公开(公告)号：US20190237119A1

公开(公告)日：2019-08-01

申请号：US16068523

申请日：2018-02-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: G11C11/16 ,  G11C11/18 ,  G01R33/09 ,  H01L27/22 ,  G11C7/04

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/18 ,  H01L27/228

Abstract: A data writing method according to an aspect is configured such that a spin-orbit torque-type magnetoresistance effect element includes: a spin-orbit torque wire extending in a first direction; and a functional portion having a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer stacked on one surface of the spin-orbit torque wire in that order from the spin-orbit torque wire, wherein a voltage applied in the first direction of the spin-orbit torque wire is equal to or higher than a critical writing voltage at an environmental temperature and is equal to or lower than a predetermined value.

公开(公告)号：US20190221733A1

公开(公告)日：2019-07-18

申请号：US16359040

申请日：2019-03-20

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  G11C11/18 ,  H01L43/14 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A spin-orbit torque type magnetization reversal element including a ferromagnetic metal layer with a varying magnetization direction; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the ferromagnetic metal layer and that is joined to the ferromagnetic metal layer; wherein when viewed from the first direction, the spin-orbit torque wiring is asymmetrical in a second direction that is orthogonal to the first direction and the stacking direction, with respect to an axis that passes through a center, in the second direction, of the ferromagnetic metal layer.

公开(公告)号：US20190221230A1

公开(公告)日：2019-07-18

申请号：US16250557

申请日：2019-01-17

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11B5/39 ,  H01L43/08 ,  H01F10/193 ,  H01L27/22 ,  G11C11/16 ,  H01L27/105 ,  H01L43/10

CPC classification number: G11B5/3909 ,  G11B5/39 ,  G11B2005/3996 ,  G11C11/161 ,  H01F1/405 ,  H01F10/1936 ,  H01L27/105 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

公开(公告)号：US20190157546A1

公开(公告)日：2019-05-23

申请号：US16251783

申请日：2019-01-18

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/08 ,  H01F10/32 ,  H01L27/105 ,  H01L29/82 ,  G01R33/09 ,  H01L43/10 ,  H01F10/30 ,  H01F10/16 ,  G11B5/39

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer has a spinel structure in which cations are arranged in a disordered manner, and the tunnel barrier layer is expressed by a composition formula of (M1-xZnx)((T1)2-y(T2)y)O4 wherein M represents a non-magnetic divalent cation other than Zn, each of T1 and T2 represents a non-magnetic trivalent cation, and x and y represent a composition ratio in a region where composition ratios combined as follows ((1) to (5)) are vertexes, and the vertexes are connected by straight lines: (1) x=0.2, y=0.1, (2) x=0.8, y=0.1, (3) x=0.8, y=1.7, (4) x=0.6, y=1.7, and (5) x=0.2, y=0.7.

公开(公告)号：US20190103552A1

公开(公告)日：2019-04-04

申请号：US16083202

申请日：2017-10-27

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Minoru OTA ,  Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

公开(公告)号：US20190074430A1

公开(公告)日：2019-03-07

申请号：US16113592

申请日：2018-08-27

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

Abstract: A spin flow magnetization reversal element includes a first ferromagnetic metal layer capable of changing a direction of magnetization; and a spin orbit torque wiring layer joined to the first ferromagnetic metal layer and extending in a direction intersecting a direction perpendicular to a plane of the first ferromagnetic metal layer. The spin orbit torque wiring layer includes at least one light element L among B, C, Si and P and at least one noble gas element among Ar, Kr and Xe.

公开(公告)号：US20190074123A1

公开(公告)日：2019-03-07

申请号：US16101949

申请日：2018-08-13

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yugo ISHITANI ,  Keita SUDA

IPC: H01F10/32 ,  G11C11/16 ,  H03H11/04 ,  H01L43/02

Abstract: Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.

公开(公告)号：US20180351083A1

公开(公告)日：2018-12-06

申请号：US15778159

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11B5/39 ,  G11C11/161 ,  H01L27/105 ,  H01L27/222 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H03B15/00

Abstract: A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

公开(公告)号：US20180337326A1

公开(公告)日：2018-11-22

申请号：US15777894

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

公开(公告)号：US20180301199A1

公开(公告)日：2018-10-18

申请号：US15945119

申请日：2018-04-04

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11C19/08 ,  H01L27/22 ,  H01L43/08 ,  H01L43/06 ,  G11C11/16 ,  H03K19/168

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C27/00 ,  H01F10/3254 ,  H01F10/329 ,  H01L27/226 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H03K19/168

Abstract: A magnetic domain wall type analog memory element includes: a magnetization fixed layer in which magnetization is oriented in a first direction; a non-magnetic layer provided in one surface of the magnetization fixed layer; a magnetic domain wall drive layer including a first area in which magnetization is oriented in the first direction, a second area in which magnetization is oriented in a second direction opposite to the first direction, and a magnetic domain wall formed as an interface between the areas and provided to sandwich the non-magnetic layer with respect to the magnetization fixed layer; and a current controller configured to cause a current to flow between the magnetization fixed layer and the second area at the time of reading.