公开(公告)号：US20200284401A1

公开(公告)日：2020-09-10

申请号：US16291679

申请日：2019-03-04

Applicant: OSRAM Opto Semiconductors GmbH ,  The Research Foundation for State University of New York

Inventor： Alan Lenef ,  David Klotzkin ,  Xin Wen

IPC: F21K9/68 ,  H01L33/60 ,  H01L33/50 ,  F21K9/64 ,  H01S5/022 ,  H01L33/48 ,  F21V7/26

Abstract: An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.

公开(公告)号：US20200255733A1

公开(公告)日：2020-08-13

申请号：US16270528

申请日：2019-02-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Weiwen Zhao ,  Juanita N. Kurtin ,  Joseph A. Treadway ,  Brian Theobald

IPC: C09K11/88 ,  H01L33/50 ,  C09K11/02

Abstract: A method for fabricating a connected network of oxide-coated semiconductor structure, comprising: preparing a first solution comprising a nanocrystalline material and a first solvent; preparing a second solution comprising a surfactant and a second solvent; adding the first solution and a bifunctional linker to the second solution, thereby preparing a third solution; adding a catalyst, water and a silicate to the third solution; thereby preparing a connected network of oxide-coated semiconductor structure; wherein the ratio of the water to surfactant is more than 3.5. Furthermore, an oxide-coated semiconductor structure and a light source comprising an oxide-coated semiconductor structure are described herein.

公开(公告)号：US20200235269A1

公开(公告)日：2020-07-23

申请号：US16647782

申请日：2018-04-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mohd Fauzi Zainordin ,  Khairul Mohd Arshad ,  Sok Gek Beh ,  Jun Jun Lim

IPC: H01L33/58 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62

Abstract: An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a housing body, an optical element and a rabbet comprising a shoulder and a cheek, wherein the rabbet is located on an upper side of the housing body, wherein the optical element is located in the rabbet such that a brim of the optical element rests on the shoulder of the rabbet, wherein the upper side of the housing body comprises a rectangular shape, and wherein the shoulder of the rabbet is located only at corners of the rabbet.

公开(公告)号：US20200212024A1

公开(公告)日：2020-07-02

申请号：US16608356

申请日：2018-04-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Claus Jaeger ,  Stephan Haslbeck

IPC: H01L25/16 ,  H01L31/0203 ,  H01L31/0232 ,  H01L33/48 ,  H01L33/58

Abstract: An optoelectronic component and an assembly with an optoectronic component are disclosed. In an embodiment an optoelectronic component includes an optical element with an outer surface and an inner surface that faces away from the outer surface, wherein the inner surface includes a first region of the optical element, in which the inner surface is flat, wherein the inner surface includes a second region of the optical element, wherein the second region adjoins the first region, and wherein the inner surface includes a third region of the optical element, in which the inner surface extends from the second region in the direction of a housing.

公开(公告)号：US20200168767A1

公开(公告)日：2020-05-28

申请号：US16615835

申请日：2018-05-17

Applicant: Osram Opto Semiconductors GmbH

Inventor： Isabel OTTO ,  Anna KASPRZAK-ZABLOCKA ,  Christian LEIRER ,  Berthold HAHN

IPC: H01L33/38 ,  H01L31/0216 ,  H01L31/0224 ,  H01L33/40 ,  H01L33/00 ,  H01L33/32

Abstract: A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

公开(公告)号：US10665760B2

公开(公告)日：2020-05-26

申请号：US15816924

申请日：2017-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Alexander Behres ,  Darshan Kundaliya

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/08

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

公开(公告)号：US20200161377A1

公开(公告)日：2020-05-21

申请号：US16194238

申请日：2018-11-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Anant Aggarwal ,  Alireza Safaee

IPC: H01L27/32 ,  H01L27/15 ,  G09G3/3216 ,  G09G3/3283

Abstract: A display, a circuit arrangement for a display and a method of operating a display are disclosed. In an embodiment a display includes a voltage supply and a plurality of pixels. Each pixel includes a given number of light emitters, the light emitters being arranged in parallel electric lines with a light emitter per electric line, wherein the voltage supply is adapted to provide an electric voltage to each of the parallel electric lines. Each electric line comprises a current control element, wherein the current control element of an electric line is configured to control an electric current flowing through the light emitter arranged in the electric line.

公开(公告)号：US20200152568A1

公开(公告)日：2020-05-14

申请号：US16615839

申请日：2018-05-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Dominik Scholz ,  Christian Leirer

IPC: H01L23/528 ,  H01L23/532

Abstract: A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.

公开(公告)号：US10608413B2

公开(公告)日：2020-03-31

申请号：US16099644

申请日：2017-04-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/40 ,  H01S5/042 ,  H01S5/068 ,  H01S5/0683

Abstract: The invention relates to a laser assembly, wherein, in one embodiment, the laser assembly (1) comprises a plurality of laser groups (2) each having at least one semiconductor laser (20). Furthermore, the laser assembly (1) contains a plurality of photothyristors (3), each laser group (2) being clearly assigned one of the photothyristors (3). The photothyristors (3) are each connected electrically in series with the associated laser group (2) and/or integrated in the associated laser group (2). Furthermore, the photothyristors (3) are each optically coupled to the associated laser group (2). A dark breakdown voltage (Ut) of each photothyristor (3) lies above an intended operating voltage (Ub) of the associated laser group (2).

公开(公告)号：US10597512B2

公开(公告)日：2020-03-24

申请号：US15565116

申请日：2016-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Klaus Höhn ,  Kathy Schmidtke ,  Christina Keith

IPC: H01L33/00 ,  C08K5/05 ,  H01L33/56 ,  C08L83/04 ,  C08K5/02 ,  C08L83/00 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/024 ,  H01L33/58 ,  H01L33/64

Abstract: An optoelectronic device with a mixture including silicone and a fluoro-organic additive is disclosed. In an embodiment the device includes at least one radiation-emitting or radiation-detecting semiconductor and a mixture including silicone and a fluoro-organic additive. The mixture may be a component of at least one of the following elements: a package body element surrounding the at least one semiconductor at least in places, a radiation-guiding element arranged in a beam path of a radiation emitted by the semiconductor or detected by the semiconductor, a heat-conducting element configured to conduct heat emitted by the semiconductor or received by the semiconductor, or an adhesive element.