Abstract:
A cooling device includes a heat sink base plate for mounting on a circuit board to absorb waste heat from a heat source, a radiation fin unit consisting of a set of radiation fins, mounted on the heat sink base plate opposite to the circuit board and defining a plurality of heat-dissipation passages between each two adjacent ones of the radiation fins, a cooling fan unit mounted on the radiation fin unit for creating currents of air toward the heat-dissipation passages, a plurality of thermal tubes supported on the heat sink base plate and fastened to the radiation fins. Each radiation fin has first wind guiding wall portions and second wind guiding wall portions respectively tilted in reversed directions to facilitate the flow of air through the heat-dissipation passages.
Abstract:
A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.
Abstract:
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.
Abstract:
A blue LED device has a transparent substrate and a reflector structure disposed on the backside of the substrate. The reflector structure includes a Distributed Bragg Reflector (DBR) structure having layers configured to reflect yellow light as well as blue light. In one example, the DBR structure includes a first portion where the thicknesses of the layers are larger, and also includes a second portion where the thicknesses of the layers are smaller. In addition to having a reflectance of more than 97.5 percent for light of a wavelength in a 440 nm-470 nm range, the overall reflector structure has a reflectance of more than 90 percent for light of a wavelength in a 500 nm-700 nm range.
Abstract:
A chemical-mechanical polishing process includes the steps of providing a semiconductor substrate having a first conductive line thereon, and then forming at least one dielectric layer over the substrate and the first conductive line. Next, a chemical-mechanical polishing method is used to polish the surface of the dielectric layer. Thereafter, a cap layer is formed over the polished dielectric layer. The method of forming the cap layer includes depositing silicon oxide using a chemical vapor deposition method with silicane (SiH4) or tetra-ethyl-ortho-silicate (TEOS) as the main reactive agent. Alternatively, the cap layer can be formed by depositing silicon nitride using a chemical vapor deposition method with silicane or silicon dichlorohydride (SiH2Cl2) as the main reactive agent. Finally, a via opening is formed through the dielectric layer and the cap layer, and a second conductive line that couples electrically with the first conductive line through the via opening.
Abstract:
An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.
Abstract:
A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.
Abstract:
A golf bag has a cord, a bottom frame and a top frame. The bottom frame has a cover and a bottom cuff received therein. The bottom cuff is pivotally mounted to the cover and has a bevel surface, a lever holder and a lever received in the lever holder and tied to the cord. The top frame has a cord guide for guiding and branching the cord and two leg holders tied to two branches of the cord and abut against the cord guide. When the golf bag is tilted, the bevel surface rests on the cover, the cord is dragged down to pull and extend out the two leg holders to stand on the ground. As the cover stay intact when the bottom cuff tilts, the golf bag can stably stand and requires a simplified cord linking design.
Abstract:
A positioning and calibration method is applied in the positioning and calibration of a projection system with touch control function. The projection system includes a touch device and a projection device. The touch device has touch plates, which can be combined and formed into a plane. The projection device has projection units, which project images onto projection areas of the plane, respectively, so as to form a projection image on the plane. The positioning and calibration method includes the steps of projecting positioning markers onto the plane by the projection device; disposing a calibration element at or around each of the positioning markers; and locating and calibrating the corresponding projection unit according to a positioning signal of the calibration element delivered by the touch device. The invention makes the projection system, having touch plates, projection units and the touch control function, have the good location function.
Abstract:
A voltage adjusting circuit includes a voltage regulator module (VRM), a control chip, a connection device, and a number of first resistors. The VRM includes an input receiving a first voltage from a motherboard, and an output connected to a liquid crystal display (LCD). A number of sense terminals of the control chip are connected to the LCD to sense current of the LCD. A driven terminal of the control chip is connected to a control terminal of the VRM to output corresponding driven signals to control the VRM to output corresponding voltage to the LCD. A first terminal of each first resistor is connected to a corresponding sense terminal of the control chip. A second terminal of each first resistor is grounded. The connection device is configured to cut off or connect the first resistor from or to the corresponding sense terminal of the control chip.