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公开(公告)号：US20230124884A1
公开(公告)日：2023-04-20
申请号：US17747901
申请日：2022-05-18
Applicant: SEMES CO., LTD.
Inventor： Wan Hee JEONG , Kuk Saeng KIM , Jun Hyeak CHOI
IPC: H01L21/687
Abstract: A substrate lifting apparatus and a substrate processing apparatus for reducing deformation due to heat are provided. The substrate lifting apparatus comprises a plurality of pins in contact with a substrate, an upper plate for supporting the plurality of pins and having a plurality of upper connecting portions formed on a lower surface, a lower plate having a plurality of lower connecting portions connected to the plurality of upper connecting portions formed on an upper surface and disposed under the upper plate, and a driving unit for driving the plurality of pins to move up and down, wherein the lower plate supports a plurality of bushes and a plurality of shafts passing through the plurality of bushes on an upper surface thereof.
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162.发明申请公开(公告)号：US20230118197A1
公开(公告)日：2023-04-20
申请号：US17960394
申请日：2022-10-05
Applicant: SEMES CO., LTD.
Inventor： Cheon Su CHO
Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a head unit configured to discharge an ink to a substrate; a supply unit configured to supply the ink to the head unit and including a reservoir having an inner space; and a pressure adjusting unit configured to adjust a pressure of the inner space, and wherein the pressure adjusting unit comprises: a first pressure adjusting unit; and a second pressure adjusting unit in which a size for changing a pressure of the inner space per unit time is greater than the first pressure adjusting unit.
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公开(公告)号：US20230114015A1
公开(公告)日：2023-04-13
申请号：US17942136
申请日：2022-09-10
Applicant: SEMES CO., LTD.
Inventor： Bo Ramchan SUNG , Eon Seok LEE
Abstract: The present disclosure provides a substrate treating apparatus capable of stably moving a substrate and discharging an ink at an accurate position. The substrate treating apparatus of the present disclosure comprises: a stage extending in a first direction and moving a substrate along the first direction; moving units disposed on both sides of the stage extending in the first direction, respectively, and configured to move the substrate in the first direction; and a control unit configured to align the substrate, wherein the moving unit includes a first gripper and a second gripper configured to adsorb one side and the other side of the substrate, respectively, after the first gripper adsorbs one side of the substrate, the control unit aligns the substrate, and after the substrate is aligned, the second gripper adsorbs the other side of the substrate and the substrate is moved in the first direction.
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公开(公告)号：US20230100773A1
公开(公告)日：2023-03-30
申请号：US17946153
申请日：2022-09-16
Applicant: SEMES CO., LTD.
Inventor： Gi Hun CHOI , Young Joon HAN
Abstract: The substrate treating apparatus includes a liquid supply unit for supplying a treating liquid to a substrate supported by a support unit, the liquid supply unit includes a nozzle member for discharging the treating liquid; and a driving member for moving the nozzle member to a standby position and a process position, the nozzle member includes a body having a buffer space and a discharge port configured to discharge the treating liquid; and a rotation member for changing the body between a first state and a second state by a rotation, the first state is a state at which a treating liquid filled in the buffer space is maintained so the treating liquid does not flow to the discharge port, and the second state is a state at which the treating liquid filled in the buffer space is discharged to an outside of the body through the discharge port.
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公开(公告)号：US11615969B2
公开(公告)日：2023-03-28
申请号：US16896539
申请日：2020-06-09
Applicant: SEMES CO., LTD.
Inventor： Daesung Kim , Eunwoo Park
Abstract: The apparatus includes a plurality of process chambers having treatment spaces configured to process the substrate in the treatment spaces, and an exhaust unit to exhaust gas from the treatment space. The exhaust unit includes a plurality of individual exhaust pipes directly connected to the treatment spaces in one process chamber or the plurality of process chambers, a main exhaust pipe connected to the plurality of individual exhaust pipes, a pressure reducing member installed in the main exhaust pipe to reduce pressure of the treatment space, and a damper member mounted in each of the individual exhaust pipes to adjust an amount of gas exhausted through the individual exhaust pipe. The damper member includes a first damper to adjust an amount of gas exhausted from the treatment spaces, and a second damper disposed downstream of the first damper to buffer a pressure change caused by adjusting the first damper.
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Patent Agency Ranking
公开(公告)号：US20230084076A1
公开(公告)日：2023-03-16
申请号：US17943452
申请日：2022-09-13
Applicant: SEMES CO., LTD.
Inventor： Hyun YOON , Ki Hoon CHOI , Tae Hee KIM , Hyo Won YANG , Young Dae CHUNG , Ji Hoon JEONG
IPC: H01L21/268 , H01L21/67 , G03F1/70
Abstract: The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern, the moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, and wherein when a treating position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is positioned at the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the treating position, positioned at the third quadrant in a direction which is perpendicular to the fourth quadrant, and positioned at the second quadrant in a direction which is perpendicular to the first quadrant, and wherein the controller controls a rotation of the support unit so the second pattern is positioned at the fourth quadrant.
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公开(公告)号：US20230072779A1
公开(公告)日：2023-03-09
申请号：US17900761
申请日：2022-08-31
Applicant: SEMES CO., LTD.
Inventor： Young Jun SON , Byoung Doo CHOI , Sung Chul JUNG , Woo Sin JUNG , Young Un YUN , Woo Ram LEE , Ki Sang EUM
IPC: F04B45/06
Abstract: Provided is a pump for supplying a liquid. The pump includes: a tube including a pump chamber communicating with a chemical liquid inlet and a chemical liquid outlet, and configured to discharge a chemical liquid through a change in volume due to contraction and expansion; and a driving unit contracting or expanding the tube in a longitudinal direction, in which the tube includes: a flexible tube body including a pump chamber which has an increased internal volume when is contracted in a longitudinal direction and has a decreased internal volume when is expanded in the longitudinal direction, and which has a jar shape of which a radius is increased from the chemical liquid inlet to a center of the pump chamber, and the radius is decreased from the pump chamber to the chemical liquid outlet; a first flange provided at one end of the tube body and including the chemical liquid inlet; and a second flange provided at the other end of the tube body and including the chemical liquid outlet.
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公开(公告)号：US20230071737A1
公开(公告)日：2023-03-09
申请号：US17901904
申请日：2022-09-02
Applicant: SEMES CO., LTD.
Inventor： Myung Chan CHO
Abstract: Provided is a substrate treating method. The substrate treating method includes: a first supercritical processing operation of loading a first substrate into a supercritical chamber and supercritically processing the first substrate in the supercritical chamber; a resting operation of maintaining the supercritical chamber in an empty state for a first time until a temperature in the supercritical chamber becomes a preset temperature by opening the supercritical chamber after the first substrate is unloaded from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and supercritically processing the second substrate in the supercritical chamber.
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公开(公告)号：US20230071392A1
公开(公告)日：2023-03-09
申请号：US17738010
申请日：2022-05-06
Applicant: SEMES CO., LTD.
Inventor： Sung Hun EOM , Sung Ho LEE , Ju Yong JANG
Abstract: Provided is a substrate treatment apparatus with improved workability. The substrate treatment apparatus includes: a first bath storing a cleaning solution and having a first opening formed in an upper surface thereof; and a first ultrasonic oscillator installed in the first bath and providing ultrasonic waves toward a surface of the cleaning solution exposed by the first opening to form a water film protruding from the surface of the cleaning solution, wherein a substrate is not immersed in the first bath, and a surface of the substrate is placed adjacent to the first opening and cleaned by the water film.
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公开(公告)号：US20230070679A1
公开(公告)日：2023-03-09
申请号：US17895266
申请日：2022-08-25
Applicant: SEMES CO., LTD.
Inventor： Tae Dong PARK , Chung Woo LEE
Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space; and a support unit configured to support and heat a substrate in the treating space, and wherein the support unit includes: at least one heating element for adjusting a temperature of the substrate; a power source for generating a power applied to at least one heating element; a power supply line for transmitting the power generated by the power source to the at least one heating element; a power return line for grounding the at least one heating element; and a current measuring resistor provided on the power supply line or the power return line and used for estimating a temperature of the at least one heating element.
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