DISPLAY DEVICE AND ACTIVE ELEMENT SUBSTRATE

    公开(公告)号:US20170373014A1

    公开(公告)日:2017-12-28

    申请号:US15628415

    申请日:2017-06-20

    Abstract: A display device is provided. The display device includes a first substrate, a second substrate, a display layer, an active element layer, and a planar layer disposed on the active element layer. The planar layer includes a first contact hole. The display device further includes an electrode pad disposed on the planar layer. The display device further includes a passivation layer disposed on the electrode pad and the planar layer. The passivation layer includes a second contact hole. The first contact hole partially overlaps the second contact hole. The second contact hole has a projection on the planar layer and on the active element layer located at the bottom of the first contact hole, and the greatest width of the projection is at a first axis. The width of the electrode pad perpendicular to the first axis has a specific width change.

    DISPLAY PANELS
    118.
    发明申请
    DISPLAY PANELS 有权
    显示面板

    公开(公告)号:US20160131929A1

    公开(公告)日:2016-05-12

    申请号:US14792874

    申请日:2015-07-07

    Abstract: A display panel is provided. The display panel includes a first substrate having a display area and a non-display area. A sealant is disposed on the first substrate and on the non-display area. A planarization layer is disposed on the first substrate. The planarization layer has a first trench formed therein on the non-display area. The first trench has a bottom and a side adjacent to the bottom. The bottom has a roughness that is greater than the roughness of the side.

    Abstract translation: 提供显示面板。 显示面板包括具有显示区域和非显示区域的第一基板。 密封剂设置在第一基板上和非显示区域上。 平坦化层设置在第一基板上。 平坦化层在非显示区域上形成有第一沟槽。 第一沟槽具有底部和邻近底部的一侧。 底部的粗糙度大于侧面的粗糙度。

    MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY DEVICE
    119.
    发明申请
    MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY DEVICE 审中-公开
    薄膜晶体管和显示器件的制造方法

    公开(公告)号:US20130207104A1

    公开(公告)日:2013-08-15

    申请号:US13764419

    申请日:2013-02-11

    Inventor: Kuan-Feng LEE

    Abstract: An embodiment of the invention provides a manufacturing method of a thin film transistor including: providing a substrate; sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, and an active layer on the substrate; forming a conductive layer on the active layer and including a source electrode, a drain electrode, and a separating portion connecting therebetween; forming a first photoresist layer on the conductive layer and covering the source electrode and the drain electrode and exposing the separating portion; oxidizing the separating portion into an insulating metal oxide layer so as to electrically insulate the source electrode from the drain electrode; and removing the first photoresist layer.

    Abstract translation: 本发明的实施例提供一种薄膜晶体管的制造方法,包括:提供基板; 依次形成栅电极,覆盖栅电极的栅极绝缘层和衬底上的有源层; 在有源层上形成导电层,包括源电极,漏电极和连接在其间的分离部分; 在所述导电层上形成第一光致抗蚀剂层并覆盖所述源电极和所述漏电极并使所述分离部分露出; 将分离部分氧化成绝缘金属氧化物层,以使源电极与漏电极电绝缘; 并除去第一光致抗蚀剂层。

    THIN FILM TRANSISTOR SUBSTRATE MANUFACTURING METHOD THEREOF, DISPLAY
    120.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE MANUFACTURING METHOD THEREOF, DISPLAY 有权
    薄膜晶体管基板制造方法,显示

    公开(公告)号:US20130161622A1

    公开(公告)日:2013-06-27

    申请号:US13722570

    申请日:2012-12-20

    Inventor: Kuan-Feng LEE

    Abstract: An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.

    Abstract translation: 本发明的一个实施例提供一种薄膜晶体管衬底的制造方法,包括:在第一衬底上依次形成栅电极,覆盖栅电极的栅极绝缘层,活性材料层和光敏材料层; 通过使用半色调掩模进行光刻处理,以形成位于栅电极之上并具有第一凹部和第二凹部的感光保护层; 通过使用光敏保护层作为掩模蚀刻活性物质层以形成活性层; 在所述第一凹部和所述第二凹部的底部移除所述光敏保护层的一部分,以分别暴露所述活性层的第一部分和第二部分; 形成连接到所述第一部分的第一电极; 以及形成连接到第二部分的第二电极。

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