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    Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures
    6.
    发明授权
    Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures 有权
    微机电系统（MEMS）及相关执行器凸块，制造和设计结构的方法

    公开(公告)号：US09120667B2

    公开(公告)日：2015-09-01

    申请号：US13164331

    申请日：2011-06-20

    申请人： Christopher V. Jahnes ,  Anthony K. Stamper

    发明人： Christopher V. Jahnes ,  Anthony K. Stamper

    IPC分类号： H02N1/00 ,  B81B3/00 ,  H05K13/00

    CPC分类号： H01H59/0009 ,  B81B3/001 ,  B81B7/0006 ,  B81B2201/016 ,  B81B2203/0118 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00293 ,  B81C2203/0145 ,  G06F17/5045 ,  G06F17/5068 ,  H01H1/0036 ,  H01H2001/0057 ,  Y10T29/49121

    摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

    摘要翻译： 提供微机电系统（MEMS）结构，制造方法和设计结构。 形成MEMS结构的方法包括在基板上形成固定的致动器电极和接触点。 该方法还包括在固定的致动器电极和接触点上形成MEMS光束。 该方法还包括形成与固定致动器电极的部分对准的致动器电极阵列，其尺寸和尺寸被设计成防止MEMS光束在重复循环之后塌陷在固定的致动器电极上。 致动器电极阵列形成为与MEMS光束的下侧和固定的致动器电极的表面中的至少一个直接接触。

    Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming thereof and design structures
    8.
    发明授权
    Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming thereof and design structures 有权
    微电子机械结构（MEMS）电容器件，其电容器修整和设计结构

    公开(公告)号：US08739096B2

    公开(公告)日：2014-05-27

    申请号：US13326409

    申请日：2011-12-15

    申请人： Christopher V. Jahnes ,  Anthony K. Stamper

    发明人： Christopher V. Jahnes ,  Anthony K. Stamper

    IPC分类号： G06F17/50 ,  H01L29/02

    CPC分类号： H01G5/18 ,  B81B2201/0221 ,  B81C99/0065 ,  H01G5/38 ,  H03H3/0076

    摘要： Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming for MEMS capacitor devices, and design structures are disclosed. The method includes identifying a process variation related to a formation of micro-electro-mechanical structure (MEMS) capacitor devices across a substrate. The method further includes providing design offsets or process offsets in electrode areas of the MEMS capacitor devices across the substrate, based on the identified process variation.

    摘要翻译： 公开了微电子机械结构（MEMS）电容器件，用于MEMS电容器件的电容器微调和设计结构。 该方法包括识别跨越衬底形成微机电结构（MEMS）电容器器件的过程变化。 该方法还包括基于所识别的过程变化，在跨越衬底的MEMS电容器器件的电极区域中提供设计偏移或过程偏移。

    Photomasks having sub-lithographic features to prevent undesired wafer patterning
    10.
    发明申请
    Photomasks having sub-lithographic features to prevent undesired wafer patterning 审中-公开
    具有亚光刻特征以防止不期望的晶片图案化的光掩模

    公开(公告)号：US20110177435A1

    公开(公告)日：2011-07-21

    申请号：US12690312

    申请日：2010-01-20

    申请人： Russell T. Herrin ,  Edmund J. Sprogis ,  Anthony K. Stamper

    发明人： Russell T. Herrin ,  Edmund J. Sprogis ,  Anthony K. Stamper

    IPC分类号： G03F1/00

    CPC分类号： G03F1/42 ,  G03F1/36 ,  G03F1/38

    摘要： A photomask that is used as a light filter in an exposure system is made of at least one layer of material comprising one or more transparent regions and one or more non-transparent regions. The difference between the transparent regions and the non-transparent regions defines the features that will be illuminated by the exposure system on a photoresist that will be exposed using the exposure system. The features comprise one or more device shapes and at least one sub-lithographic shape that will be exposed upon the photoresist. The sub-lithographic shape has an sub-lithographic shape size that is limited in such a way that the sub-lithographic shape causes a physical change only in a surface of the photoresist. Therefore, because the sub-lithographic shape is so small, it avoids forming an opening through the photoresist after the photoresist is developed and only causes a change on the surface of the photoresist.

    摘要翻译： 在曝光系统中用作滤光器的光掩模由包括一个或多个透明区域和一个或多个不透明区域的至少一层材料制成。 透明区域和不透明区域之间的差异限定了曝光系统将在将使用曝光系统曝光的光刻胶上照亮的特征。 这些特征包括一个或多个器件形状和将被暴露在光刻胶上的至少一个亚光刻形状。 亚光刻形状具有亚光刻形状尺寸，其受到限制，使得亚光刻形状仅在光致抗蚀剂的表面引起物理变化。 因此，由于亚光刻形状如此之小，因此避免了在光致抗蚀剂显影之后通过光致抗蚀剂形成开口，并且仅引起光致抗蚀剂表面的变化。