公开(公告)号：US20110221015A1

公开(公告)日：2011-09-15

申请号：US13045040

申请日：2011-03-10

Applicant: Frederic-Xavier Gaillard ,  Fabrice Nemouchi

Inventor： Frederic-Xavier Gaillard ,  Fabrice Nemouchi

IPC: H01L29/84 ,  H01L21/301 ,  H01L29/06

CPC classification number: B81C1/00476 ,  B81C2201/0115

Abstract: A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer.

Abstract translation: 公开了一种释放机电微系统的可移动机械部件的生产方法。 该方法的特征在于，多孔区形成在半导体材料的第一水的前表面上。 然后，能够构成机电微系统的可移动机械部件的材料的图案形成在多孔区域的水平面上的第一水的前表面上并封装在牺牲层中。 然后沉积受到牺牲层的溶剂侵蚀的材料层。 然后，使用牺牲层的溶剂，通过多孔区，通过第一水的后表面执行可移动机械部件的释放。

公开(公告)号：US20110147864A1

公开(公告)日：2011-06-23

申请号：US12737037

申请日：2009-04-21

Applicant: Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

Inventor： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

IPC: H01L21/302 ,  H01L29/84

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Abstract translation: 用于制造从衬底的后部进入的微机械膜结构的方法包括：n掺杂p掺杂硅衬底表面的至少一个连续的格子型区域; 在n掺杂的晶格结构下面蚀刻衬底区域; 在该n型掺杂晶格结构下面的该衬底区域中产生空腔; 在n掺杂晶格结构上生长第一单晶硅外延层; n掺杂晶格结构中的至少一个开口的尺寸设计成使得其不被生长的第一外延层闭合​​，而是形成到腔的通路口; 在空腔壁上形成氧化物层; 产生到空腔的后部通路，空腔壁上的氧化层用作蚀刻停止层; 并且在空腔的区域中去除氧化物层。

公开(公告)号：US07944603B2

公开(公告)日：2011-05-17

申请号：US12119712

申请日：2008-05-13

Applicant: Teruo Sasagawa ,  Lior Kogut

Inventor： Teruo Sasagawa ,  Lior Kogut

IPC: G02B26/00

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器，其包括具有第一表面的透明电极; 以及具有面向第一表面的第二表面的可移动反射电极。 可移动反射电极可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面的氧化铝层。 处于致动位置的多孔表面减小了电极之间的接触面积，从而减小了静电。

公开(公告)号：US07833405B2

公开(公告)日：2010-11-16

申请号：US10450362

申请日：2001-12-13

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

IPC: B23H3/00 ,  C23F1/00 ,  B31D3/00 ,  C03C25/68 ,  H01L21/00

CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.

Abstract translation: 描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。

公开(公告)号：US07777285B2

公开(公告)日：2010-08-17

申请号：US11683785

申请日：2007-03-08

Applicant: Giuseppe D'Arrigo ,  Rosario Corrado Spinella

Inventor： Giuseppe D'Arrigo ,  Rosario Corrado Spinella

IPC: H01L31/058

CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81C2201/0115

Abstract: A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer.

Abstract translation: 提供了一种用于制造包括悬浮微系统的半导体器件的方法。 根据该方法，在硅衬底上形成硅多孔层，并且硅多孔层被氧化。 沉积氧化物层，并且在氧化物层上方沉积第一多晶硅层。 选择性地去除第一多晶硅层，氧化物层和硅多孔层。 沉积氮化物层，沉积第二多晶硅层。 选择性地除去第二多晶硅层，氮化物层，第一多晶硅层和氧化物层。 在通过前一步骤可访问的区域中去除硅多孔层。 还提供了一种半导体器件，其包括通过多个铰链固定到至少两个壁的悬置结构，其中悬浮结构包括氧化物层，第一多晶硅层，氮化物层和第二多晶硅层。

公开(公告)号：US20100171189A1

公开(公告)日：2010-07-08

申请号：US12652715

申请日：2010-01-05

Applicant: Chien-Hung Liu

Inventor： Chien-Hung Liu

IPC: H01L29/84 ,  H01L21/50

CPC classification number: B81C1/00325 ,  B81B2207/092 ,  B81B2207/097 ,  B81C1/00301 ,  B81C2201/0115 ,  B81C2203/0118 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/93 ,  H01L2221/68304 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/11009 ,  H01L2224/11019 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/93 ,  H01L2924/0001 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15788 ,  H01L2224/0231 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2924/00

Abstract: The invention provides an electronic device package and fabrication method thereof. The electronic device package includes a sensor chip. An upper surface of the sensor chip comprises a sensing film. A covering plate having an opening structure covers the upper surface of the sensor chip. A cavity is between the covering plate and the sensor chip, corresponding to a position of the sensing film, where the cavity communicates with the opening structure. A spacer is between the covering plate and the sensor chip, surrounding the cavity. A pressure releasing region is between the spacer and the sensing film.

Abstract translation: 本发明提供一种电子器件封装及其制造方法。 电子装置封装包括传感器芯片。 传感器芯片的上表面包括感测膜。 具有开口结构的覆盖板覆盖传感器芯片的上表面。 覆盖板和传感器芯片之间的腔体对应于感测膜的位置，其中空腔与开口结构连通。 间隔件位于覆盖板和传感器芯片之间，围绕腔体。 压力释放区域位于间隔件和感测膜之间。

公开(公告)号：US20100029031A1

公开(公告)日：2010-02-04

申请号：US12488898

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/18

CPC classification number: B81C1/00507 ,  B81B2201/0271 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0177 ,  B81C2203/0136 ,  B81C2203/0145 ,  H03H3/0072 ,  H03H9/175 ,  H03H9/2436 ,  Y10S438/933

Abstract: The invention relates to a method of fabricating and electromechanical device on at least one substrate, the device including at least one active element and wherein the method comprises: a) making a heterogeneous substrate comprising a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between a said cavity and said interface layer; and wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.

Abstract translation: 本发明涉及在至少一个基板上制造和机电装置的方法，所述装置包括至少一个有源元件，并且其中所述方法包括：a）制造包含第一部分，界面层和第二部分 ，所述第一部分包括被夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，所述第一区域延伸到所述第一部分的表面，并且所述第二区域延伸到所述界面层，所述第二区域延伸至所述界面层， 区域至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地被破坏; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述空腔和所述界面层之间的所述第二区域的至少一部分; 并且其中所述基底的第一和第二部分分别由通过粘合而组装在一起的第一和第二基底构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

公开(公告)号：US20090317931A1

公开(公告)日：2009-12-24

申请号：US12488882

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L29/84

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Abstract translation: 本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。

公开(公告)号：US07585743B2

公开(公告)日：2009-09-08

申请号：US11724841

申请日：2007-03-16

Applicant: Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

Inventor： Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

IPC: H01L21/76 ,  H01L21/20 ,  H01L21/36

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

Abstract translation: 描述了一种用于制造第一浓缩型半导体衬底的方法，至少包括掩埋绝缘腔，包括以下步骤：在半导体衬底上形成多个沟槽，在半导体衬底上形成表面层，以便 在表面上紧密地闭合形成与沟槽的表面 - 远端相对应的至少一个掩埋腔的多个沟槽。

公开(公告)号：US07572661B2

公开(公告)日：2009-08-11

申请号：US11223637

申请日：2005-09-08

Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L21/00

CPC classification number: B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

Abstract translation: 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。