公开(公告)号：US20180123540A1

公开(公告)日：2018-05-03

申请号：US15342049

申请日：2016-11-02

Applicant: Akoustis, Inc.

Inventor： Ramakrishna VETURY ,  Alexander Y. FELDMAN ,  Michael D. HODGE ,  Art GEISS ,  Shawn R. GIBB ,  Mark D. BOOMGARDEN ,  Michael P. LEWIS ,  Pinal PATEL ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/17

CPC classification number: H03H3/04 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/0514 ,  H03H9/1035 ,  H03H9/131 ,  H03H9/132 ,  H03H9/133 ,  H03H9/171 ,  H03H9/174 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/0414 ,  H03H2003/0428

Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US20180054176A1

公开(公告)日：2018-02-22

申请号：US15784919

申请日：2017-10-16

Applicant: Akoustis, Inc.

Inventor： Dae Ho KIM ,  Mary WINTERS ,  Ramakrishna VETURY ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337

CPC classification number: H03H3/02 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/053 ,  H01L41/081 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

公开(公告)号：US20180019158A1

公开(公告)日：2018-01-18

申请号：US15717803

申请日：2017-09-27

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY

IPC: H01L21/76 ,  H03H9/02 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC classification number: H01L21/7605 ,  H01L2224/16225 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0523 ,  H03H9/174 ,  H03H2003/023

Abstract: A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

公开(公告)号：US09716581B2

公开(公告)日：2017-07-25

申请号：US14449001

申请日：2014-07-31

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H04L12/26 ,  H04L5/08 ,  H04B1/44

CPC classification number: H04L5/08 ,  H04B1/44 ,  H04L5/14

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

公开(公告)号：US20160065172A1

公开(公告)日：2016-03-03

申请号：US14469503

申请日：2014-08-26

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY

IPC: H03H9/17 ,  H01L41/337 ,  H01L41/331

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H2003/023

Abstract: A substrate structure for an acoustic resonator device. The substrate has a substrate member comprising a plurality of support members configured to form an array structure. In an example, the substrate member has an upper region, and optionally, has a plurality of recessed regions configured by the support members. The substrate has a thickness of single crystal piezo material formed overlying the upper region. In an example, the thickness of single crystal piezo material has a first surface region and a second surface region opposite of the first surface region.

Abstract translation: 一种用于声谐振器装置的衬底结构。 衬底具有包括被配置为形成阵列结构的多个支撑构件的衬底构件。 在一个示例中，衬底构件具有上部区域，并且可选地具有由支撑构件构成的多个凹部区域。 衬底具有形成在上部区域上方的单晶压电材料的厚度。 在一个示例中，单晶压电材料的厚度具有与第一表面区域相对的第一表面区域和第二表面区域。

公开(公告)号：US20160036580A1

公开(公告)日：2016-02-04

申请号：US14449001

申请日：2014-07-31

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY

IPC: H04L5/08 ,  H04B1/44

CPC classification number: H04L5/08 ,  H04B1/44 ,  H04L5/14

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

Abstract translation: 移动通信系统。 该系统具有包括内部区域和外部区域的壳体以及设置在壳体的内部区域内的处理装置。 该系统具有耦合到处理设备并配置在发送路径上的rf发送模块。 该系统具有在rf发送模块内提供的发送滤波器。 在一个示例中，发射滤波器包括包括单晶声谐振器装置的双工器滤波器。

公开(公告)号：US20150357994A1

公开(公告)日：2015-12-10

申请号：US14298057

申请日：2014-06-06

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. SHEALY

IPC: H03H9/25 ,  H01L41/314 ,  H01L41/18

CPC classification number: H01L41/314 ,  H01G4/08 ,  H03H9/02574 ,  H03H9/174 ,  H03H9/175 ,  Y10T29/43

Abstract: A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material.

Abstract translation: 单晶声音电子设备。 该器件具有具有表面区域的衬底。 该器件具有耦合到衬底的一部分的第一电极材料和具有大于0.4微米的厚度的单晶电容器电介质材料，并且覆盖在表面区域的暴露部分并且耦合到第一电极材料。 在一个示例中，单晶电容器介电材料的特征在于位错密度小于1012缺陷/ cm2。 第二电极材料覆盖单晶电容器介电材料。

公开(公告)号：US12289087B2

公开(公告)日：2025-04-29

申请号：US18157881

申请日：2023-01-23

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC: H03H9/13 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/54 ,  H10N30/00 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/87 ,  H10N30/88 ,  H10N30/072

Abstract: An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

公开(公告)号：US12231108B2

公开(公告)日：2025-02-18

申请号：US18340764

申请日：2023-06-23

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/17

Abstract: An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators. Each resonator having a reflector, a support member including a surface, a first electrode including tungsten, overlying the reflector, a piezoelectric film including crystalline aluminum scandium nitride overlapping the first electrode, a second electrode including tungsten overlapping the piezoelectric film and the first electrode, and a passivation layer including silicon nitride overlying the second electrode. Portions of the support member surface of at least one resonator define a cavity region having a portion of the first electrode of the at least one resonator is located within the cavity region. The pass band circuit response has a bandwidth corresponding to a thickness of at least one of the first electrode, piezoelectric film, second electrode, and passivation layer. The system can include single crystal or polycrystalline BAW resonators.

公开(公告)号：US12102010B2

公开(公告)日：2024-09-24

申请号：US17193623

申请日：2021-03-05

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich

IPC: H03H3/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778 ,  H03H9/02 ,  H03H9/17 ,  H10N30/00 ,  H10N30/03 ,  H10N30/076 ,  H10N30/093 ,  H10N39/00

CPC classification number: H10N39/00 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/173 ,  H03H9/176 ,  H10N30/03 ,  H10N30/076 ,  H10N30/093 ,  H10N30/708 ,  H03H2003/021

Abstract: A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising Al to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScAlN on the substrate.