公开(公告)号：US20090294414A1

公开(公告)日：2009-12-03

申请号：US12129091

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Mathew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Mathew L. Miller ,  Kenneth S. Collins

IPC: B23K10/00

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32935

Abstract: A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.

Abstract translation: 一种在等离子体反应室中处理工件的方法，其中根据对应于期望的过程瞬态循环的时变调制控制信号调制多个施加的RF等离子体功率中的第一个。 该方法通过响应于时变调制控制信号调制多个等离子体功率中的第二个来实现反射功率的降低。

公开(公告)号：US07552736B2

公开(公告)日：2009-06-30

申请号：US11685775

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US20090162996A1

公开(公告)日：2009-06-25

申请号：US11963034

申请日：2007-12-21

Applicant: Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC: H01L21/263

CPC classification number: H01L21/2254 ,  H01L21/2253

Abstract: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

Abstract translation: 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

公开(公告)号：US20090142247A1

公开(公告)日：2009-06-04

申请号：US11999083

申请日：2007-12-03

Applicant: Jennifer Y. Sun ,  Irene A. Chou ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves

Inventor： Jennifer Y. Sun ,  Irene A. Chou ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves

IPC: H01L21/302 ,  C01B31/36

CPC classification number: C23C16/4404 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C04B35/565

Abstract: Method of removing damaged silicon carbide crystalline structure from the surface of a silicon carbide component. The method comprises at least two liquid chemical treatment processes, where one treatment converts silicon carbide to silicon oxide, and another treatment removes silicon oxide. The liquid chemical treatments are typically carried out at a temperature below about 100° C. The time period required to carry out the method is generally less than about 100 hours.

Abstract translation: 从碳化硅组件的表面去除损坏的碳化硅晶体结构的方法。 该方法包括至少两种液体化学处理方法，其中一种处理将碳化硅转化为氧化硅，另一种处理将氧化硅除去。 液体化学处理通常在低于约100℃的温度下进行。进行该方法所需的时间通常小于约100小时。

公开(公告)号：US20090025879A1

公开(公告)日：2009-01-29

申请号：US11828713

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/20 ,  H01J37/16 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.

Abstract translation: RF接地回流电流通过提供旁路电流流动路径而被转移离开反应室的非对称特征。 旁路电流流动路径避免了室底部中的泵送口，避免了晶片狭缝阀，并且由接合到晶片基座并从晶片基座延伸的导电环形挡板提供。 可以通过在侧壁中提供一个或多个绝缘环或通过提供电介质侧壁来阻止低于环形挡板水平面的电流。

公开(公告)号：US07479456B2

公开(公告)日：2009-01-20

申请号：US10929104

申请日：2004-08-26

Applicant: Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth S. Collins ,  Amir Al-Bayati

Inventor： Douglas A. Buchberger, Jr. ,  Daniel J. Hoffman ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Hiorji Hanawa ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/67109 ,  H01L21/6831

Abstract: A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

Abstract translation: 在等离子体反应器中从晶片去除热量的同时静电夹持晶片的方法包括在圆盘上提供抛光的大致连续的表面，将晶片放置在圆盘的抛光表面上并冷却圆盘。 将夹持电压施加到圆盘内的电极，以足够的力将晶片静电拉到圆盘的表面上，以获得在圆盘和晶片的接触表面之间选择的传热系数。

公开(公告)号：US20080260966A1

公开(公告)日：2008-10-23

申请号：US11738507

申请日：2007-04-22

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

IPC: H05H1/24

CPC classification number: H01J37/3266 ,  H01J37/32623

Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.

Abstract translation: 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，控制处理室中的等离子体的方法包括提供用于处理衬底并具有其中限定的处理体积的室，其中在操作期间将形成等离子体，所述室还具有等离子体控制磁体组件，其包括 提供具有幅度的磁场的多个磁体在处理体积的上部区域中大于约10个高斯，并且在处理体积的接近待处理衬底的较低区域中小于约10个高斯; 向所述室供应处理气体; 以及从所述处理气体在所述处理容积中形成等离子体。

公开(公告)号：US20080213496A1

公开(公告)日：2008-09-04

申请号：US11890221

申请日：2007-08-02

Applicant: Jennifer Y. Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda Kumar ,  Robert W. Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C. Stow ,  Jim Dempster ,  Li Xu ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

Inventor： Jennifer Y. Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda Kumar ,  Robert W. Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C. Stow ,  Jim Dempster ,  Li Xu ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

IPC: C23C4/10 ,  C23C14/34

CPC classification number: C23C28/042 ,  C23C4/11 ,  C23C4/18 ,  C23C16/4404

Abstract: Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.

Abstract translation: 将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。 特种陶瓷材料含有至少一种含氧化钇的固溶体。 已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

公开(公告)号：US20080180028A1

公开(公告)日：2008-07-31

申请号：US11733770

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01J7/00

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

Abstract translation: 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US20080179290A1

公开(公告)日：2008-07-31

申请号：US11685915

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C23F1/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.

Abstract translation: 工件被支撑在真空室的背面，同时留下工件的后侧的周边环形部分露出。 该过程首先在低于约200℃的温度下开始增加工件的温度。工件的边缘被限制以便在边缘处建立约1％直径的间隙， 间隙对应于包含前侧的上处理区域和包含背面的下处理区域之间的边界。 在工件温度超过约200℃之前，使用在较低工艺区域中的含有聚合物蚀刻物质的第一等离子体来去除背面聚合物。 在工件温度达到约300摄氏度之后，使用在上工艺区域中含有光刻带材料的第二等离子体的副产品从工件正面剥离光致抗蚀剂。