公开(公告)号：US10886140B2

公开(公告)日：2021-01-05

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US10790139B2

公开(公告)日：2020-09-29

申请号：US15112737

申请日：2015-01-05

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/452 ,  C23C16/505 ,  C23C16/56 ,  C23C16/40 ,  C23C16/02 ,  H01J37/32

Abstract: A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a silicon dioxide bulk layer that is formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds prior to or after the deposition of the bulk layer.

公开(公告)号：US10607841B2

公开(公告)日：2020-03-31

申请号：US16220816

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US20200035505A1

公开(公告)日：2020-01-30

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US20200035486A1

公开(公告)日：2020-01-30

申请号：US16590734

申请日：2019-10-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US20200027726A1

公开(公告)日：2020-01-23

申请号：US16511081

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.

公开(公告)号：US10529568B2

公开(公告)日：2020-01-07

申请号：US15406116

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

公开(公告)号：US20190385851A1

公开(公告)日：2019-12-19

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： SRINIVAS GANDIKOTA ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US10510589B2

公开(公告)日：2019-12-17

申请号：US15991376

申请日：2018-05-29

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3215 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/324

Abstract: Methods for seam and void-free gapfilling, such as gapfilling high aspect ratio trenches with amorphous silicon, are provided. A method generally includes depositing amorphous silicon over a semiconductor device having one or more features thereon, annealing the deposited amorphous silicon to heal one or more seams in the deposited amorphous silicon between the one or more features, and etching the annealed amorphous silicon to remove one or more voids in the annealed amorphous silicon between the one or more features. The deposition, anneal, and etch processes are generally repeated any suitable number of times to achieve amorphous silicon gapfill without any seam or void between the one or more features.

公开(公告)号：US10510546B2

公开(公告)日：2019-12-17

申请号：US16429573

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/285 ,  H01L21/321 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.