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    Miniature device for generating a multi-polar field, in particular for filtering or deviating or focusing charged particles
    131.
    发明授权
    Miniature device for generating a multi-polar field, in particular for filtering or deviating or focusing charged particles 失效
    用于产生多极场的微型装置，特别是用于过滤或偏离或聚焦带电粒子

    公开(公告)号：US06465792B1

    公开(公告)日：2002-10-15

    申请号：US09381917

    申请日：1999-09-27

    Applicant: Robert Baptist

    Inventor： Robert Baptist

    IPC: H01J4900

    CPC classification number: H01J49/4215 ,  H01J49/0018 ,  H01J2237/1205

    Abstract: The invention relates to a micro-device for generating a multi-polar transverse field, or a micro-device for the filtration or the deflection or the focusing of charged particles, comprising n longitudinal conductive micro-beams (32, 34, 36, 38), of polygonal cross section, and arranged around a longitudinal axis (AA′).

    Abstract translation: 本发明涉及用于产生多极横向场的微器件或用于过滤或偏转或聚焦带电粒子的微器件，其包括n个纵向导电微束（32,34,36,38 ），并且围绕纵向轴线（AA'）布置。

    Method for fabrication of silicon octopole deflectors and electron column employing same
    132.
    发明申请
    Method for fabrication of silicon octopole deflectors and electron column employing same 审中-公开
    制造硅八极偏转器的方法和使用其的电子柱

    公开(公告)号：US20020125440A1

    公开(公告)日：2002-09-12

    申请号：US09800797

    申请日：2001-03-07

    Applicant: Applied Materials, Inc.

    Inventor： Max Gmur

    IPC: H01J003/14

    CPC classification number: H01J9/02 ,  H01J37/1477 ,  H01J2237/1205

    Abstract: A wafer (300) has applied to it an etch stop layer (304) and a carrier wafer (308). Photoresist on the wafer (300) is patterned as multiple multipole deflectors by optical lithography. The pattern is then etched. The wafer (300) is removed from the carrier wafer (308) and the etch stop layer (304) is removed. The wafer (300) is then anodically bonded to a heat resistant glass substrate (309). Wafer dic ng is then employed to separate the chips and the octopole deflectors.

    Abstract translation: 晶片（300）向其施加了蚀刻停止层（304）和载体晶片（308）。 通过光学光刻将晶片（300）上的光致抗蚀剂图案化为多个多极偏转器。 然后刻蚀图案。 将晶片（300）从载体晶片（308）移除，并且去除蚀刻停止层（304）。 然后将晶片（300）阳极结合到耐热玻璃基板（309）上。 然后使用晶片分离芯片和八极偏转器。

    Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
    133.
    发明申请
    Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method 失效
    电光系统阵列，带电粒子束曝光装置及其制造方法

    公开(公告)号：US20020005491A1

    公开(公告)日：2002-01-17

    申请号：US09819672

    申请日：2001-03-29

    Inventor： Takayuki Yagi ,  Haruhito Ono ,  Yasuhiro Shimada

    IPC: G21K001/08

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205

    Abstract: This invention provides an electrooptic system array having a plurality of electron lenses. This electrooptic system array has at least two electrode structures which respectively include membranes each having a plurality of apertures and are arranged along the optical axis, and a spacer which is interposed between the facing membranes and determines the gap between the facing membranes.

    Abstract translation: 本发明提供一种具有多个电子透镜的电光系统阵列。 该电光系统阵列具有至少两个电极结构，其分别包括各自具有多个孔并且沿着光轴布置的膜，以及插入在相对的膜之间的间隔物，并且确定了相对的膜之间的间隙。

    Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method
    134.
    发明申请
    Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method 失效
    电子光学系统阵列，其制造方法，带电粒子束曝光装置和器件制造方法

    公开(公告)号：US20010054690A1

    公开(公告)日：2001-12-27

    申请号：US09819669

    申请日：2001-03-29

    Inventor： Yasuhiro Shimada ,  Takayuki Yagi ,  Haruhito Ono

    IPC: G21K007/00 ,  G01N023/00

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J2237/1205

    Abstract: This invention relates to an electron optical system array having a plurality of electron lenses. The electron optical system array includes a plurality of electrodes arranged along the paths of a plurality of charged-particle beams. Each of the plurality of electrodes has a membrane in which a plurality of apertures are formed on the paths of the plurality of charged-particle beams, and a support portion which supports the membrane. At least two of the plurality of electrodes are arranged to form a nested structure.

    Abstract translation: 本发明涉及具有多个电子透镜的电子光学系统阵列。 电子光学系统阵列包括沿着多个带电粒子束的路径布置的多个电极。 多个电极中的每个电极具有多个孔径形成在多个带电粒子束的路径上的膜和支撑膜的支撑部分。 多个电极中的至少两个布置成形成嵌套结构。

    Pattern inspection apparatus and electron beam apparatus
    135.
    发明授权
    Pattern inspection apparatus and electron beam apparatus 失效
    图案检查装置和电子束装置

    公开(公告)号：US5557105A

    公开(公告)日：1996-09-17

    申请号：US320377

    申请日：1994-10-11

    Applicant: Ichiro Honjo ,  Kenji Sugishima ,  Masaki Yamabe

    Inventor： Ichiro Honjo ,  Kenji Sugishima ,  Masaki Yamabe

    IPC: H01J37/30 ,  H01J37/06 ,  H01J37/244

    CPC classification number: H01J37/04 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3007 ,  H01J2237/04924 ,  H01J2237/062 ,  H01J2237/0635 ,  H01J2237/1205 ,  H01J2237/1504 ,  H01J2237/1516 ,  H01J2237/153 ,  H01J2237/24455 ,  H01J2237/2447 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2817

    Abstract: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus includes a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.

    Abstract translation: 图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查 和/或穿过检查样品的透射电子。 图案检查装置包括电子束发生器，其包括至少一个电子枪，用于产生照射到检查样品表面上的至少一个电子束。 提供用于支撑检查样品的可移动支撑件。 该装置还包括具有多个电子检测元件的检测器单元，用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器，用于同时或并行地形成检测器的电子检测元件的输出。 此外，当使用多个电子束同时照射检查样本时，图案检查装置包括用于避免相邻电子束的反射电子之间的干涉的机构。

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