MULTI-DIE SYSTEM PERFORMANCE OPTIMIZATION
    122.
    发明公开

    公开(公告)号:US20240143056A1

    公开(公告)日:2024-05-02

    申请号:US18218463

    申请日:2023-07-05

    CPC classification number: G06F1/28 G05F1/625

    Abstract: A multi-die semiconductor package includes a first integrated circuit (IC) die having a first intrinsic performance level and a second IC die having a second intrinsic performance level different from the first intrinsic performance level. A power management controller distributes, based on a determined die performance differential between the first IC die and the second IC die, a level of power allocated to the semiconductor chip package between the first IC die and the second IC die. In this manner, the first IC die receives and operates at a first level of power resulting in performance exceeding its intrinsic performance level. The second IC die receives and operates at a second level of power resulting in performance below its intrinsic performance level, thereby reducing performance differentials between the IC dies.

    End user sensitivity profiling for efficiency and performance management

    公开(公告)号:US11972271B2

    公开(公告)日:2024-04-30

    申请号:US17565593

    申请日:2021-12-30

    Inventor: William Herz

    CPC classification number: G06F9/4451 G06F1/3206

    Abstract: A processing device is provided which comprises memory and a processor, in communication with the memory. The processor is configured to acquire information indicating a sensory perception of a user, determine settings for one or more parameters used to control operation of the device based on the information indicating the sensory perception of the user and control the operation of the device by tuning the one or more parameters according to the determined settings.

    Selecting between basic and global persistent flush modes

    公开(公告)号:US11966339B1

    公开(公告)日:2024-04-23

    申请号:US17957205

    申请日:2022-09-30

    CPC classification number: G06F12/0868 G06F12/084 G06F2212/1032

    Abstract: Selecting between basic and global persistent flush modes is described. In accordance with the described techniques, a system includes a data fabric in electronic communication with at least one cache and a controller configured to select between operating in a global persistent flush mode and a basic persistent flush mode based on an available flushing latency of the system, control the at least one cache to flush dirty data to the data fabric in response to a flush event trigger while operating in the global persistent flush mode, and transmit a signal to switch control to an application to flush the dirty data from the at least one cache to the data fabric while operating in the basic persistent flush mode.

    Near-memory determination of registers

    公开(公告)号:US11966328B2

    公开(公告)日:2024-04-23

    申请号:US17126977

    申请日:2020-12-18

    CPC classification number: G06F12/06 G06F2212/1041

    Abstract: A memory module includes register selection logic to select alternate local source and/or destination registers to process PIM commands. The register selection logic uses an address-based register selection approach to select an alternate local source and/or destination register based upon address data specified by a PIM command and a split address maintained by a memory module. The register selection logic may alternatively use a register data-based approach to select an alternate local source and/or destination register based upon data stored in one or more local registers. A PIM-enabled memory module configured with the register selection logic described herein is capable of selecting an alternate local source and/or destination register to process PIM commands at or near the PIM execution unit where the PIM commands are executed.

    BACKSIDE POWER WITH ON-DIE POWER SWITCHES
    127.
    发明公开

    公开(公告)号:US20240128192A1

    公开(公告)日:2024-04-18

    申请号:US18047482

    申请日:2022-10-18

    Abstract: An apparatus and method for efficiently routing power signals across a semiconductor die. In various implementations, an integrated circuit includes a micro through silicon via (TSV) that traverses a silicon substrate layer to a backside metal layer. The integrated circuit also includes power switches. The integrated circuit routes a power supply signal from the output of a power switch to a frontside power rail using the micro TSV and the backside metal layer. The integrated circuit also routes the power supply signal from the output of the power switch to the frontside power rail using a frontside metal layer. Therefore, the frontside metal layer and the backside metal layer provide power connection redundancy that increases charge sharing, improves wafer yield, reduces voltage droop, and reduces on-die area. In addition, the process routes a ground reference voltage level using both a frontside power rail and a backside power rail.

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