Abstract:
An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.
Abstract:
A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.
Abstract:
A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched. The mixed gas includes the oxidation gas which oxidizes the metal element and forms an oxide, and the complexing gas which reacts with the oxide and forms an organometallic complex
Abstract:
An ion beam source that emits an ion beam in a direction of a substrate is provided. A cathode with a discharge opening defined therein is included. An anode is also included and spaced apart from the cathode. Ions are set to be emitted in an area proximate to the discharge opening in a direction similar to the direction from the anode to the discharge opening. First and second ceramic walls at least partially define a discharge channel between the anode and the cathode. At least one magnet generates a magnetic field in an area proximate to the discharge opening.
Abstract:
An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.
Abstract:
Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.
Abstract:
Disclosed are systems and methods for applying a voltage gradient to a gas delivery system, delivering a gas through a length of the gas delivery system having the voltage gradient, the gas having a pressure-distance product of less than about 1×10−2 Torr-inches or greater than about 100 Torr-inches, and delivering the gas into a housing of an ion microscope, the housing including an emitter and an extractor.
Abstract:
Provided are an ion generation target and a treatment apparatus using the same. The treatment apparatus includes an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape, a support supporting the bubble having the hemispheric shape, a bubble generation member for generating the bubble having the hemispheric shape on the support by using the ion generation material, and a laser radiating laser beam onto a surface of the bubble to generate ions from the ion generation material, thereby projecting the ions onto a tumor portion of a patient.
Abstract:
A system for producing a charged particle beam from a photoionized cold atom beam. A vapor of neutral atoms is generated. From these atoms, an atom beam having axial and transverse velocity distributions controlled by the application of laser light is produced. The produced atom beam is spatially compressed along each transverse axis, thus reducing the cross-sectional area of the produced beam and reducing a velocity spread of the produced beam along directions transverse to the beam's direction of propagation. Laser light is directed onto at least a portion of the neutral atoms in the atom beam, thereby producing ions and electrons. An electric field is generated at the location of the produced ions and electrons, thereby producing a beam of ions traveling in a first direction and electrons traveling in substantially the opposite direction. A vacuum chamber contains the atom beam, the ion beam and the electron beam.
Abstract:
A plasma source for processing or imaging a substrate, for ion source for proton therapy, for ion thrusters, or for high energy particle accelerators includes a coolant circuit passing adjacent to a plasma ion reactor chamber and RF antenna coils. In a method for operating the plasma ion source having an induction coil adjacent to a reaction chamber for inductively coupling power into the plasma from a radio frequency power source, the method comprises pumping a dielectric fluid into contact with induction coils of the plasma ion source along the coolant circuit. Use of the dielectric fluid both electrically insulates the plasma chamber, so that it can be biased to 30 kV and up, and efficiently transfers heat away from the plasma chamber.