公开(公告)号：US06944080B2

公开(公告)日：2005-09-13

申请号：US10938794

申请日：2004-09-13

申请人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

发明人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

IPC分类号： G11C11/401 ,  G11C5/02 ,  G11C5/06 ,  G11C7/02 ,  G11C7/18 ,  G11C8/00 ,  G11C11/34 ,  G11C11/4097 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

CPC分类号： G11C7/02 ,  G11C5/025 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4074 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/0214 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10897

摘要： A dynamic RAM comprising a plurality of word lines respectively connected to address select terminals of a plurality of dynamic memory cells, a plurality of complementary bit line pairs respectively connected to input/output terminals of the plurality of dynamic memory cells and placed in directions opposite to one another, and a sense amplifier array which is supplied with an operating voltage according to an operation timing signal and comprises a plurality of latch circuits for respectively amplifying the differences in voltage between the complementary bit line pairs. In the dynamic RAM, common electrodes provided in opposing relationship to storage nodes corresponding to connecting points between address select MOSFETs and information storage capacitors of the plurality of dynamic memory cells, on both sides with the sense amplifier array as the center are connected to one another while circuit connections in the sense amplifier array are being ensured by wiring using the common electrodes.

摘要翻译： 一种动态RAM，包括分别连接到多个动态存储单元的地址选择端的多个字线，分别连接到所述多个动态存储单元的输入/输出端的多个互补位线对，并且被放置在与 以及根据操作定时信号提供工作电压的读出放大器阵列，并且包括用于分别放大互补位线对之间的电压差的多个锁存电路。 在动态RAM中，与以感测放大器阵列为中心的两侧的多个动态存储单元的地址选择MOSFET和信息存储电容器之间的连接点对应的存储节点提供的公共电极彼此连接 而通过使用公共电极的布线来确保读出放大器阵列中的电路连接。

公开(公告)号：US06922568B1

公开(公告)日：2005-07-26

申请号：US09606358

申请日：2000-06-29

申请人： Yoshitaka Nakamura

发明人： Yoshitaka Nakamura

IPC分类号： H04M1/725 ,  H04M11/00 ,  H04N1/00 ,  H04W88/02

CPC分类号： H04W88/02 ,  H04M1/725 ,  H04N1/00106

摘要： In a communication system which has a base station, a mobile station and an object device controllable by the mobile station, the mobile station monitors status of the object device to detect whether or not the object device is ready to receive a data signal sequence sent through the mobile station. Such a data signal sequence may be either a voice data signal or an image data signal. The mobile station can transmit, towards the base station, a response determined by the status of the object device. A reception state of the object device may be switched from one to another to selectively receive the voice and the image data signals.

摘要翻译： 在具有由移动站可控的基站，移动站和对象设备的通信系统中，移动站监视对象设备的状态，以检测对象设备是否已准备好接收通过该对象设备发送的数据信号序列 移动台。 这样的数据信号序列可以是语音数据信号或图像数据信号。 移动台可以向基站发送由对象设备的状态确定的响应。 可以将对象设备的接收状态从一个切换到另一个，以选择性地接收语音和图像数据信号。

公开(公告)号：US20050040452A1

公开(公告)日：2005-02-24

申请号：US10959634

申请日：2004-10-07

申请人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

发明人： Yoshitaka Nakamura ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hidekazu Goto ,  Isamu Asano ,  Hideo Aoki ,  Keizo Kawakita ,  Satoru Yamada ,  Katsuhiko Tanaka ,  Hiroshi Sakuma ,  Masayoshi Hirasawa

IPC分类号： H01L21/8242 ,  H01L23/522 ,  H01L29/76

CPC分类号： H01L27/10852 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

公开(公告)号：US20050035682A1

公开(公告)日：2005-02-17

申请号：US10790762

申请日：2004-03-03

申请人： Osamu Tsuboi ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

发明人： Osamu Tsuboi ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC分类号： G02B26/08 ,  B81B3/00 ,  G02B26/10 ,  H02N1/00 ,  A45D24/30

CPC分类号： H02N1/008

摘要： A micro-oscillation element includes a movable main section, a first frame and a second frame, and a first connecting section that connects the movable main section and the first frame and defines a first axis of rotation for a first rotational operation of the movable main section with respect to the first frame. The element further includes a second connecting section that connects the first frame and the second frame and defines a second axis of rotation for a second rotational operation of the first frame and the movable main section with respect to the second frame. A first drive mechanism is provided for generating a driving force for the first rotational operation. A second drive mechanism is provided for generating a driving force for the second rotational operation. The first axis of rotation and the second axis of rotation are not orthogonal.

摘要翻译： 微振荡元件包括可移动主体部分，第一框架和第二框架，以及第一连接部分，其连接可移动主体部分和第一框架，并且限定第一旋转轴线用于可移动主体的第一旋转操作 相对于第一帧的截面。 元件还包括第二连接部分，其连接第一框架和第二框架并且限定第二旋转轴线用于第一框架和可移动主体部分相对于第二框架的第二旋转操作。 第一驱动机构被提供用于产生用于第一旋转操作的驱动力。 提供第二驱动机构用于产生用于第二旋转操作的驱动力。 第一旋转轴线和第二旋转轴线不正交。

公开(公告)号：US06807120B2

公开(公告)日：2004-10-19

申请号：US10309180

申请日：2002-12-04

申请人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

发明人： Tomonori Sekiguchi ,  Kazuhiko Kajigaya ,  Katsutaka Kimura ,  Riichiro Takemura ,  Tsugio Takahashi ,  Yoshitaka Nakamura

IPC分类号： G11C702

CPC分类号： G11C7/02 ,  G11C5/025 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4074 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/0214 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10897

摘要： A semiconductor device includes a first region having first bit lines, first word lines and first memory cells; a second region having second bit lines, second word lines and second memory cells; a third region having sense amplifiers placed between the first region and the second region; a first conductive layer being over the first region; a second conductive layer being over the second region; and a connecting layer, being over the third region, which electrically connects the first conductive layer with the second conductive layer. The sense amplifiers amplify differences in voltage between the first bit lines and the second bit lines. Each of the first memory cells includes a first storage capacitor having an electrode connected to the first conductive layer. Each of the second memory cells includes a second storage capacitor having an electrode connected to the second conductive layer.

摘要翻译： 半导体器件包括具有第一位线，第一字线和第一存储器单元的第一区域; 具有第二位线的第二区域，第二字线和第二存储器单元; 具有放置在所述第一区域和所述第二区域之间的读出放大器的第三区域; 在所述第一区域之上的第一导电层; 在所述第二区域上方的第二导电层; 以及连接层，其在第三区域之上，其将第一导电层与第二导电层电连接。 感测放大器放大第一位线和第二位线之间的电压差。 每个第一存储单元包括具有连接到第一导电层的电极的第一存储电容器。 每个第二存储单元包括具有连接到第二导电层的电极的第二存储电容器。

公开(公告)号：US06806992B2

公开(公告)日：2004-10-19

申请号：US10331500

申请日：2002-12-31

申请人： Hiromitsu Soneda ,  Satoshi Ueda ,  Hisao Okuda ,  Ippei Sawaki ,  Osamu Tsuboi ,  Yoshihiro Mizuno ,  Norinao Kouma ,  Yoshitaka Nakamura ,  Fumio Yamagishi

发明人： Hiromitsu Soneda ,  Satoshi Ueda ,  Hisao Okuda ,  Ippei Sawaki ,  Osamu Tsuboi ,  Yoshihiro Mizuno ,  Norinao Kouma ,  Yoshitaka Nakamura ,  Fumio Yamagishi

IPC分类号： G02B2600

CPC分类号： G02B6/3518 ,  G02B6/3556 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/4232 ,  G02B26/0841 ,  Y10S359/904

摘要： A micro mirror unit includes a micro mirror substrate, a wiring substrate and an electroconductive spacer disposed between these substrates. The micro mirror substrate includes a moving part, a frame and torsion bars connecting the moving part to the frame. The moving part is provided with a mirror-formed portion. The wiring substrate is formed with a wiring pattern. The electroconductive spacer electrically connects the frame to the wiring pattern, while also providing a space between the micro mirror substrate and the wiring substrate.

摘要翻译： 微镜单元包括微镜基板，布线基板和布置在这些基板之间的导电间隔件。 微镜基板包括移动部件，框架和将移动部件连接到框架的扭杆。 移动部分设置有镜形部分。 布线基板形成有布线图案。 导电间隔物将框架电连接到布线图案，同时还在微反射镜基板和布线基板之间提供空间。

公开(公告)号：US06734060B2

公开(公告)日：2004-05-11

申请号：US09208879

申请日：1998-12-10

申请人： Yoshitaka Nakamura ,  Isamu Asano ,  Keizou Kawakita ,  Satoru Yamada

发明人： Yoshitaka Nakamura ,  Isamu Asano ,  Keizou Kawakita ,  Satoru Yamada

IPC分类号： H01L218242

CPC分类号： H01L27/10894 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L27/10814 ,  H01L27/10882 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a peripheral circuit region of a DRAM, two connection holes 17a, 17b for connecting a first layer line 14 and a second layer line 26 electrically are opened separately in two processes. After forming the connection holes 17a and 17b, plugs 18a and 215a are formed in the connection holes 17a and 17b, respectively.

摘要翻译： 在DRAM的外围电路区域中，用于连接第一层布线14和第二层布线26的两个连接孔17a，17b在两个工序中单独打开。 在形成连接孔17a和17b之后，分别在连接孔17a和17b中形成插头18a和215a。

公开(公告)号：US06700152B2

公开(公告)日：2004-03-02

申请号：US10231053

申请日：2002-08-30

申请人： Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

发明人： Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

IPC分类号： H01L27108

CPC分类号： H01L27/10808 ,  H01L27/108

摘要： The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.

摘要翻译： 存储单元的新结构能够在不增加处理次数的情况下避免步骤的问题，制造过程中同一基板的公共部分增加的半导体集成电路的结构和半导体的结构 公开了不增加处理次数的环境障碍措施的集成电路。 采用通过将电容器的存储节点经由插头和焊盘连接到扩散层，在多个金属布线层的最上层形成电容器的存储单元结构。 最好将形成在最上层的金属布线层中的电介质膜和由存储节点和平板电极构成的辅助电容器连接到电容器。 还希望电容器的平板电极覆盖芯片。

公开(公告)号：US06607988B2

公开(公告)日：2003-08-19

申请号：US09749554

申请日：2000-12-28

申请人： Takashi Yunogami ,  Yoshitaka Nakamura ,  Kazuo Nojiri ,  Sukeyoshi Tsunekawa ,  Toshiyuki Arai ,  Miwako Nakahara ,  Shigeru Ohno ,  Tomonori Saeki ,  Masaru Izawa

发明人： Takashi Yunogami ,  Yoshitaka Nakamura ,  Kazuo Nojiri ,  Sukeyoshi Tsunekawa ,  Toshiyuki Arai ,  Miwako Nakahara ,  Shigeru Ohno ,  Tomonori Saeki ,  Masaru Izawa

IPC分类号： H01L21302

CPC分类号： H01L28/65 ,  C23F4/00 ,  H01L21/32136 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/91

摘要： With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

摘要翻译： 为了提供使用光致抗蚀剂作为蚀刻掩模对Ru（钌）进行高选择性蚀刻的技术，覆盖沉积在孔的侧壁和底表面上的下电极材料的Ru膜被覆盖 与光致抗蚀剂膜接触，然后在含有臭氧气体的气体气氛中进行各向同性的干法蚀刻，由此除去孔外部的Ru膜的一部分。

公开(公告)号：US06576104B1

公开(公告)日：2003-06-10

申请号：US08212818

申请日：1994-03-15

申请人： Hisanori Nasu ,  Yoshitaka Nakamura ,  Hitoshi Fujimiya ,  Kenji Yamamoto

发明人： Hisanori Nasu ,  Yoshitaka Nakamura ,  Hitoshi Fujimiya ,  Kenji Yamamoto

IPC分类号： G01N2726

CPC分类号： G01N27/44721

摘要： An apparatus and a method for reading a gel electrophoresis pattern can read the gel electrophoresis pattern of a sample, such as a nucleic acid and a protein, with high sensitivity and without requiring the use of an expensive device structure such as a laser light source of unique type. The gel electrophoresis apparatus is structured by a sample supplying section for supplying a sample labeled with a fluorescent substance from an inlet side of an electrophoresis gel unit; an electrophoresis unit for subjecting the sample to electrophoresis by applying an electrophoresis voltage to the electrophoresis gel unit; a carrying section for withdrawing the electrophoresed sample continually from an outlet side of the electrophoresis gel unit into a carrying fluid and carrying the fluid a predetermined distance; a mixing unit for mixing the carrying fluid with a luminous liquid; and a light receiving section for receiving fluorescence emitted from the sample in the luminous liquid at a position to which the carrying fluid has been carried the predetermined distance.

摘要翻译： 读取凝胶电泳图案的装置和方法可以高灵敏度地读取样品（例如核酸和蛋白质）的凝胶电泳图案，并且不需要使用昂贵的器件结构，例如激光光源 独特的类型。 凝胶电泳装置由用于从电泳凝胶单元的入口侧供给标记有荧光物质的样品的样品供给部构成， 电泳单元，其通过向电泳凝胶单元施加电泳电压使样品进行电泳; 用于将电泳样品从电泳凝胶单元的出口侧连续地抽出到携带流体中并将流体携带预定距离的承载部分; 用于将运载流体与发光液体混合的混合单元; 以及受光部，用于在所述承载流体已经承载了所述预定距离的位置处接收从所述发光液体中的所述样品发射的荧光。