公开(公告)号：US20100246628A1

公开(公告)日：2010-09-30

申请号：US12729636

申请日：2010-03-23

Applicant: Yasushi HATTORI ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

Inventor： Yasushi HATTORI ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

IPC: H01S5/026

CPC classification number: H01S5/02296 ,  H01S5/005 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/02216 ,  H01S5/0228 ,  H01S5/32341 ,  H01S5/327

Abstract: Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.

Abstract translation: 公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极 所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上， 可见光发射器与封装件接触。

公开(公告)号：US20100178721A1

公开(公告)日：2010-07-15

申请号：US12539275

申请日：2009-08-11

Applicant: Shinji SAITO ,  Shinya Nunoue ,  Toshiyuki Oka

Inventor： Shinji SAITO ,  Shinya Nunoue ,  Toshiyuki Oka

IPC: H01L31/0256 ,  H01L21/316

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

Abstract: A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

Abstract translation: 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US20100148203A1

公开(公告)日：2010-06-17

申请号：US12638354

申请日：2009-12-15

Applicant: Rei HASHIMOTO ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

Inventor： Rei HASHIMOTO ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/507 ,  H01L33/644 ,  H01S5/02292 ,  H01S5/32341

Abstract: There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.

Abstract translation: 提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形 在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件 荧光体层的。

公开(公告)号：US20100053970A1

公开(公告)日：2010-03-04

申请号：US12411912

申请日：2009-03-26

Applicant: Takahiro Sato ,  Shinji Saito ,  Shinya Nunoue ,  Yasushi Hattori ,  Maki Sugai

Inventor： Takahiro Sato ,  Shinji Saito ,  Shinya Nunoue ,  Yasushi Hattori ,  Maki Sugai

IPC: G02B27/20 ,  G02F1/35

CPC classification number: G02B6/001 ,  G02B6/0096 ,  G02F1/133603 ,  G02F1/133609 ,  G02F2001/133614 ,  G02F2201/02

Abstract: A light-emitting device includes: a first laser light source; a first diffusion member provided along a light axis of a first light radiated form the first laser light source; and a first wavelength converter provided along the first diffusion member. The first diffusion member generates a second light from the first light. The second light outgoes in a direction different from the light axis direction of the first light. A ratio of generating the second light from the first light in a first part is higher than that in a second part, wherein an intensity of the first light in the first part is lower than that in a second part. The first wavelength converter absorbs the second light and emitting a third light having a different wavelength from the second light.

Abstract translation: 发光装置包括：第一激光光源; 沿着从所述第一激光光源照射的第一光的光轴设置的第一漫射部件; 以及沿着第一扩散部件设置的第一波长转换器。 第一漫射构件从第一光产生第二光。 第二光在与第一光的光轴方向不同的方向上出射。 在第一部分中产生来自第一光的第二光的比例高于第二部分中的第一光的比率，其中第一部分中的第一光的强度低于第二部分中的第一光的强度。 第一波长转换器吸收第二光并发射与第二光不同波长的第三光。

公开(公告)号：US20090185589A1

公开(公告)日：2009-07-23

申请号：US12408810

申请日：2009-03-23

Applicant: Yasushi HATTORI ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

Inventor： Yasushi HATTORI ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

IPC: H01S3/10 ,  F21V9/16 ,  G02F1/35

CPC classification number: H01L33/507 ,  B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/42 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

Abstract translation: 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与​​激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。

公开(公告)号：US20080006838A1

公开(公告)日：2008-01-10

申请号：US11689246

申请日：2007-03-21

Applicant: Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

Inventor： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

IPC: H01L29/22 ,  H01L21/00

CPC classification number: H01L33/20 ,  H01L33/382 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

Abstract translation: 一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字 形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

公开(公告)号：US20060291246A1

公开(公告)日：2006-12-28

申请号：US11287236

申请日：2005-11-28

Applicant: Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masahiro Yamamoto ,  Naomi Shida ,  Kei Kaneko ,  Genichi Hatakoshi

Inventor： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masahiro Yamamoto ,  Naomi Shida ,  Kei Kaneko ,  Genichi Hatakoshi

IPC: F21V7/04

CPC classification number: H01L33/507 ,  H01L33/505 ,  H01L33/60 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/0228 ,  H01S5/183 ,  H01S5/32341 ,  H01S5/327 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element is absorbed within the semiconductor light emitting device.

Abstract translation: 半导体发光元件包括发射紫外范围和可见光范围的光束的半导体发光元件，以及吸收来自半导体发光元件的光束的荧光元件，并且沿与第一半导体发光元件不同的光取出方向输出可见光束 发光方向。 从发光元件发射的光束在半导体发光器件内被吸收。

公开(公告)号：US06316785B1

公开(公告)日：2001-11-13

申请号：US09418025

申请日：1999-10-14

Applicant: Shinya Nunoue ,  Masahiro Yamamoto

Inventor： Shinya Nunoue ,  Masahiro Yamamoto

IPC: H01L3300

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

Abstract: A GaAlInBN systems semiconductor device is spaced apart from a substrate by a layer for reducing the propagation of a dislocation. This layer has a protrusion or protrusions, each having sidewalls on which a single crystal is exposed.

Abstract translation: GaAlInBN系统半导体器件通过用于减少位错传播的层与衬底间隔开。 该层具有突起或突起，每个突起或突起均具有暴露单晶的侧壁。

公开(公告)号：US06303405B1

公开(公告)日：2001-10-16

申请号：US09404727

申请日：1999-09-24

Applicant: Hiroaki Yoshida ,  Kazuhiko Itaya ,  Shinji Saito ,  Johji Nishio ,  Shinya Nunoue

Inventor： Hiroaki Yoshida ,  Kazuhiko Itaya ,  Shinji Saito ,  Johji Nishio ,  Shinya Nunoue

IPC: H01L2100

CPC classification number: H01L21/76251 ,  H01L33/007 ,  H01L33/0079 ,  H01L2221/68318

Abstract: A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a “lift-off layer” and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.

Abstract translation: 例如，通过在蓝宝石衬底上外延生长氮化物半导体层，然后分离衬底，进行切割性，散热性和耐漏电性优异的氮化物半导体发光元件。 为了分离衬底，存在使用易受诸如“剥离层”和衬底上的凹陷等应力敏感的剥离机构的技术。 使用激光在剥离机制下引起局部致密热应激的技术是有效的。 通过分离衬底获得的氮化物化合物半导体可以用作新的衬底，以在其上外延生长高质量的氮化物半导体。

公开(公告)号：US06185238B2

公开(公告)日：2001-02-06

申请号：US09026913

申请日：1998-02-20

Applicant: Masaaki Onomura ,  Genichi Hatakoshi ,  Shinya Nunoue ,  Masayuki Ishikawa

Inventor： Masaaki Onomura ,  Genichi Hatakoshi ,  Shinya Nunoue ,  Masayuki Ishikawa

IPC: H01S319

CPC classification number: B82Y20/00 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2213 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.

Abstract translation: 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。