公开(公告)号：US08168503B2

公开(公告)日：2012-05-01

申请号：US12726736

申请日：2010-03-18

Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

IPC: H01L21/336

CPC classification number: H01L29/7839 ,  H01L29/78654

Abstract: A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

Abstract translation: 提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。 栅极结构直接形成在第一半导体层上。 凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。 凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。 在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

公开(公告)号：US08124177B2

公开(公告)日：2012-02-28

申请号：US11089440

申请日：2005-03-23

Applicant: Anna Lee Tonkovich ,  Barry L. Yang ,  Terry Mazanec ,  Francis P. Daly ,  Sean P. Fitzgerald ,  Ravi Arora ,  Dongming Qiu ,  Bin Yang ,  Steven T. Perry ,  Kai Jarosh ,  Paul W. Neagle ,  David J. Hesse ,  Rachid Taha ,  Richard Long ,  Jeff Marco ,  Thomas D. Yuschak ,  Jeffrey J. Ramler ,  Mike Marchiando

Inventor： Anna Lee Tonkovich ,  Barry L. Yang ,  Terry Mazanec ,  Francis P. Daly ,  Sean P. Fitzgerald ,  Ravi Arora ,  Dongming Qiu ,  Bin Yang ,  Steven T. Perry ,  Kai Jarosh ,  Paul W. Neagle ,  David J. Hesse ,  Rachid Taha ,  Richard Long ,  Jeff Marco ,  Thomas D. Yuschak ,  Jeffrey J. Ramler ,  Mike Marchiando

IPC: B05D7/22

CPC classification number: B01J37/0226 ,  B01J19/0093 ,  B01J35/04 ,  B01J37/0215 ,  B01J37/0238 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/00837 ,  B01J2219/00873 ,  B01J2219/00891 ,  B01J2219/00905 ,  B01J2219/00995 ,  B01L3/502707 ,  B01L3/502746 ,  B01L2200/12 ,  B01L2300/16 ,  B01L2400/0406 ,  B01L2400/086 ,  B01L2400/088

Abstract: Interior microchannels within microchannel apparatus are uniformly coated. Remarkably, these uniform coatings are formed from materials that are applied to the interior microchannels after an apparatus has been assembled or manufactured. Coatings can be made uniform along the length of a microchannel, in the corner of a microchannel, and/or throughout numerous microchannels in an array of microchannels. Techniques for tailoring the application of washcoats onto microchannels is also described.

Abstract translation: 微通道设备内部的微通道均匀涂覆。 值得注意的是，这些均匀的涂层由在装置组装或制造之后施加到内部微通道的材料形成。 涂层可以沿着微通道的长度，微通道的角部和/或整个微通道阵列中的许多微通道而均匀。 还描述了将洗衣布应用于微通道的技术。

公开(公告)号：US08122909B2

公开(公告)日：2012-02-28

申请号：US11388792

申请日：2006-03-23

Applicant: Anna Lee Tonkovich ,  Bin Yang ,  Steven T. Perry ,  Sean P. Fitzgerald ,  Ravi Arora ,  Kai Jarosch ,  Thomas D. Yuschak ,  Maddalena Fanelli ,  Tim Sullivan ,  Terry Mazanec

Inventor： Anna Lee Tonkovich ,  Bin Yang ,  Steven T. Perry ,  Sean P. Fitzgerald ,  Ravi Arora ,  Kai Jarosch ,  Thomas D. Yuschak ,  Maddalena Fanelli ,  Tim Sullivan ,  Terry Mazanec

IPC: F15C1/06

CPC classification number: B01F5/0611 ,  B01F13/0059 ,  B01F2005/0621 ,  B01F2005/0636 ,  B01J19/0093 ,  B01J23/464 ,  B01J35/04 ,  B01J2219/00822 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00873 ,  B01J2219/00889 ,  B01J2219/00961 ,  B01L3/5027 ,  Y10T137/2224 ,  Y10T156/1093

Abstract: This invention relates to microchannel apparatus that includes microchannels with interior surface features for modifying flow; processes utilizing this microchannel architecture, and methods of making apparatus having these features.

Abstract translation: 本发明涉及微通道设备，其包括具有用于改变流动的内表面特征的微通道; 利用该微通道架构的方法，以及制造具有这些特征的装置的方法。

公开(公告)号：US08120795B2

公开(公告)日：2012-02-21

申请号：US11991394

申请日：2006-04-29

Applicant: Wenfa Qi ,  Jiquan Xie ,  Bin Yang ,  Xiaohong Ding ,  Jiang Deng

Inventor： Wenfa Qi ,  Jiquan Xie ,  Bin Yang ,  Xiaohong Ding ,  Jiang Deng

IPC: G06F15/00 ,  G06K9/00

CPC classification number: H04N1/00846 ,  G03G21/046 ,  G03G2215/00932 ,  H04N1/00875 ,  H04N1/00883

Abstract: This invention relates to a method for preventing a copy of document, belonging to a technical field of entire copy protection of document. In the prior art, for some important documents, specially the secret ones, the reproduction of this kind of document is usually prohibited by its owner because of the security. But the technique in the prior art can not solve the problem of preventing unauthorized reproduction. The method of the present invention is intended to embed a shading pattern under the original image of anti-copy document by an application program installed in the copy device, and decide whether the document can be copied legally or not. By the method of present invention, it is possible to detect the watermark information of the anti-copy document accurately and quickly, and prevent the reproduction of the anti-copy document thoroughly. Moreover, an additional memory space is no need.

Abstract translation: 本发明涉及一种防止文件副本的方法，属于整个文件复制保护的技术领域。 在现有技术中，对于一些重要的文件，特别是秘密的文件，这种文件的复制通常由于所有者的安全而被禁止。 但是现有技术中的技术不能解决防止未授权再现的问题。 本发明的方法是通过安装在复印装置中的应用程序将遮蔽图案嵌入到防拷贝文件的原始图像之下，并且决定是否可以合法复制文档。 通过本发明的方法，可以准确而快速地检测防拷贝文件的水印信息，并且防止反复制文件的再现彻底。 此外，不需要额外的内存空间。

公开(公告)号：US20110296916A1

公开(公告)日：2011-12-08

申请号：US13015987

申请日：2011-01-28

Applicant: Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

Inventor： Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0848 ,  G01P2015/0854

Abstract: A accelerometer includes a substrate define a stationary electrode thereon, a first moveable mass defining a conductive-layer thereon facing the stationary electrode, a plurality of first elastic elements coupled with a peripheral side of the first moveable mass, a first fixed element surrounding the first moveable mass and fixedly attached to the substrate, a plurality of first fixed electrodes extending outwardly from the first fixed element, a second moveable mass surrounding the first fixed electrodes, a plurality of first moveable electrodes extending inwardly from the second moveable mass toward the first fixed to element and parallel to the first fixed electrodes, respectively, a plurality of second elastic elements coupled with a peripheral side of the second moveable mass, and a second fixed element surrounding the second moveable mass and fixedly attached to the substrate.

Abstract translation: 加速度计包括在其上限定固定电极的基板，限定其面向固定电极的导电层的第一可移动质量块，与第一可移动质量块的周边连接的多个第一弹性元件，围绕第一 可移动的质量并且固定地附接到基板，从第一固定元件向外延伸的多个第一固定电极，围绕第一固定电极的第二可移动质量;从第二可移动质量向内朝向第一固定 分别连接到第一固定电极的元件并且与第二可移动质量体的周边连接的多个第二弹性元件和围绕第二可移动块并固定地附接到基板的第二固定元件。

公开(公告)号：US20110284985A1

公开(公告)日：2011-11-24

申请号：US12783914

申请日：2010-05-20

Applicant: Yanxiang Liu ,  Bin Yang

Inventor： Yanxiang Liu ,  Bin Yang

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76229 ,  H01L21/76237

Abstract: A semiconductor device is formed with extended STI regions. Embodiments include implanting oxygen under STI trenches prior to filling the trenches with oxide and subsequently annealing. An embodiment includes forming a recess in a silicon substrate, implanting oxygen into the silicon substrate below the recess, filling the recess with an oxide, and annealing the oxygen implanted silicon. The annealed oxygen implanted silicon extends the STI region, thereby reducing leakage current between N+ diffusions and N-well and between P+ diffusions and P-well, without causing STI fill holes and other defects.

Abstract translation: 半导体器件形成有延伸的STI区域。 实施例包括在用氧化物填充沟槽并随后退火之前在STI沟槽下注入氧气。 一个实施例包括在硅衬底中形成凹槽，将氧注入到凹陷下方的硅衬底中，用氧化物填充凹槽，并对氧注入的硅进行退火。 退火的氧注入硅延伸STI区域，从而减少N +扩散与N阱之间以及P +扩散与P阱之间的漏电流，而不会引起STI填充孔和其他缺陷。

公开(公告)号：US20110254092A1

公开(公告)日：2011-10-20

申请号：US12759969

申请日：2010-04-14

Applicant: Bin Yang ,  Michael Hargrove

Inventor： Bin Yang ,  Michael Hargrove

IPC: H01L27/092 ,  H01L21/31

CPC classification number: H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/12 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78654

Abstract: A semiconductor is formed on an ETSOI layer, the thin Si layer of an ETSOI substrate, with enhanced channel stress. Embodiments include semiconductor devices having dual stress liners on the back surface of the ETSOI layer. An embodiment includes forming an ETSOI substrate comprising an extra thin layer of Si on a backside substrate with an insulating layer, e.g., a BOX, there between, forming a semiconductor device on the Si surface, removing the backside substrate, as by CMP and the insulting layer, as by wet etching, and forming a stress liner on the backside of the remaining Si layer opposite the semiconductor device. The use of stress liners on the backside of the ETSOI layer enhances channel stress without modifying ETSOI semiconductor process flow.

Abstract translation: 在ETSOI层，ETSOI衬底的薄Si层上形成半导体，具有增强的沟道应力。 实施例包括在ETSOI层的背面上具有双重应力衬垫的半导体器件。 一个实施例包括在背面基板上形成包括超薄Si层的ETSOI衬底，其上具有诸如BOX之间的绝缘层（例如BOX），在Si表面上形成半导体器件，通过CMP和 绝缘层，如通过湿蚀刻，并且在与半导体器件相对的剩余Si层的背面上形成应力衬垫。 在ETSOI层的背面使用应力衬垫增强了通道应力，而不改变ETSOI半导体工艺流程。

公开(公告)号：US20110147809A1

公开(公告)日：2011-06-23

申请号：US12644092

申请日：2009-12-22

Applicant: Bin Yang ,  Devendra Sadana ,  Christian Lavoie ,  Ahmet Ozcan

Inventor： Bin Yang ,  Devendra Sadana ,  Christian Lavoie ,  Ahmet Ozcan

IPC: H01L29/78 ,  H01L21/20 ,  H01L21/336

CPC classification number: H01L21/26506 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method includes forming a silicon germanium layer, forming a layer comprising carbon and silicon on a top surface of the silicon germanium layer, forming a metal layer above the layer comprising carbon and silicon, and performing a thermal treatment to convert at least the layer comprising carbon and silicon to form a metal silicide layer.

Abstract translation: 一种方法包括形成硅锗层，在硅锗层的顶表面上形成包含碳和硅的层，在包含碳和硅的层之上形成金属层，并进行热处理以至少将含有 碳和硅以形成金属硅化物层。

公开(公告)号：US07930559B1

公开(公告)日：2011-04-19

申请号：US11480346

申请日：2006-06-30

Applicant: Arthur Beaverson ,  Bin Yang ,  Jamie Pocas

Inventor： Arthur Beaverson ,  Bin Yang ,  Jamie Pocas

IPC: G06F11/28

CPC classification number: G06F17/30368 ,  G06F11/1448 ,  G06F11/1453 ,  G06F11/1456 ,  G06F11/1458 ,  G06F11/1461

Abstract: Described are techniques for storing data. A plurality of data portions and a corresponding token for each of the data portions are received. Each of said plurality of data portions is to be stored by one of a plurality of processes and each token has a corresponding token value. Each of the data portions is stored at a storage location on a device allocated for use by one of said plurality of processes. An entry is written in a log file in accordance with said storing of the data portion. The log file is a private log file of one of the plurality processes. An access structure used to access stored data portions is updated. The access structure is indexed by token values of the stored data portions. The updating of the access structure is performed in accordance with log entries from private log files of the plurality of processes.

Abstract translation: 描述了用于存储数据的技术。 接收用于每个数据部分的多个数据部分和相应的令牌。 所述多个数据部分中的每一个将通过多个进程中的一个进行存储，并且每个令牌具有对应的令牌值。 每个数据部分被存储在被分配供所述多个进程之一使用的设备上的存储位置处。 根据所述数据部分的存储，将条目写入日志文件。 日志文件是多个进程之一的专用日志文件。 用于访问存储的数据部分的访问结构被更新。 访问结构由存储的数据部分的令牌值索引。 根据多个进程的专用日志文件的日志条目执行访问结构的更新。

公开(公告)号：US20110076725A1

公开(公告)日：2011-03-31

申请号：US12962366

申请日：2010-12-07

Applicant: Bin Yang ,  Charles E. Wyman

Inventor： Bin Yang ,  Charles E. Wyman

IPC: C12P19/00 ,  C12P7/10

CPC classification number: C12P7/08 ,  C12P7/10 ,  C12P19/02 ,  Y02E50/16 ,  Y02E50/17

Abstract: Disclosed is a method for converting cellulose in a lignocellulosic biomass. The method provides for a lignin-blocking polypeptide and/or protein treatment of high lignin solids. The treatment enhances cellulase availability in cellulose conversion and allows for the determination of optimized pretreatment conditions. Additionally, ethanol yields from a Simultaneous Saccharification and Fermentation process are improved 5-25% by treatment with a lignin-blocking polypeptide and/or protein.

Abstract translation: 公开了一种在木质纤维素生物质中转化纤维素的方法。 该方法提供高木质素固体的木质素阻断多肽和/或蛋白质处理。 该处理增强纤维素转化中的纤维素酶可用性，并且允许确定优化的预处理条件。 此外，通过用木质素阻断多肽和/或蛋白质处理，来自同时糖化和发酵过程的乙醇产率提高了5-25％。