J37/32743 , H01J37/32862 , H01L21/67751 , Y10T29/49723
摘要： A method for servicing a plasma processing system. The plasma processing system may include a plasma chamber. The plasma chamber may include a top piece and a bottom piece, wherein the top piece may be disposed above the bottom piece. The method may include using a robot device to control a lift mechanism to lift the top piece from the bottom piece. The method may also include extending a first member of the robot device into the top piece to perform a first set of tasks according to a first set of service procedures. The method may also include extending a second member of the robot device into the bottom piece to perform a second set of tasks according to a second set of service procedures.
摘要翻译： 一种维修等离子体处理系统的方法。 等离子体处理系统可以包括等离子体室。 等离子体室可以包括顶部件和底部件，其中顶部件可以设置在底部件的上方。 该方法可以包括使用机器人装置来控制提升机构以从底部件抬起顶部件。 该方法还可以包括将机器人装置的第一部件延伸到顶部件中，以根据第一组服务程序执行第一组任务。 该方法还可以包括将机器人装置的第二构件延伸到底部件中，以根据第二组服务程序执行第二组任务。
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公开(公告)号：US20120273134A1
公开(公告)日：2012-11-01
申请号：US13547700
申请日：2012-07-12
IPC分类号： B08B13/00
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.
摘要翻译： 提供了一种用于清洁基板的斜边缘的等离子体处理室。 该室包括围绕绝缘板的顶边电极，绝缘体板与底部电极相对。 顶边电极通过顶部介质环电接地并与绝缘体板分离。 该腔室还包括底部电极，其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。 底边电极被定向为与顶边缘电极相对，并且底边电极具有面向上的L形。 衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。
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公开(公告)号：US08257503B2
公开(公告)日：2012-09-04
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C25F3/30
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。
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114.发明授权Gas modulation to control edge exclusion in a bevel edge etching plasma chamber 有权气体调制，用于控制斜边蚀刻等离子体室中的边缘排除公开(公告)号：US08083890B2
公开(公告)日：2011-12-27
申请号：US12021177
申请日：2008-01-28
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。
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115.发明申请METHODS TO REMOVE FILMS ON BEVEL EDGE AND BACKSIDE OF WAFER AND APPARATUS THEREOF 有权方法移除水平边缘和背面的薄膜及其装置公开(公告)号：US20110209725A1
公开(公告)日：2011-09-01
申请号：US13053037
申请日：2011-03-21
申请人： Yunsang Kim , Andrew D. Bailey, III
发明人： Yunsang Kim , Andrew D. Bailey, III
IPC分类号： B08B7/00
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： A method of cleaning a bevel edge of a substrate in an etch processing chamber is provided. The method includes placing a substrate on a substrate support in a processing chamber. The method also includes flowing a cleaning gas through a gas feed located near a center of a gas distribution plate, disposed at a distance from the substrate support. The method further includes generating a cleaning plasma near a bevel edge of the substrate to clean the bevel edge by powering a bottom edge electrode or a top edge electrode with a RF power source and grounding the edge electrode that is not powered by the RF power source, the bottom edge electrode surrounds the substrate support and the top edge electrode surrounds the gas distribution plate.
摘要翻译： 提供了一种在蚀刻处理室中清洁衬底的斜边缘的方法。 该方法包括将衬底放置在处理室中的衬底支撑件上。 该方法还包括使清洁气体流过设置在与衬底支撑件相距一定距离处的气体分配板的中心附近的气体进料。 该方法还包括在衬底的斜边缘附近产生清洁等离子体，以通过用RF电源为底部边缘电极或顶部边缘电极供电来清洁斜面边缘，并且将不由RF电源供电的边缘电极接地 底部边缘电极围绕基板支撑件，并且顶部边缘电极围绕气体分配板。
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公开(公告)号：US20110186227A1
公开(公告)日：2011-08-04
申请号：US13084849
申请日：2011-04-12
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译： 这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。 在一个示例中，提供了用于晶片斜面边缘清洁的室。 该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。 还包括围绕绝缘板的顶边电极。 绝缘板与底部电极相对。 顶边电极电接地并具有向下的L形状。 还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。 下边缘电极被设置成环绕底部电极。 底部边缘电极被定向成与顶部边缘电极的向下的L形相对。
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公开(公告)号：US07943007B2
公开(公告)日：2011-05-17
申请号：US11698190
申请日：2007-01-26
IPC分类号： H01L21/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。
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公开(公告)号：US20100285671A1
公开(公告)日：2010-11-11
申请号：US12463155
申请日：2009-05-08
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31116
摘要： A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.
摘要翻译： 提供了一种用于在等离子体处理室中的光致抗蚀剂掩模下方形成低k电介质层中形成蚀刻特征的方法。 通过光致抗蚀剂掩模将特征蚀刻到低k电介质层中。 剥离光致抗蚀剂掩模，其中剥离包括至少一个循环，其中每个循环包括氟碳汽提相，包括将氟碳汽提气体流入等离子体处理室，从氟碳汽提气体形成等离子体，并停止 进入等离子体处理室中的碳氟化合物汽提气体和减少的氟碳汽提阶段，包括将具有低于碳氟化合物汽提气体的碳氟化合物流速低的氟化碳汽提气体流入等离子体处理室，从还原氟碳汽提气体形成等离子体 ，并停止还原氟烃剥离气体的流动。
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公开(公告)号：US20100100221A1
公开(公告)日：2010-04-22
申请号：US12653598
申请日：2009-12-15
CPC分类号： G05B19/41875 , G05B2219/31352 , G05B2219/32191 , Y02P90/22
摘要： A method for adjusting a data set defining a set of process runs, each process run having a set of data corresponding to a set of variables for a wafer processing operation is provided. A model derived from a data set is received. A new data set corresponding to one process run is received. The new data set is projected to the model. An outlier data point produced as a result of the projecting is identified. A variable corresponding to the one outlier data point is identified, the identified variable exhibiting a high contribution. A value for the variable from the new data set is identified. Whether the value for the variable is unimportant is determined. A normalized matrix of data is created, using random data and the variable that was determined to be unimportant from each of the new data set and the data set. The data set is updated with the normalized matrix of data.
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公开(公告)号：US07611640B1
公开(公告)日：2009-11-03
申请号：US11396124
申请日：2006-03-30
IPC分类号： C23F1/00 , H01L21/3065
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
摘要翻译： 公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。 等离子体处理室包括在基板处理期间具有朝向等离子体处理室中的等离子体的表面等离子体表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。 等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。 接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。
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