公开(公告)号：US20170287743A1

公开(公告)日：2017-10-05

申请号：US15474107

申请日：2017-03-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo KOBAYASHI ,  Konosuke SASAHIRA ,  Katsuhiro YAMAZAKI

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/02 ,  H01L21/687 ,  B08B3/04 ,  B08B3/08

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/6719

Abstract: According to the embodiment, a substrate treating device 1 that rotates and washes a substrate, the device includes a spinning holding mechanism for holding a substrate, a treatment liquid supply nozzle for supplying a treatment liquid to the substrate, a shielding plate that is arranged opposite to the substrate held by the spinning holding mechanism and that moves in a contact/separate direction with respect to the substrate, a shielding plate rotating mechanism for rotating the shielding plate, and a control device for controlling the shielding plate rotating mechanism to rotate the shielding plate without moving the shielding plate from a standby position when the treatment liquid is supplied from the treatment liquid supply nozzle. It is possible to prevent contamination of a substrate during the treatment process.

公开(公告)号：US09513557B2

公开(公告)日：2016-12-06

申请号：US14635183

申请日：2015-03-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F7/20 ,  G03F1/24

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

公开(公告)号：US09507251B2

公开(公告)日：2016-11-29

申请号：US14197549

申请日：2014-03-05

Applicant: Shibaura Mechatronics Corporation ,  Kabushiki Kaisha Toshiba

Inventor： Tomoaki Yoshimori ,  Makoto Karyu ,  Takeharu Motokawa ,  Kosuke Takai ,  Yoshihisa Kase

IPC: G03F1/24 ,  G03B27/42 ,  G03F1/54 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03B27/42 ,  G03F1/54 ,  G03F1/80

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract translation: 根据一个实施例，公开了一种用于制造反射掩模的方法。 该方法可以包括在基底的主表面上形成反射层。 该方法可以包括在反射层上形成吸收层。 该方法可以包括在吸收层中形成图案区域。 此外，该方法可以包括在吸收层和反射层中形成围绕图案区域的遮光区域。 形成遮光区域包括使用含有氯和氧的气体对反射层进行蚀刻处理。

公开(公告)号：US20160225613A1

公开(公告)日：2016-08-04

申请号：US15021182

申请日：2014-09-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takahiro Kanai ,  Emi Matsui ,  Konosuke Hayashi

IPC: H01L21/02

Abstract: The embodiment of a substrate treatment device includes a treatment bath configured to store a treatment liquid in which a treatment object is to be immersed, a transport section configured to transport the treatment object, a temperature control section provided in at least one of the treatment bath and a position spaced from the treatment bath and configured to perform at least one of heating and cooling of the treatment object. the treatment object is at least one of: a laminated substrate including a device substrate, a support substrate, and an adhesive provided between the device substrate and the support substrate, the device substrate with the adhesive attached thereto, and the support substrate with the adhesive attached thereto.

Abstract translation: 基板处理装置的实施方式包括：处理槽，其配置为储存待处理对象物被浸渍的处理液，配置成输送处理对象物的输送部，设置在至少一个处理槽中的温度控制部 以及与治疗浴间隔开并且被配置为执行治疗对象的加热和冷却中的至少一个的位置。 处理对象是以下中的至少一种：包括装置基板，支撑基板和设置在装置基板和支撑基板之间的粘合剂的层压基板，附着有粘合剂的装置基板和具有粘合剂的支撑基板 附在其上。

公开(公告)号：US20150177624A1

公开(公告)日：2015-06-25

申请号：US14635183

申请日：2015-03-02

Applicant: Shibaura Mechatronics Corporation

Inventor： Katsuhiro Yamazaki ,  Kensuke Demura

IPC: G03F7/20

CPC classification number: G03F7/70033 ,  G03F1/24

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract translation: 根据一个实施例，一种用于制造反射掩模的方法包括：在基板的主表面上形成反射层; 在反射层上形成含有钌的覆盖层; 在覆盖层上形成吸收层; 在吸收层中形成图案区域; 去除用于形成图案区域的第一抗蚀剂掩模; 以及在吸收层，封盖层和反射层中形成围绕图案区域的遮光区域。 去除形成图案区域中使用的第一抗蚀剂掩模包括：使用氨气和氮气的混合气体或仅仅氨气进行干灰化处理。

公开(公告)号：US20150090297A1

公开(公告)日：2015-04-02

申请号：US14495314

申请日：2014-09-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Jun MATSUSHITA ,  Yuji NAGASHIMA ,  Konosuke HAYASHI ,  Kunihiro MIYAZAKI

IPC: B08B3/08 ,  B08B3/02 ,  H01L21/67

CPC classification number: B08B3/08 ,  B08B3/02 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Abstract translation: 基板处理装置10具有除水单元110，当溶剂供给单元58向基板W的表面供给挥发性溶剂时，除水单元110向基板W的表面供给除水剂，以促进 用挥发性溶剂代替基材W表面上的清洗水。

公开(公告)号：US20150059642A1

公开(公告)日：2015-03-05

申请号：US14472923

申请日：2014-08-29

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA

IPC: B05B3/08 ,  B05B15/04

CPC classification number: H01L21/67028 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/68785

Abstract: A spin treatment apparatus according to an embodiment includes: an annular liquid receiver surrounding a rotating substrate at a distance from an outer periphery of the substrate and configured to receive liquid flying from the rotating substrate and accommodate the liquid; an annular cup body surrounding the liquid receiver at a distance from an outer periphery of the liquid receiver and forming an annular outer exhaust flow channel for generating an airflow along an upper surface to an outer peripheral surface of the liquid receiver; and an annular partitioning member provided inside the annular liquid receiver and forming an annular inner exhaust flow channel for generating an airflow along an inner peripheral surface to a lower surface of the liquid receiver.

Abstract translation: 根据实施例的旋转处理装置包括：围绕旋转基板的环形液体接收器，与基板的外周距离一定距离，并且构造成接收从旋转基板飞出并容纳液体的液体; 围绕所述液体接收器的环形杯体，所述环形杯体与所述液体接收器的外周距离一定距离，并且形成用于沿着所述液体接收器的外表面的上表面产生气流的环形外排气流动通道; 以及环形分隔构件，其设置在所述环形液体接收器内部并形成环形内部排气流动通道，用于沿着所述液体接收器的内周表面到下表面产生气流。

公开(公告)号：US20140186754A1

公开(公告)日：2014-07-03

申请号：US14197549

申请日：2014-03-05

Applicant: Kabushiki Kaisha Toshiba ,  Shibaura Mechatronics Corporation

Inventor： Tomoaki Yoshimori ,  Makoto Karyu ,  Takeharu Motokawa ,  Kosuke Takai ,  Yoshihisa Kase

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03B27/42 ,  G03F1/54 ,  G03F1/80

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract translation: 根据一个实施例，公开了一种用于制造反射掩模的方法。 该方法可以包括在基底的主表面上形成反射层。 该方法可以包括在反射层上形成吸收层。 该方法可以包括在吸收层中形成图案区域。 此外，该方法可以包括在吸收层和反射层中形成围绕图案区域的遮光区域。 形成遮光区域包括使用含有氯和氧的气体对反射层进行蚀刻处理。

公开(公告)号：US20130256270A1

公开(公告)日：2013-10-03

申请号：US13847130

申请日：2013-03-19

Applicant: SHIBAURA MECHATRONICS CORPORATION ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Takeharu MOTOKAWA ,  Tokuhisa OOIWA ,  Kensuke DEMURA ,  Tomoaki YOSHIMORI ,  Makoto KARYU ,  Yoshihisa KASE ,  Hidehito AZUMANO

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

Abstract translation: 根据一个实施例，等离子体处理装置包括：处理室; 减压部，其构造成在所述处理室内减压; 包括插入到设置在工件的安装侧的凹部中的控制部的构件，所述控制部被构造成能够控制包括所述工件的区域的电容的面内分布和面内分布中的至少一个 工件温度; 设置在处理室内部的安装部; 等离子体产生部，被配置为向用于产生用于对所述工件进行等离子体处理的等离子体的区域提供电磁能; 以及气体供给部，其构造成将处理气体供给到用于产生等离子体的区域。 控制部进行控制，使得电容的平面内分布和温度的面内分布中的至少一个均匀。

公开(公告)号：US20040217100A1

公开(公告)日：2004-11-04

申请号：US10479960

申请日：2004-06-16

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shinichi Ogimoto ,  Koji Morita

IPC: H05B003/02 ,  B23K011/10

CPC classification number: B23K20/023 ,  B23K2101/40 ,  B23K2101/42

Abstract: An elongation amount of electronic parts to be bonded onto a substrate by thermocompression is accurately controlled, and thereby poor connection of the electronic parts is prevented. An electronic part compression bonding apparatus according to the present invention includes a compression bonding unit (41) which bonds the electronic parts onto the substrate by thermocompression, a pressure supply unit (48), a pressure control unit (83) which controls pressure, a heating unit (43) which heats the compression bonding unit (41), a temperature control unit (85), and a thermocompression bonding control unit (80) which controls the pressure control unit (83) and the heating unit (43) based on thermocompression bonding condition data in which at least one of pressure and heating temperature is variably set during a process from start until completion of a thermocompression bonding operation of the electronic parts. In the thermocompression bonding condition data, the pressure is set to be first pressure in a first stage in a process of the thermocompression bonding operation and second pressure, which is lower than the first pressure, in a second stage that follows the first stag

Abstract translation: 精确地控制通过热压接在基板上的电子部件的伸长量，从而防止电子部件的连接不良。 根据本发明的电子部件压接装置包括通过热压将电子部件接合到基板上的压接单元（41），压力供给单元（48），控制压力的压力控制单元（83）， 加热压缩单元（41）的加热单元（43），温度控制单元（85）和基于以下步骤控制压力控制单元（83）和加热单元（43）的热压接控制单元（80） 在从电子部件的热压接操作的开始到完成的处理期间可变地设定压力和加热温度中的至少一个的热压接合条件数据。 在热压接条件数据中，在第一阶段中的第二阶段中，在热压接操作和低于第一压力的第二压力的过程中的第一阶段将压力设定为第一压力