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    LOW CONSUMPTION LOGIC CIRCUIT WITH MECHANICAL SWITCHES
    111.
    发明申请
    LOW CONSUMPTION LOGIC CIRCUIT WITH MECHANICAL SWITCHES 有权
    低功耗逻辑电路与机械开关

    公开(公告)号：US20150048864A1

    公开(公告)日：2015-02-19

    申请号：US14452698

    申请日：2014-08-06

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    Inventor： Herve FANET ,  Marc Belleville

    IPC: H03K19/00 ,  B81B7/02

    CPC classification number: H03K19/0019 ,  B81B7/02 ,  B81B2201/01

    Abstract: Adiabatic logic circuit having a first and a second inputs, a first and a second outputs and at least one supply and synchronisation input (Phi), with this circuit comprising: a first logic device comprising at least one first microelectromechanical and/or nanoelectromechanical switch, referred to as first mechanical switch, controlled by a first input and connected to the first output and to the supply and synchronisation input, a second logic device opposite the first logic device comprising at least one second microelectromechanical or nanoelectromechanical switch, referred to as second mechanical switch, controlled by the second input and connected to the second output and to the supply and synchronisation input, first and second devices for partial discharging connected respectively between the first output and the supply and synchronisation input and between the second output and the supply and synchronisation input.

    Abstract translation: 具有第一和第二输入的绝热逻辑电路，第一和第二输出以及至少一个电源和同步输入（Phi），该电路包括：第一逻辑器件，包括至少一个第一微机电和/或纳米机电开关， 被称为第一机械开关，由第一输入端控制并连接到第一输出端和供电和同步输入端;与第一逻辑器件相对的第二逻辑器件，包括至少一个第二微机电或纳米机电开关，称为第二机械 开关，由第二输入端控制并连接到第二输出端和供电和同步输入端，用于部分放电的第一和第二器件分别连接在第一输出与电源同步输入之间以及第二输出与供电和同步之间 输入。

    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES
    113.
    发明申请
    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
    低温陶瓷微电子结构

    公开(公告)号：US20150008788A1

    公开(公告)日：2015-01-08

    申请号：US14185160

    申请日：2014-02-20

    Applicant: The Royal Institution for the Advancement of Learning / McGill University

    Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

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