公开(公告)号：US06835675B2

公开(公告)日：2004-12-28

申请号：US10316605

申请日：2002-12-10

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

IPC分类号： H01L2126

CPC分类号： G10L17/22 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H04M3/2281 ,  H04M3/229 ,  H04M3/382 ,  H04M3/385 ,  H04M2201/40 ,  H04Q3/0016

摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

摘要翻译： 一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。 还要求保护的是实现上述方法的激光照射装置。

公开(公告)号：US06835607B2

公开(公告)日：2004-12-28

申请号：US10028269

申请日：2001-12-28

申请人： Yasuhiko Takemura ,  Satoshi Teramoto

发明人： Yasuhiko Takemura ,  Satoshi Teramoto

IPC分类号： H01L2184

CPC分类号： H01L27/1248 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

摘要翻译： 本发明的薄膜晶体管具有至少包括形成在绝缘表面上的源极，漏极和沟道区的有源层。 在沟道区域和源极和漏极区域中的每一个之间形成高电阻率区域。 至少在高电阻率区域上设置能够俘获正电荷的膜，使得在高电阻率区域中产生N型导电性。 因此，可以提高N沟道型TFT对热电子的可靠性。

公开(公告)号：US06831333B2

公开(公告)日：2004-12-14

申请号：US10309488

申请日：2002-12-03

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01C2904

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L29/78618 ,  H01L29/78621

摘要： To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.

摘要翻译： 为了提供具有低OFF特性的薄膜晶体管，并且提供P沟道型和N沟道型薄膜晶体管，其中P沟道型和N沟道型薄膜晶体管的特性差被校正， 在P沟道型薄膜晶体管的沟道形成区域134和漏极区域146之间配置具有比漏极区域146更多的P型特性的区域145，由此P沟道型薄膜晶体管具有 可以提供低OFF特性，并且在N沟道型薄膜晶体管中的沟道形成区域137和漏极区域127之间布置低浓度杂质区域136，由此具有低OFF特性的N沟道型薄膜晶体管和 可以抑制劣化。

公开(公告)号：US06790749B2

公开(公告)日：2004-09-14

申请号：US10241624

申请日：2002-09-12

申请人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

发明人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L2120

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78696 ,  Y10S257/90

摘要： An object of this invention is to provide a semiconductor device manufacturing method in which a semiconductor film is formed over a substrate, the semiconductor film is crystallized by irradiating a laser light, a silicon oxide film is formed in contact with the crystalline semiconductor film by using organic silane, a gate electrode is formed in contact with the silicon oxide film, an impurity element is introduced into the crystalline semiconductor film, the impurity element is activated, an interlayer insulating film is formed over the gate electrode, and then a wiring comprising aluminum is formed over the interlayer insulating film.

摘要翻译： 本发明的目的是提供一种半导体器件的制造方法，其中半导体膜形成在衬底上，半导体膜通过照射激光而结晶，通过使用通过使用氧化硅膜与晶体半导体膜接触形成氧化硅膜 有机硅烷，形成与氧化硅膜接触的栅电极，将杂质元素引入晶体半导体膜中，杂质元素被激活，在栅电极上形成层间绝缘膜，然后将包含铝的布线 形成在层间绝缘膜上。

公开(公告)号：US06753213B2

公开(公告)日：2004-06-22

申请号：US10288365

申请日：2002-11-06

申请人： Satoshi Teramoto ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Toshiji Hamatani ,  Shunpei Yamazaki

发明人： Satoshi Teramoto ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Toshiji Hamatani ,  Shunpei Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/2026 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67213 ,  H01L21/67225 ,  H01L21/67236

摘要： A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.

摘要翻译： 激光加工装置提供加热室，用于激光照射的腔室和机器人臂，其中在其上形成有用激光照射的硅膜的基板的温度被加热到450至750℃ 加热室，然后用激光照射硅膜，从而可以获得可以被认为是单晶的具有单晶或硅膜的硅膜。

公开(公告)号：US06743667B2

公开(公告)日：2004-06-01

申请号：US09773620

申请日：2001-02-02

申请人： Masamitsu Hiroki ,  Yasuhiko Takemura ,  Mutsuo Yamamoto ,  Naoaki Yamaguchi ,  Satoshi Teramoto

发明人： Masamitsu Hiroki ,  Yasuhiko Takemura ,  Mutsuo Yamamoto ,  Naoaki Yamaguchi ,  Satoshi Teramoto

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L29/78621

摘要： An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the semiconductor film, the source and drain regions are recrystallized by heating. During the recrystallization, the channel region having crystallinity functions as crystalline nuclei. Accordingly, it is possible to avoid defects occurring in the boundary regions between the channel region and source/drain regions.

摘要翻译： 包含硅的非晶半导体膜具有能够促进硅结晶的金属元素。 然后，半导体膜在相对较低的温度下憎恨而结晶。 在将杂质离子引入半导体膜的源极和漏极区域之后，通过加热使源极和漏极区域再结晶。 在重结晶期间，具有结晶性的沟道区域作为结晶核发挥作用。 因此，可以避免在沟道区域和源极/漏极区域之间的边界区域中发生的缺陷。

公开(公告)号：US06710410B2

公开(公告)日：2004-03-23

申请号：US10353164

申请日：2003-01-27

申请人： Shunpei Yamazaki ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Satoshi Teramoto

IPC分类号： H01L2972

CPC分类号： H01L27/13 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L29/78621 ,  H03H9/0547

摘要： There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.

公开(公告)号：USRE38266E1

公开(公告)日：2003-10-07

申请号：US09838216

申请日：2001-04-20

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  C03C17/3482 ,  C03C2218/152 ,  C03C2218/153 ,  H01L21/02532 ,  H01L21/2022 ,  H01L29/78675

摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

公开(公告)号：US06613613B2

公开(公告)日：2003-09-02

申请号：US09726336

申请日：2000-12-01

申请人： Shunpei Yamazaki ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Satoshi Teramoto

IPC分类号： C21

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1229 ,  H01L29/78654

摘要： A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor film, and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film. The crystalline semiconductor film of the second plurality of thin film transistors has a substantially single crystalline structure (mono-domain structure) and is doped with a recombination center neutralizer at a concentration of 1×1016 to 1×1020 atoms/cm3. The crystalline semiconductor film of the second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.

摘要翻译： 单片型有源矩阵半导体器件包括具有绝缘表面的衬底，形成在衬底上的第一多个薄膜晶体管，每个具有包括非晶硅半导体膜的第一沟道区和第二多个薄膜晶体管， 具有包括晶体半导体膜的第二沟道区。 第二多个薄膜晶体管的结晶半导体膜具有基本上单晶结构（单畴结构），并且掺杂有浓度为1×10 16至1×10 10原子/ cm 3的复合中心中和剂。 第二多个薄膜晶体管的结晶半导体膜包含能够促进硅结晶的催化剂元件。

公开(公告)号：US06610996B2

公开(公告)日：2003-08-26

申请号：US09940277

申请日：2001-08-27

申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L2904

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/30608 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/04

摘要： Semiconductor devices based on thin film transistors formed over substrates. In one embodiment, a semiconductor device comprises at least two thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other, and the deviation of the crystal axis is within ±10°.