公开(公告)号：US20110316120A1

公开(公告)日：2011-12-29

申请号：US13228041

申请日：2011-09-08

Applicant: John A. ROGERS ,  Ralph G. NUZZO ,  Matthew MEITL ,  Heung Cho KO ,  Jongseung YOON ,  Etienne MENARD ,  Alfred J. BACA

Inventor： John A. ROGERS ,  Ralph G. NUZZO ,  Matthew MEITL ,  Heung Cho KO ,  Jongseung YOON ,  Etienne MENARD ,  Alfred J. BACA

IPC: H01L29/20 ,  B32B38/10

CPC classification number: H01L31/0735 ,  B81C1/0046 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/6835 ,  H01L21/7813 ,  H01L29/155 ,  H01L29/20 ,  H01L31/03046 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/184 ,  H01L31/1844 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2224/95001 ,  H01L2924/0002 ,  H01L2924/13091 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T156/1195 ,  H01L2924/00

Abstract: Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Abstract translation: 提供了通过提供具有多个功能层和多个释放层的多层结构来制造器件或器件部件的方法，并且通过分离一个或多个释放层从多层结构释放功能层以产生多个 可转让结构。 可转移结构被印刷到由器件衬底支撑的器件衬底或器件部件上。 该方法和系统提供制造高质量和低成本的光伏器件，可转移的半导体结构（光电）器件和器件部件的手段。

公开(公告)号：US08076169B2

公开(公告)日：2011-12-13

申请号：US12488882

申请日：2009-06-22

Applicant: Francois Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： Francois Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/00

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Abstract translation: 本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。

公开(公告)号：US20110151620A1

公开(公告)日：2011-06-23

申请号：US12736721

申请日：2008-12-02

Applicant: Torsten Kramer ,  Matthias Boehringer ,  Stefan Pinter ,  Hubert Benzel ,  Matthias Illing ,  Frieder Haag ,  Simon Armbruster

Inventor： Torsten Kramer ,  Matthias Boehringer ,  Stefan Pinter ,  Hubert Benzel ,  Matthias Illing ,  Frieder Haag ,  Simon Armbruster

IPC: H01L21/50

CPC classification number: H01L25/50 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L21/02002 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/05599 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941

Abstract: A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the chip (1, 2), the diaphragm (11, 12) is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip (1, 2) in an electroplating process before the chip is separated.

Abstract translation: 一种制造芯片（1,2）的方法，其中在跨越空腔（13）的半导体衬底（10）的表面层中产生至少一个隔膜（11,12）。 然后将芯片（1,2）的功能集成到隔膜（11,12）中。 为了分离芯片（1,2），隔膜（11,12）与基片复合体分离。 根据本发明的方法的特征在于在芯片分离之前在电镀工艺中对芯片（1,2）的背面进行金属电镀。

公开(公告)号：US07932123B2

公开(公告)日：2011-04-26

申请号：US11858788

申请日：2007-09-20

Applicant: John A. Rogers ,  Ralph G. Nuzzo ,  Matthew Meitl ,  Heung Cho Ko ,  Jongseung Yoon ,  Etienne Menard ,  Alfred J. Baca

Inventor： John A. Rogers ,  Ralph G. Nuzzo ,  Matthew Meitl ,  Heung Cho Ko ,  Jongseung Yoon ,  Etienne Menard ,  Alfred J. Baca

IPC: H01L21/00 ,  H01L21/31

CPC classification number: H01L31/0735 ,  B81C1/0046 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/7813 ,  H01L29/155 ,  H01L29/20 ,  H01L31/03046 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/184 ,  H01L31/1844 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T156/1195 ,  H01L2924/00

Abstract: Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Abstract translation: 提供了通过提供具有多个功能层和多个释放层的多层结构来制造器件或器件部件的方法，并且通过分离一个或多个释放层从多层结构释放功能层以产生多个 可转让结构。 可转移结构被印刷到由器件衬底支撑的器件衬底或器件部件上。 该方法和系统提供制造高质量和低成本的光伏器件，可转移的半导体结构（光电）器件和器件部件的手段。

公开(公告)号：US20100330506A1

公开(公告)日：2010-12-30

申请号：US12669933

申请日：2008-07-18

Applicant: Roy Knechtel

Inventor： Roy Knechtel

IPC: G03F7/20

CPC classification number: B81C1/0038 ,  B81B2203/0315 ,  B81C2201/0191 ,  H01L21/2007

Abstract: For bonding a donor wafer (1) and a system wafer (9) an edge bead (3) of an epitaxial layer (2) on the donor wafer is flattened or completely removed by etching so that a reliable contact after bonding up to the edge region (5, 6) is possible. The etching mask is produced by means of a resist layer (4) as well as by means of removal of resist at the edge, free exposure and developing without a special photomask.

Abstract translation: 为了接合供体晶片（1）和系统晶片（9），施主晶片上的外延层（2）的边缘（3）被平坦化或通过蚀刻完全去除，使得在结合到边缘之后的可靠接触 区域（5,6）是可能的。 蚀刻掩模通过抗蚀剂层（4）以及通过在边缘处去除抗蚀剂而产生，在没有特殊光掩模的情况下自由曝光和显影。

公开(公告)号：US07846818B2

公开(公告)日：2010-12-07

申请号：US12218149

申请日：2008-07-10

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US20100282323A1

公开(公告)日：2010-11-11

申请号：US12789361

申请日：2010-05-27

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L31/0392 ,  H01L31/18

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20090317931A1

公开(公告)日：2009-12-24

申请号：US12488882

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L29/84

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Abstract translation: 本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。

公开(公告)号：US20090093103A1

公开(公告)日：2009-04-09

申请号：US12316172

申请日：2008-12-09

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/762 ,  H01L21/302

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US07470600B2

公开(公告)日：2008-12-30

申请号：US11842104

申请日：2007-08-20

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/67092 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。