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    Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks
    142.
    发明授权
    Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks 有权
    形成记忆细胞的方法，以及构图含硫族化物的叠层的方法

    公开(公告)号：US09093641B2

    公开(公告)日：2015-07-28

    申请号：US13761609

    申请日：2013-02-07

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Jerome Imonigie

    IPC: H01L21/311 ,  H01L45/00

    CPC classification number: H01L45/1675 ,  H01L45/06 ,  H01L45/144

    Abstract: Some embodiments include methods of forming memory cells. Chalcogenide is formed over a plurality of bottom electrodes, and top electrode material is formed over the chalcogenide. Sacrificial material is formed over the top electrode material. A plurality of memory cell structures is formed by etching through the sacrificial material, top electrode material and chalcogenide. Each of the memory cell structures has a cap of the sacrificial material thereover. The etching forms polymeric residue over the sacrificial material caps, and damages chalcogenide along sidewalls of the structures. The sacrificial material is removed with an HF-containing solution, and such removes the polymeric residue off of the memory cell structures. After the sacrificial material is removed, the sidewalls of the structures are treated with one or both of H2O2 and HNO3 to remove damaged chalcogenide from the sidewalls of the memory cell structures.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 硫族化物形成在多个底部电极上，顶部电极材料形成在硫族化物上。 牺牲材料形成在顶部电极材料上。 通过蚀刻牺牲材料，顶电极材料和硫族化物来形成多个存储单元结构。 每个存储单元结构都具有其上的牺牲材料的盖。 蚀刻在牺牲材料盖上形成聚合物残余物，并且沿着结构的侧壁损坏硫属元素。 牺牲材料用含HF的溶液除去，这样将聚合物残留物从记忆电池结构中除去。 在去除牺牲材料之后，用H 2 O 2和HNO 3中的一种或两种处理结构的侧壁以从存储单元结构的侧壁去除损坏的硫族化物。

    MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME
    145.
    发明申请
    MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME 有权
    具有非线性光纤接触的存储单元及其操作和制造方法

    公开(公告)号：US20140264675A1

    公开(公告)日：2014-09-18

    申请号：US14290477

    申请日：2014-05-29

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Gurtej Sandhu

    IPC: H01L43/08

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

    Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

    Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

    Non-volatile memory with resistive access component
    146.
    发明授权
    Non-volatile memory with resistive access component 有权
    具有电阻性访问组件的非易失性存储器

    公开(公告)号：US08830738B2

    公开(公告)日：2014-09-09

    申请号：US13758644

    申请日：2013-02-04

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Michael P. Violette

    IPC: G11C11/00

    CPC classification number: H01L45/143 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1675

    Abstract: Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.

    Abstract translation: 一些实施例包括具有被配置为存储信息的存储器元件的设备和方法以及被配置为当存储元件和存取组件之间的第一方向上的第一电压差超过第一电压值时允许通过存储元件的电流的导通 并且当所述存储元件和所述存取组件之间的第二方向上的第二电压差超过第二电压值时，防止通过所述存储元件的电流传导，其中所述存取组件包括不包括硅的材料。

    Memory cells and methods of forming memory cells
    147.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US08822973B2

    公开(公告)日：2014-09-02

    申请号：US14180483

    申请日：2014-02-14

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu

    IPC: H01L45/00

    CPC classification number: H01L45/1253 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    Abstract: Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials.

    Abstract translation: 一些实施例包括包含夹在第一和第二电极之间的可编程材料的存储单元。 存储单元还可以包括直接抵靠电极之一并直接抵靠可编程材料的加热元件。 加热元件可以具有在约2纳米至约30纳米范围内的厚度，并且可以比电极更具有电阻性。 一些实施例包括形成存储单元的方法，其包括直接在电极和可编程材料之间的加热元件。

    Memory Cells and Methods of Forming Memory Cells
    148.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20140158972A1

    公开(公告)日：2014-06-12

    申请号：US14180483

    申请日：2014-02-14

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu

    IPC: H01L45/00

    CPC classification number: H01L45/1253 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    Abstract: Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials.

    Abstract translation: 一些实施例包括包含夹在第一和第二电极之间的可编程材料的存储单元。 存储单元还可以包括直接抵靠电极之一并直接抵靠可编程材料的加热元件。 加热元件可以具有在约2纳米至约30纳米范围内的厚度，并且可以比电极更具有电阻性。 一些实施例包括形成存储单元的方法，其包括直接在电极和可编程材料之间的加热元件。

    Integrated Circuitry Comprising Nonvolatile Memory Cells And Methods Of Forming A Nonvolatile Memory Cell
    150.
    发明申请
    Integrated Circuitry Comprising Nonvolatile Memory Cells And Methods Of Forming A Nonvolatile Memory Cell 有权
    包含非易失性存储单元的集成电路和形成非易失性存储单元的方法

    公开(公告)号：US20140057406A1

    公开(公告)日：2014-02-27

    申请号：US14066805

    申请日：2013-10-30

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  John K. Zahurak

    IPC: H01L45/00

    CPC classification number: H01L45/1266 ,  H01L21/28114 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/66621 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1691

    Abstract: An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of the first electrode. The first electrode extends laterally in a first direction and the ion conductive material extends in a second direction different from and intersecting the first direction. The first electrode is received directly against the ion conductive material only where the first and second directions intersect. Other embodiments, including method embodiments, are disclosed.

    Abstract translation: 集成电路具有包括第一电极，第二电极和离子导电材料的非易失性存储单元。 第一和第二电极中的至少一个具有直接接受离子导电材料接受的电化学活性表面。 第二电极位于第一电极的正上方。 第一电极在第一方向上横向延伸，并且离子导电材料沿与第一方向不同并与第一方向相交的第二方向延伸。 仅在第一和第二方向相交的情况下，第一电极直接接收在离子导电材料上。 公开了包括方法实施例的其它实施例。

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