公开(公告)号：US06339257B1

公开(公告)日：2002-01-15

申请号：US09352338

申请日：1999-07-13

Applicant: Noriaki Fujiki ,  Takashi Yamashita ,  Shigeru Harada ,  Kazunobu Miki

Inventor： Noriaki Fujiki ,  Takashi Yamashita ,  Shigeru Harada ,  Kazunobu Miki

IPC: H01L2348

CPC classification number: H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

Abstract: A semiconductor device which is provided with enhanced reliability and capable of preventing cracking of a layer below an interconnection layer and separation of the interconnection layer and a bonding pad electrode layer. The semiconductor device includes: an interconnection layer including a conductive material formed on a silicon substrate; an intermediate layer formed in contact with interconnection layer and including a titanium layer and a titanium nitride layer; and a bonding pad electrode layer which is in contact with the intermediate layer.

Abstract translation: 一种半导体器件，其具有增强的可靠性并且能够防止互连层下面的层的破裂以及互连层和焊盘电极层的分离。 半导体器件包括：包括形成在硅衬底上的导电材料的互连层; 形成为与互连层接触且包括钛层和氮化钛层的中间层; 以及与中间层接触的接合焊盘电极层。

公开(公告)号：US06313637B1

公开(公告)日：2001-11-06

申请号：US09195555

申请日：1998-11-19

Applicant: Junichi Iino ,  Masaya Itou ,  Hidetoshi Kato ,  Takashi Yamashita ,  Tetsuya Kobayashi

Inventor： Junichi Iino ,  Masaya Itou ,  Hidetoshi Kato ,  Takashi Yamashita ,  Tetsuya Kobayashi

IPC: G01N27416

CPC classification number: H02J7/0021 ,  B60L11/1851 ,  G01R19/16542 ,  G01R31/3648 ,  G01R31/3658 ,  Y02T10/7005 ,  Y02T10/705

Abstract: A set battery which generates a high voltage comprises a number of battery modules connected to each other in series. A module voltage of each of the battery modules is detected by a corresponding differential voltage detecting circuit and is transmitted to an A/D convertor. Each of Several voltage detecting blocks is constituted by a plurality of the differential voltage detecting circuits for detecting module voltages of a plurality of the battery modules contiguous to each other. Each of the differential voltage detecting circuits belonging to the same voltage detecting block is applied with a common reference potential which is used to detect the module voltage. The reference potential is set to values which differ from each other for the respective voltage detecting blocks.

Abstract translation: 产生高电压的集电池包括串联连接的多个电池组件。 每个电池模块的模块电压由对应的差分电压检测电路检测，并传输到A / D转换器。 多个电压检测块中的每一个由用于检测彼此相邻的多个电池模块的模块电压的多个差分电压检测电路构成。 属于相同电压检测块的每个差分电压检测电路都被施加有用于检测模块电压的公共参考电位。 参考电位被设定为各个电压检测块彼此不同的值。

公开(公告)号：US06283835B1

公开(公告)日：2001-09-04

申请号：US09727539

申请日：2000-12-04

Applicant: Shigeru Harada ,  Takashi Yamashita ,  Noriaki Fujiki ,  Tsutomu Tanaka

Inventor： Shigeru Harada ,  Takashi Yamashita ,  Noriaki Fujiki ,  Tsutomu Tanaka

IPC: B24B100

CPC classification number: H01L21/768 ,  H01L21/02063 ,  H01L23/53223 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S438/906 ,  Y10S438/963 ,  H01L2924/00

Abstract: A method and an apparatus for manufacturing a semiconductor integrated circuit in which semiconductor elements (2) and a wiring structure connecting the semiconductor elements (2) one another are located on a semiconductor substrate (1). In the method or apparatus, a series of wiring elements (4,6,7,9,10), each of which constructs the wiring structure is formed sequentially, then the semiconductor integrated circuit under manufacturing process is washed by neutral solution containing oxidant during the process of forming of the wiring elements (4,6,7,9,10).

Abstract translation: 一种半导体集成电路的制造方法和装置，其中半导体元件（2）和连接半导体元件（2）的布线结构位于半导体衬底（1）上。 在该方法或装置中，依次形成构成布线结构的一系列布线元件（4,6,7,9,10），然后在制造工艺下的半导体集成电路用含有氧化剂的中性溶液洗涤 布线元件（4,6,7,9,10）的形成工序。

公开(公告)号：US6126523A

公开(公告)日：2000-10-03

申请号：US297820

申请日：1999-08-09

Applicant: Sei Moriyasu ,  Hitoshi Ohmori ,  Takeo Nakagawa ,  Kazuyuki Horie ,  Shinjirou Machida ,  Takashi Yamashita

Inventor： Sei Moriyasu ,  Hitoshi Ohmori ,  Takeo Nakagawa ,  Kazuyuki Horie ,  Shinjirou Machida ,  Takashi Yamashita

IPC: B24B53/00 ,  B24B53/013 ,  B24B53/095 ,  B24D3/28 ,  B24D3/34 ,  B24B1/00

CPC classification number: B24B53/013 ,  B24B53/00 ,  B24B53/095 ,  B24D3/28 ,  B24D3/34 ,  B24D3/346

Abstract: A photo-reactive grinding wheel 1 is irradiated with light by a light irradiation device 2 which is provided opposite to the grinding wheel, to bring about a chemical reaction and change in property, and dissolved/removed by a solution 4. Simultaneously, a workpiece 5 is processed by the photo-reactive grinding wheel 1. Thus, processing can be performed without causing clogging in the grinding wheel of a resin bond containing fine abrasive grains, high-grade surface roughness can be realized, and processing efficiency is relatively high. The controllability of the dressing is excellent, automation of dressing and in-process dressing can also be realized, a system which contains no metal ion in the whole processing can be designed, an expensive device is not required, and handling is easy.

Abstract translation: PCT No.PCT / JP98 / 03662 371日期1999年8月9日 102（e）1999年8月9日PCT PCT 1998年8月19日PCT公布。 出版物WO99 /​​ 12705 1999年3月18日光反应砂轮1通过与砂轮相对设置的光照射装置2照射，引起化学反应和性质变化，并通过溶液4溶解/除去 同时，由光反应性砂轮1处理工件5.因此，可以进行处理，而不会在包含细磨料的树脂粘结剂的砂轮中产生堵塞，可以实现高等级的表面粗糙度和加工 效率比较高。 敷料的可控性优异，也可以实现敷料自动化和整个加工中的修整，可以设计在整个加工过程中不含金属离子的系统，不需要昂贵的装置，操作容易。

公开(公告)号：US6063493A

公开(公告)日：2000-05-16

申请号：US989331

申请日：1997-12-11

Applicant: Tatsuoki Saitou ,  Takashi Yamashita ,  Takashi Fukushima ,  Masaru Nihouda

Inventor： Tatsuoki Saitou ,  Takashi Yamashita ,  Takashi Fukushima ,  Masaru Nihouda

IPC: C09J7/02 ,  B32B7/12

CPC classification number: C09J7/0296 ,  C09J2400/263 ,  Y10T428/26 ,  Y10T428/269 ,  Y10T428/28 ,  Y10T428/2848

Abstract: A pressure-sensitive adhesive tape which is a laminate made up of (1) a woven fabric layer whose warp and weft are thermoplastic-resin-made flat yarns, (2) a layer of polyethylene having a density (D) of 0.875 to 0.917 kg/cm.sup.3 and an MFR of 1 to 25 g/10 min, laminated to one surface or both surfaces of the woven fabric layer, and (3) a pressure-sensitive adhesive layer laminated to the polyethylene layer (2), wherein the laminate fulfills the following relationship:W.ltoreq.-0.03T+2.4in which T represents the thickness (.mu.m) of the polyethylene layer, and W represents the tear strength (kg) of the pressure-sensitive adhesive tape in the crosswise direction thereof, wherein the pressure-sensitive adhesive tape can be cut by hand in the direction rectangular to the longer direction of the tape.

Abstract translation: 一种压敏粘合带，其是由（1）经编和纬纱是热塑性树脂制的扁平纱线的织造织物层组成的层压材料，（2）密度（D）为0.875-0.917的聚乙烯层 kg / cm 3，MFR为1〜25g / 10分钟，层压到织物层的一个表面或两个表面，（3）层压在聚乙烯层（2）上的压敏粘合剂层，其中层压 满足以下关系：W

公开(公告)号：US06013951A

公开(公告)日：2000-01-11

申请号：US116242

申请日：1998-07-16

Applicant: Tomohiro Ishida ,  Shigeru Harada ,  Takashi Yamashita

Inventor： Tomohiro Ishida ,  Shigeru Harada ,  Takashi Yamashita

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/53271 ,  H01L23/5226 ,  H01L2924/0002

Abstract: A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.

Abstract translation: 形成在硅衬底上的第一多晶硅导线由形成在第一掺杂多晶硅层上的第一掺杂多晶硅层和第一钨硅化物层组成。 在硅衬底上形成的层间绝缘膜具有到达第一掺杂多晶硅层的开口。 形成在层间绝缘膜上的第二多孔化合物引线由连接到开口中的第一多晶硅引线的第二掺杂多晶硅层和形成在第二掺杂多晶硅层上的第二硅化钨层组成。 在开口中，第一和第二掺杂多晶硅层在第一多晶硅导线的侧表面处彼此接触。

公开(公告)号：US5625858A

公开(公告)日：1997-04-29

申请号：US586091

申请日：1996-01-16

Applicant: Yoshihiro Hirai ,  Takashi Yamashita ,  Masaaki Takenaka

Inventor： Yoshihiro Hirai ,  Takashi Yamashita ,  Masaaki Takenaka

IPC: G03G15/02

CPC classification number: G03G15/0233

Abstract: A contact charging member to be abutted against a charge-receiving member and supplied with a voltage for charging the charge-receiving member is provided. The charging member includes an electroconductive substrate, an elastic layer and a surface layer disposed in lamination. The surface layer comprises crosslinked polymer crosslinked by irradiation with an electron beam. The surface layer may preferably be in the form of a seamless tube formed of the crosslinked polymer. The surface layer crosslinked by electron beam irradiation is less liable to suffer from transfer of a crosslinking agent or a decomposition product thereof to the charge-receiving member. Accordingly, the charging member shows improved durability and stably uniform charging ability suitable for electrophotographic image formation under various environmental conditions.

Abstract translation: 提供接触充电构件以抵靠电荷接收构件并提供用于对电荷接收构件充电的电压。 充电构件包括导电衬底，弹性层和层压设置的表面层。 表面层包含通过用电子束照射而交联的交联聚合物。 表面层可以优选为由交联聚合物形成的无缝管的形式。 通过电子束照射交联的表面层不太容易将交联剂或其分解产物转移到电荷接收部件。 因此，充电构件在各种环境条件下显示出改善的耐久性和适合于电子照相图像形成的稳定均匀充电能力。

公开(公告)号：US5613455A

公开(公告)日：1997-03-25

申请号：US495256

申请日：1995-06-27

Applicant: Takashi Yamashita ,  Mitsuo Watanabe

Inventor： Takashi Yamashita ,  Mitsuo Watanabe

IPC: D05B55/06 ,  D05B57/00 ,  D05B57/14 ,  D05B57/26 ,  B65H57/00

CPC classification number: D05B57/26 ,  D05B57/00

Abstract: A needle receiving assembly for a sewing machine comprising a throat plate through which a sewing needle can pass and a needle collar for regulating a rear loop of an upper thread passing through the sewing needle. The position of the needle collar relative to the sewing needle is adjustable.

Abstract translation: 一种用于缝纫机的针头接收组件，包括缝合针可以通过的喉板和用于调节通过缝纫针的上线的后圈的针圈。 针圈相对于缝纫针的位置是可调节的。

公开(公告)号：US5549062A

公开(公告)日：1996-08-27

申请号：US496095

申请日：1995-06-28

Applicant: Takashi Yamashita ,  Minoru Wada

Inventor： Takashi Yamashita ,  Minoru Wada

IPC: D05B49/02 ,  D05B55/14 ,  D05B57/30 ,  D05B57/36 ,  D05B69/26 ,  D05B69/16

CPC classification number: D05B57/30

Abstract: A shuttle hook driving device for driving a shuttle hook having a beak disposed between a needle drop position and a bobbin thread lead-out point of a bobbin in a sewing machine which includes a main shaft, a needle bar, a thread take-up lever, and a conversion mechanism for converting a rotation of the main shaft into an oscillating motion, the shuttle hook driving device comprises: a counter balance connected to the needle bar and the thread take-up lever, the counter balance being mounted on the main shaft such that the counter balance is displaced a predetermined angle with respect to the main shaft as compared with a standard sewing machine; an output shaft received the oscillating motion from the conversion mechanism, the output shaft being connected to the conversion device in right-left inverted relation with respect to an axis thereof as compared with the standard sewing machine, using an uppermost point of the needle bar as a reference; and a driver connected to the output shaft, for driving the shuttle hook.

Abstract translation: 一种穿梭钩驱动装置，用于驱动梭子钩，所述梭钩具有设置在缝纫机中的针脱落位置和线筒的底线引出点之间的喙部，该缝纫机包括主轴，针杆，线取出杆 以及用于将主轴的旋转变换为摆动的转换机构，所述梭钩驱动装置包括：与所述针杆和所述卷取杆连接的对置平衡台，所述对平衡部安装在所述主轴 使得与标准缝纫机相比，相对于主轴相对于平衡板偏移预定角度; 输出轴接受来自转换机构的摆动运动，与标准缝纫机相比，输出轴以相对于其轴的左右倒置关系连接到转换装置，使用针杆的最上点作为 参考; 以及连接到输出轴的驱动器，用于驱动梭梭。

公开(公告)号：US5101255A

公开(公告)日：1992-03-31

申请号：US384080

申请日：1989-07-24

Applicant: Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

Inventor： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

IPC: H01L31/0272 ,  H01L31/09

CPC classification number: H01L31/0272 ,  H01L31/095

Abstract: Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Abstract translation: 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。