公开(公告)号：US20090179288A1

公开(公告)日：2009-07-16

申请号：US12381356

申请日：2009-03-11

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: H01L29/84

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US20090127624A1

公开(公告)日：2009-05-21

申请号：US12289773

申请日：2008-11-04

Applicant: Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

Inventor： Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

IPC: H01L21/762 ,  H01L27/12

CPC classification number: H01L21/823481 ,  H01L21/26533 ,  H01L21/76243 ,  H01L21/76264 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Abstract translation: 半导体器件包括：SOI衬底，包括支撑层，第一绝缘膜和SOI层; 第一个电路; 第二电路; 和沟槽分离元件。 SOI衬底还包括第一区域和第二区域。 第一区域具有依次层叠的支撑层，第一绝缘膜和SOI层，第二区域仅具有支撑层。 沟槽分离元件穿透支撑层，第一绝缘膜和SOI层。 沟槽分离元件分离第一区域和第二区域。 第一电路设置在第一区域的SOI层中。 第二电路设置在第二区域的支撑层中。

公开(公告)号：US20090114974A1

公开(公告)日：2009-05-07

申请号：US12289799

申请日：2008-11-04

Applicant: Takayoshi Naruse ,  Mitsutaka Katada ,  Tetsuo Fujii

Inventor： Takayoshi Naruse ,  Mitsutaka Katada ,  Tetsuo Fujii

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L27/115 ,  G11C5/063 ,  G11C16/04 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/7881

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of memory cells, a plurality of bit lines, and a plurality of source lines. The memory cells are located in the semiconductor substrate. Each of the memory cells includes a trench provided in the semiconductor substrate, an oxide layer disposed on a sidewall of the trench, a tunnel oxide layer disposed at a bottom portion of the trench, a floating gate disposed in the trench so as to be surrounded by the oxide layer and the tunnel oxide layer, and an erasing electrode disposed on an opposing side of the tunnel oxide layer from the floating gate. The bit lines and the source lines are alternately arranged on the memory cells in parallel with each other.

Abstract translation: 半导体器件包括半导体衬底，多个存储单元，多个位线和多个源极线。 存储单元位于半导体衬底中。 每个存储器单元包括设置在半导体衬底中的沟槽，设置在沟槽的侧壁上的氧化物层，设置在沟槽的底部的隧道氧化物层，设置在沟槽中以便被包围的浮置栅极 通过氧化物层和隧道氧化物层，以及擦除电极，设置在隧道氧化物层与浮置栅极相对的一侧。 位线和源极线彼此平行地交替布置在存储器单元上。

公开(公告)号：US07511484B2

公开(公告)日：2009-03-31

申请号：US11649280

申请日：2007-01-04

Applicant: Satoshi Oohira ,  Tetsuo Fujii

Inventor： Satoshi Oohira ,  Tetsuo Fujii

IPC: G01R33/07 ,  G01B7/14 ,  H01L43/06

CPC classification number: G01R33/07 ,  G01R33/075 ,  G01R33/077 ,  H01L43/065

Abstract: A magnetic sensor includes: a substrate; a semiconductor region; a magnetic field detection portion; a pair of first electrodes; and two pairs of second electrodes. One pair of second electrodes includes first and second terminals, and the other pair includes third and fourth terminals. The first and third terminals are disposed on one side, and the second and fourth terminals are disposed on the other side. The first and fourth terminals are electrically coupled, and the second and third terminals are electrically coupled. The magnetic field detection portion and the first and second electrodes provide a vertical Hall element. One of the first and second electrodes supplies a driving current, and the other one detects the Hall voltage.

Abstract translation: 磁传感器包括：基板; 半导体区域 磁场检测部; 一对第一电极; 和两对第二电极。 一对第二电极包括第一和第二端子，另一对第二电极包括第三和第四端子。 第一和第三端子设置在一侧，第二和第四端子设置在另一侧。 第一和第四端子电耦合，并且第二和第三端子电耦合。 磁场检测部分和第一和第二电极提供垂直霍尔元件。 第一和第二电极之一提供驱动电流，另一个检测霍尔电压。

公开(公告)号：US20080230834A1

公开(公告)日：2008-09-25

申请号：US12071411

申请日：2008-02-21

Applicant: Nozomu Akagi ,  Shigeki Takahashi ,  Takashi Nakano ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara

Inventor： Nozomu Akagi ,  Shigeki Takahashi ,  Takashi Nakano ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara

IPC: H01L27/06

CPC classification number: H01L29/7817 ,  H01L27/0738 ,  H01L29/0696 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/435 ,  H01L29/4933 ,  H01L29/7824 ,  H01L29/7835

Abstract: A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.

Abstract translation: 半导体装置包括：半导体衬底; 以及设置在半导体衬底的表面部分上的横向型MIS晶体管。 横向型MIS晶体管包括：与横向型MIS晶体管的栅极耦合的线; 该多晶硅电阻器设置在该线路中，并且具有与横向型MIS晶体管的漏极相反的导电类型; 以及绝缘层，横向型MIS晶体管的漏极电压通过该绝缘层施加到多晶硅电阻器。

公开(公告)号：US20070111480A1

公开(公告)日：2007-05-17

申请号：US11586558

申请日：2006-10-26

Applicant: Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

Inventor： Yumi Maruyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Hirotsugu Funato

IPC: H01L21/00

CPC classification number: H01L21/78 ,  B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/67132

Abstract: A semiconductor wafer has two faces, one of which is a laser light incident face. A dicing sheet is attached to the other face of the wafer, so that it is stretched to thereby apply tensile stress to a laser-reformed region and cause cutting with the reformed region taken as a starting point for cutting. A protection layer, such as light scattering projections and depressions, a light scattering member or a light reflecting member, is provided between the wafer and the dicing sheet to scatter or reflect the laser light passing through the wafer. Thus, the dicing sheet can be protected from being damaged because the laser light converging point is not formed in the dicing sheet.

Abstract translation: 半导体晶片具有两个面，其中之一是激光入射面。 将切割片安装在晶片的另一面上，使其被拉伸，从而对激光重整区域施加拉伸应力，并以重新形成的区域作为切割起点进行切割。 在晶片和切割片之间设置有诸如光散射凸起和凹陷的保护层，光散射部件或光反射部件，以散射或反射穿过晶片的激光。 因此，由于在切割片中没有形成激光聚光点，所以可以防止切割片的损伤。

公开(公告)号：US20070111390A1

公开(公告)日：2007-05-17

申请号：US11598654

申请日：2006-11-14

Applicant: Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

Inventor： Atsushi Komura ,  Tetsuo Fujii ,  Muneo Tamura ,  Makoto Asai

IPC: H01L21/00 ,  H01L23/02

CPC classification number: H01L21/67132 ,  B23K26/009 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

Abstract: A device separated from a wafer includes: a chip having a sidewall, which is provided by a dicing surface of the wafer in a case where the device is separated from the wafer; and a protection member disposed on the sidewall of the chip for protecting the chip from being contaminated by a dust from the dicing surface. In the device, the dicing surface of the wafer is covered with the protection member so that the chip is prevented from contaminated with the dust.

Abstract translation: 与晶片分离的器件包括：具有侧壁的芯片，其在器件与晶片分离的情况下由晶片的切割表面提供; 以及设置在芯片的侧壁上的保护构件，用于保护芯片免受来自切割表面的灰尘的污染。 在该装置中，晶片的切割面被保护部件覆盖，从而防止芯片被灰尘污染。

公开(公告)号：US20050132800A1

公开(公告)日：2005-06-23

申请号：US11062935

申请日：2005-02-22

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: B81B7/00 ,  C07C303/32 ,  C07C303/44 ,  C07C309/17 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01G3/14 ,  G01P15/00 ,  H01S4/00

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US06868727B2

公开(公告)日：2005-03-22

申请号：US10358691

申请日：2003-02-05

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: B81B7/00 ,  C07C303/32 ,  C07C303/44 ,  C07C309/17 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/125

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

公开(公告)号：US20050005697A1

公开(公告)日：2005-01-13

申请号：US10899729

申请日：2004-07-27

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: B81B7/00 ,  C07C303/32 ,  C07C303/44 ,  C07C309/17 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P9/00

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。