公开(公告)号：US20140184074A1

公开(公告)日：2014-07-03

申请号：US13728964

申请日：2012-12-27

Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION

Inventor： Luke Perkins

IPC: H01J27/02 ,  H01J27/04

CPC classification number: H01J27/04 ,  H01J37/08 ,  H01J2237/082 ,  H05H3/06

Abstract: An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the anode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one field emitter array (FEA) cathode is configured to electrostatically discharge due to an electric field in the ion source. The back passive cathode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generating a magnetic field, such that a Penning-type trap is produced to confine electrons from the electrostatic discharge to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.

Abstract translation: 用于辐射发生器管的离子源包括后无源阴极电极，位于后无源阴极电极下游的无源阳极电极，与阳极相邻的磁体和在被动阳极电极下游的前无源阴极电极。 前无源阴极电极和后无源阴极电极在其间限定电离区域。 至少一个场发射极阵列（FEA）阴极被配置为由于离子源中的电场而静电放电。 后无源阴极电极和被动阳极电极以及前无源阴极电极和被动阳极电极之间具有各自的电压差，并且磁体产生磁场，使得产生Penning型阱以将电子限制在 静电放电到电离区域。 电离区域中的至少一些电子与可电离气体相互作用以产生离子。

公开(公告)号：US08756021B2

公开(公告)日：2014-06-17

申请号：US12912312

申请日：2010-10-26

Applicant: Russell J. Low ,  Kevin M. Daniels ,  Bon-Woong Koo ,  Richard M. White ,  James W. Blanchette

Inventor： Russell J. Low ,  Kevin M. Daniels ,  Bon-Woong Koo ,  Richard M. White ,  James W. Blanchette

IPC: G01B3/44

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/242 ,  H01J2237/304

Abstract: A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.

Abstract translation: 控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率 。 确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。 另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命 偏置功率和源偏置功率的降低率。

公开(公告)号：US08742373B2

公开(公告)日：2014-06-03

申请号：US12965419

申请日：2010-12-10

Applicant: Svetlana Radovanov ,  Ludovic Godet ,  Christopher R. Hatem

Inventor： Svetlana Radovanov ,  Ludovic Godet ,  Christopher R. Hatem

IPC: H01J37/32

CPC classification number: H01J37/32412 ,  C23C14/06 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32623 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31701

Abstract: A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.

Abstract translation: 使用至少第一功率和第二功率在等离子体室中的一种或多种气体形成等离子体。 在所述第一功率下产生第一离子种类，并且在所述第二功率下产生第二离子种类。 在一个实施例中，使用至少第一偏置电压和第二偏置电压将第一离子种类和第二离子种类以两种不同的能量注入到工件中。 这可以使植入到两个不同的深度。 这些离子种类可以是原子离子或分子离子。 分子离子可能大于用于形成等离子体的气体。

公开(公告)号：US08723143B2

公开(公告)日：2014-05-13

申请号：US13276731

申请日：2011-10-19

Applicant: Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

Inventor： Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

IPC: G21G5/00

CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

公开(公告)号：US08703607B2

公开(公告)日：2014-04-22

申请号：US13888924

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US20140087483A1

公开(公告)日：2014-03-27

申请号：US13847069

申请日：2013-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi OHSAWA ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Naoki Tamaoki

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/3056 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

Abstract translation: 根据一个实施例，磁阻效应元件的制造方法包括在基板上形成叠层结构，层压结构包括具有可变磁化方向的第一磁性层，具有不变磁化方向的第二磁性层， 在第一和第二磁性层之间形成磁性层，在叠层结构上形成具有预定平面形状的第一掩模层，并且通过使用在基板的中心处具有立体角的离子束来处理基于第一掩模层的层叠结构 是10°以上。

公开(公告)号：US20140076162A1

公开(公告)日：2014-03-20

申请号：US14036882

申请日：2013-09-25

Applicant: Charles Houston WADDELL ,  Joseph Anton CHRISTIANSEN

Inventor： Charles Houston WADDELL ,  Joseph Anton CHRISTIANSEN

IPC: B03C3/41 ,  B03C3/011

CPC classification number: A61L9/22 ,  A61L2209/16 ,  B01D46/0032 ,  B01D46/521 ,  B03C3/011 ,  B03C3/04 ,  B03C3/155 ,  B03C3/41 ,  B03C3/82 ,  F01N3/0892 ,  F02M27/04 ,  F02M27/042 ,  F02M35/0205 ,  F02M35/0217 ,  F16M13/02 ,  F24F3/166 ,  F24F2003/1682 ,  H01J27/022 ,  H01J27/028 ,  H01J37/08 ,  H01J37/16 ,  H01J37/3002 ,  H01T23/00

Abstract: A system and method of treating air. Bipolar ionization is delivered to an airflow within a conduit from a tubeless ion generator. The ionized airflow may be delivered to a conditioned airspace by an HVAC system. In alternate applications, the airflow delivers ionized combustion air to an engine. The invention also includes a mounting assembly for positioning one or more ion generators into an airflow.

Abstract translation: 一种处理空气的系统和方法。 双极电离从无内胎离子发生器输送到导管内的气流中。 电离气流可以通过HVAC系统输送到调节空气空间。 在替代应用中，气流将离子化的燃烧空气传送到发动机。 本发明还包括用于将一个或多个离子发生器定位到气流中的安装组件。

公开(公告)号：US08669538B1

公开(公告)日：2014-03-11

申请号：US13796639

申请日：2013-03-12

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Bon-Woong Koo ,  Christopher J. Leavitt ,  Peter F. Kurunczi ,  Timothy J. Miller ,  Svetlana B. Radovanov

IPC: H01J37/317 ,  H01J49/10 ,  H01L21/265

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006

Abstract: A system for improving ion beam quality is disclosed. According to one embodiment, the system comprises an ion source, having a chamber defined by a plurality of chamber walls; an RF antenna disposed on a first wall of the plurality of chamber walls; a second wall, opposite the first wall, the distance between the first wall and the second wall defining the height of the chamber; an aperture disposed on one of the plurality of chamber walls; a first gas inlet for introducing a first source gas to the chamber; and a second gas inlet for introducing a second source gas, different from the first source gas, to the chamber; wherein a first distance from the first gas inlet to the second wall is less than 35% of the height; and a second distance from the second gas inlet to the first wall is less than 35% of the height.

Abstract translation: 公开了一种改善离子束质量的系统。 根据一个实施例，系统包括离子源，其具有由多个室壁限定的室; 设置在所述多个室壁的第一壁上的RF天线; 与所述第一壁相对的第二壁，所述第一壁和所述第二壁之间的距离限定所述室的高度; 设置在所述多个室壁之一上的孔; 用于将第一源气体引入所述室的第一气体入口; 以及第二气体入口，用于将不同于第一源气体的第二源气体引入腔室; 其中从所述第一气体入口到所述第二壁的第一距离小于所述高度的35％; 并且从第二气体入口到第一壁的第二距离小于高度的35％。

公开(公告)号：US20140062286A1

公开(公告)日：2014-03-06

申请号：US14011575

申请日：2013-08-27

Applicant: SEN Corporation

Inventor： Masateru Sato

IPC: H01J5/10

CPC classification number: H01J5/10 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/31701

Abstract: An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

Abstract translation: 离子产生方法使用设置有由高熔点材料形成的电弧室的直流放电离子源，并且包括：通过使源气体的分子与电弧室中的热电子碰撞并产生等离子体放电而产生离子; 并且使产生离子产生的自由基与至少部分地覆盖电弧室的内壁的衬垫反应。 衬垫由与源电极气体相比所产生的自由基反应的材料形成为比电弧室的材料更为反应。

公开(公告)号：US20140061816A1

公开(公告)日：2014-03-06

申请号：US14073565

申请日：2013-11-06

Applicant: SemEquip, Inc.

Inventor： Thomas N. Horsky ,  Dale C. Jacobson

IPC: H01L21/265 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：向离子化室提供含有多个掺杂剂原子的分子，将所述分子电离成掺杂剂簇离子，用电场提取和加速掺杂剂簇离子，选择 通过质量分析获得所需的簇离子，通过后分析离子光学器件改变簇离子的最终注入能量，以及将掺杂剂簇离子注入到半导体衬底中。 通常，掺杂剂分子含有n个掺杂剂原子，其中n是大于10的整数。这种方法可以将掺杂剂剂量率增加到n次注入电流，每个掺杂剂原子能量的等效量为簇注入能量的1 / n倍 ，同时减少每个掺杂剂原子的电荷乘以因子n。