公开(公告)号：US20050217561A1

公开(公告)日：2005-10-06

申请号：US10506493

申请日：2003-12-22

申请人： Akihiko Namba ,  Takahiro Imai ,  Hisao Takeuchi

发明人： Akihiko Namba ,  Takahiro Imai ,  Hisao Takeuchi

IPC分类号： C30B29/04 ,  C23C16/27 ,  C23C16/448 ,  C23C16/48 ,  C30B25/10 ,  H01L21/205 ,  H01L21/22 ,  C30B7/00 ,  C30B21/02 ,  C30B28/06

CPC分类号： C23C16/448 ,  C23C16/27 ,  C23C16/278 ,  C23C16/482 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634

摘要： Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 1017 cm−3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

摘要翻译： 关注锂掺杂金刚石：提供掺杂有锂和氮的低电阻率n型半导体金刚石，以及制造这种金刚石的方法。 含有10个以上的锂原子和氮原子的10个以上的低电阻率n型半导体金刚石，其中分别将掺杂的锂原子分成碳原子间隙 晶格位点和氮原子转变成碳原子取代位置，其中锂和氮保持排列彼此相邻。 为了获得低电阻率n型半导体金刚石，在金刚石的汽相合成方法中，通过使用真空紫外光的光激发光解离源材料并用准分子激光器照射锂源材料来散射和供应锂原子，使得金刚石 生产。

公开(公告)号：US06876136B2

公开(公告)日：2005-04-05

申请号：US10660633

申请日：2003-09-12

申请人： Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

发明人： Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J19/24

CPC分类号： H01J1/3044 ,  H01J2201/30457

摘要： An electron emission element according to the present invention comprises a substrate, and a plurality of protrusions composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion, the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion, which is located on the columnar portion having a spicular end. A conductive layer is formed on the upper part of each columnar portion, and a cathode electrode film, which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

摘要翻译： 根据本发明的电子发射元件包括基底和由金刚石组成并从基底突出的多个突起。 每个突起包括柱状部分，其侧面相对于基底的表面形成约90°的倾斜，并且位于柱状部分上的尖端部分具有相关端。 在每个柱状部分的上部形成导电层，并且在柱状部分的侧面上形成与导电层电连接的阴极电极膜。

公开(公告)号：US20050000938A1

公开(公告)日：2005-01-06

申请号：US10774417

申请日：2004-02-10

申请人： Yoshiki Nishibayashi ,  Kiichi Meguro ,  Takahiro Imai ,  Yutaka Ando

发明人： Yoshiki Nishibayashi ,  Kiichi Meguro ,  Takahiro Imai ,  Yutaka Ando

IPC分类号： C01B31/06 ,  C30B29/04 ,  C30B33/00 ,  H01J1/304 ,  H01J9/02 ,  C23F1/00

CPC分类号： H01J9/025 ,  C30B29/04 ,  C30B33/00 ,  H01J1/3044 ,  Y10T428/24355 ,  Y10T428/24628 ,  Y10T428/30

摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

摘要翻译： 制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻 由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

公开(公告)号：US06837935B2

公开(公告)日：2005-01-04

申请号：US10222085

申请日：2002-08-16

申请人： Kiichi Meguro ,  Takashi Matsuura ,  Takahiro Imai

发明人： Kiichi Meguro ,  Takashi Matsuura ,  Takahiro Imai

IPC分类号： C30B29/04 ,  C23C16/27 ,  C23C16/511 ,  C23C16/52 ,  C30B25/02 ,  C23C16/00 ,  H05H1/00

CPC分类号： C23C16/274 ,  C23C16/52

摘要： An apparatus forms a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. Using the apparatus, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured using a spectroscope. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation condition, such as the microwave input power, the reactor pressure, or the gas flow rate, is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

摘要翻译： 一种装置通过基于等离子体发光的光谱测量控制制造条件从微波等离子体形成金刚石膜，以获得大面积的高品质金刚石膜。 使用该装置，将烃气体和氢气的气体混合物引入反应器中，其中气体混合物由也被引入反应器中的微波能量激发以产生等离子体，并且从光谱测量从等离子体发射的光 使用分光镜。 此外，控制金刚石膜的形成条件使得碳分子（C2）的光谱落在预定的要求范围内。 从光谱确定碳分子振动温度，控制微波输入功率，反应器压力或气体流量等的形成条件，使得所确定的振动温度落在规定范围内，特别是2000〜 2800 K.

公开(公告)号：US06661152B2

公开(公告)日：2003-12-09

申请号：US10264264

申请日：2002-10-04

申请人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

发明人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

IPC分类号： H03H925

CPC分类号： H03H9/02582

摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.

摘要翻译： 通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。 这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。 通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

公开(公告)号：US06316826B1

公开(公告)日：2001-11-13

申请号：US09408875

申请日：1999-09-29

申请人： Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： H01L2315

CPC分类号： H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor mounting package includes at least one diamond member having a first surface on which at least one semiconductor chip is mounted and a second surface opposite the first surface, and a high thermal conductivity metal member adhered to the second surface of the diamond member.

摘要翻译： 半导体安装封装包括至少一个具有第一表面的金刚石构件，其上安装有至少一个半导体芯片和与第一表面相对的第二表面，以及粘附到金刚石构件的第二表面的高导热性金属构件。

公开(公告)号：US5624719A

公开(公告)日：1997-04-29

申请号：US279088

申请日：1994-07-22

申请人： Keiichiro Tanabe ,  Takahiro Imai ,  Naoji Fujimori

发明人： Keiichiro Tanabe ,  Takahiro Imai ,  Naoji Fujimori

IPC分类号： C23C16/27 ,  C30B25/02 ,  B01J3/06

CPC分类号： C23C16/27 ,  C23C16/277 ,  C30B25/02 ,  C30B29/04

摘要： A method for synthesizing diamond by chemical vapor deposition (CVD) is described. The method produces diamond of high purity and high crystallizability having various uses at low cost and at high speed. In a first method, a mixture of oxygen gas and a carbon-containing compound gas, and optionally an inert gas, is introduced into a reaction vessel. In a second method, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas, sulfur dioxide, an aforementioned mixture of oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into the reaction vessel. A plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.

摘要翻译： 描述了通过化学气相沉积（CVD）合成金刚石的方法。 该方法以低成本和高速度生产具有各种用途的高纯度和高结晶度的金刚石。 在第一种方法中，将氧气和含碳化合物气体以及任选的惰性气体的混合物引入反应容器中。 在第二种方法中，引入含有氟气，氯气，氮氧化物气体，二氧化硫，上述氧气和含碳化合物气体的混合物或其与惰性气体的混合物中的至少一种的混合物 进入反应容器。 通过使用电磁场产生等离子体，从而在放置在容器中的基底材料上产生金刚石。

公开(公告)号：US5373171A

公开(公告)日：1994-12-13

申请号：US165734

申请日：1988-03-09

申请人： Takahiro Imai ,  Naoji Fujimori ,  Hideaki Nakahata

发明人： Takahiro Imai ,  Naoji Fujimori ,  Hideaki Nakahata

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L27/10

CPC分类号： H01L21/02376 ,  H01L21/02444 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/931

摘要： A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal.

摘要翻译： 一种可用于制造半导体的薄膜单晶衬底，包括由单晶金刚石制成的基底衬底和至少一种选自碳化硅，硅，氮化硼等的材料的单晶薄膜， 氮化镓，氮化铟，氮化铝，磷化硼，硒化镉，锗，砷化镓，磷化镓，磷化铟，锑化锑，砷化铟，锑化锑，磷化铝，砷化铝，锑化锑，碲化镉， 氧化锌，硫化锌，硒化锌和碲化锌，以及任选地在基底衬底和单晶薄膜之间的中间层，其任选地包括在基底衬底和单晶薄膜之间的中间层。

公开(公告)号：US5258091A

公开(公告)日：1993-11-02

申请号：US882683

申请日：1992-05-12

申请人： Takahiro Imai ,  Naoji Fujimori

发明人： Takahiro Imai ,  Naoji Fujimori

IPC分类号： H01J35/18 ,  H01L21/20 ,  C30B25/00

CPC分类号： H01J35/18 ,  H01J2235/183

摘要： An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.

摘要翻译： 具有金刚石X射线透明膜的X射线窗，金刚石加强肋和已经生长了金刚石X射线透明膜的基板。 由于加强挡板由金刚石制成，所以在X射线透明膜和挡条之间不产生热应力。 该面膜的平面度，X射线透过率和强度均优异。

公开(公告)号：US5197651A

公开(公告)日：1993-03-30

申请号：US573062

申请日：1990-08-24

申请人： Tsutomu Nakamura ,  Katsuyuki Tanaka ,  Tetuso Nakai ,  Takahiro Imai ,  Akihiko Ikegaya ,  Naoji Fujimori

发明人： Tsutomu Nakamura ,  Katsuyuki Tanaka ,  Tetuso Nakai ,  Takahiro Imai ,  Akihiko Ikegaya ,  Naoji Fujimori

IPC分类号： C04B41/50 ,  C04B41/85

CPC分类号： C04B41/009 ,  C04B41/5002 ,  C04B41/85 ,  H01L24/75 ,  H01L2924/12033 ,  H01L2924/351

摘要： A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.