公开(公告)号：US20060238953A1

公开(公告)日：2006-10-26

申请号：US11115951

申请日：2005-04-26

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

IPC: H01T23/00

CPC classification number: H01L21/68742 ,  H01L21/6831

Abstract: A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

Abstract translation: 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小力检测器感测由提升销施加的力足够大以指示夹紧晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内 晶圆。

公开(公告)号：US20050214477A1

公开(公告)日：2005-09-29

申请号：US10873485

申请日：2004-06-22

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/452 ,  C23C16/517

CPC classification number: C23C16/452 ,  C23C16/402 ,  C23C16/517

Abstract: A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.

Abstract translation: 在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口 离子淋浴网格的表面。 工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。 配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力 发生区域至少是过程区域压力的几倍。 通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格 以从等离子体中产生离子通过网格并进入过程区域。

公开(公告)号：US20050211546A1

公开(公告)日：2005-09-29

申请号：US10873602

申请日：2004-06-22

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: C23C14/34 ,  C23C14/35 ,  C23C16/04 ,  C23C16/507 ,  H01J37/32

CPC classification number: C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357 ,  H01J37/32449

Abstract: A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma from deposition precursor species sputtered from the target, applying a grid potential to the ion shower grid to create a flux of ions through the grid, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.

Abstract translation: 反应性溅射沉积工艺在具有将腔室分成上离子产生区域和较低工艺区域的离子喷淋栅格的反应室中进行，离子喷淋栅格具有相对于 离子淋浴网格的表面。 工件被放置在处理区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。 该方法包括从离子产生区域中包含半导体物质的溅射靶溅射沉积前体物质，将RF等离子体源功率施加到离子产生区域，以便从沉淀前体物质溅射出靶，产生栅电位 到离子淋浴网格以产生通过栅格的离子通量，并且将气体物质提供到反应器室中以与半导体原子组合以形成沉积在工件表面上的分子。

公开(公告)号：US06893907B2

公开(公告)日：2005-05-17

申请号：US10786410

申请日：2004-02-24

Applicant: Dan Maydan ,  Randir P. S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Dan Maydan ,  Randir P. S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01J37/32 ,  H01L21/00

CPC classification number: H01J37/321 ,  H01J2237/0825 ,  Y10S438/977

Abstract: A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

Abstract translation: 在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压， 将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心 并且在硅表面层中具有有限的氧浓度。 然后减小硅表面层中的氧浓度以允许外延硅沉积。

公开(公告)号：US20050051272A1

公开(公告)日：2005-03-10

申请号：US10646467

申请日：2003-08-22

Applicant: Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

Inventor： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC: H01J37/32 ,  C23F1/00

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.

Abstract translation: 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域， 以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。 该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

公开(公告)号：US06642489B2

公开(公告)日：2003-11-04

申请号：US09758000

申请日：2001-01-09

Applicant: Kartik Ramaswamy ,  Dennis S. Grimard ,  Philip M. Salzman ,  Liang-Guo Wang ,  Kwok Manus Wong

Inventor： Kartik Ramaswamy ,  Dennis S. Grimard ,  Philip M. Salzman ,  Liang-Guo Wang ,  Kwok Manus Wong

IPC: H05B610

CPC classification number: H01L21/67098

Abstract: A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.

Abstract translation: 导管具有设置在其中的加热系统。 加热系统响应于由感应线圈产生的磁通而产生热量。 加热系统具有传热元件和多个铁磁元件。 传热元件可以在导管内移位以控制产生的热量。

公开(公告)号：US06494986B1

公开(公告)日：2002-12-17

申请号：US09636435

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC: H05H100

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second pairs of openings therethrough near generally opposite sides of the workpiece support. At least first and second hollow conduits are connected to respective pairs of the openings to provide at least first and second closed torroidal paths through the respective conduits and extending between respective pairs of the openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal paths. Coil antennas are coupled to RF power sources and inductively coupled to the interior of the hollow conduits and capable of maintaining a plasma in the torroidal paths.

Abstract translation: 一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的面向所述外壳的上部的工件支撑件，所述外壳具有穿过所述工件支撑件的大体相对侧的至少第一和第二对开口 。 至少第一和第二空心管道连接到相应的一对开口，以提供至少第一和第二封闭的环形路径穿过相应的导管并且在相应的成对开口之间跨越晶片表面延伸。 工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。 线圈天线​​耦合到RF功率源，并且感应耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

公开(公告)号：US06468388B1

公开(公告)日：2002-10-22

申请号：US09636434

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC: H01L2100

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween. A hollow conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of the conduit sharing the interior environment. The conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.

Abstract translation: 限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布 板和衬底支撑件限定其间的衬底处理区域。 中空导管，其各自的端部通向气体分配板的相对侧的基板处理区域，导管的内部共享内部环境。 所述管道适于接受RF管道内的处理气体的RF场辐射，以在围绕管道内部延伸并且在腔室内部环境内的衬底处理区域周围延伸的路径中维持等离子体。

公开(公告)号：US06391146B1

公开(公告)日：2002-05-21

申请号：US09547423

申请日：2000-04-11

Applicant: Ashish Bhatnagar ,  Kartik Ramaswamy ,  Tony S. Kaushal ,  Kwok Manus Wong ,  Shamouil Shamouilian

Inventor： Ashish Bhatnagar ,  Kartik Ramaswamy ,  Tony S. Kaushal ,  Kwok Manus Wong ,  Shamouil Shamouilian

IPC: H05H100

CPC classification number: C23C16/4412 ,  B01D53/34 ,  B01D53/70

Abstract: An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion resistant inner surface 280. Optionally, an additive gas source 230 may be provided to introduce additive gas into the gas energizing reactor 210. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.

Abstract translation: 用于减少从处理室25排出的有害气体的装置和方法包括具有带有耐腐蚀内表面280的气体激励反应器210的废气处理系统200.任选地，可以提供添加气体源230以将添加气体引入 气体通电反应器210.在一个实施方案中，内表面包含含氟化合物。 在另一个实施方案中，内表面包含氧化物和稳定剂。

公开(公告)号：US09338871B2

公开(公告)日：2016-05-10

申请号：US12905624

申请日：2010-10-15

Applicant: Chetan Mahadeswaraswamy ,  Walter R. Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Tina Tsong ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr. ,  Fernando M. Silveira ,  Brad L. Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

Inventor： Chetan Mahadeswaraswamy ,  Walter R. Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Tina Tsong ,  Shane C. Nevil ,  Douglas A. Buchberger, Jr. ,  Fernando M. Silveira ,  Brad L. Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

IPC: G01L21/30 ,  G01R31/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/306 ,  C23F1/00 ,  H05H1/00 ,  H01J37/32

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。