公开(公告)号：US20200063263A1

公开(公告)日：2020-02-27

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20190385849A1

公开(公告)日：2019-12-19

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190333760A1

公开(公告)日：2019-10-31

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/513

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

公开(公告)号：US20190316256A1

公开(公告)日：2019-10-17

申请号：US16382643

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US20190157067A1

公开(公告)日：2019-05-23

申请号：US16195168

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/02

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.

公开(公告)号：US10242885B2

公开(公告)日：2019-03-26

申请号：US15606461

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Benjamin Schmiege

IPC: H01L21/302 ,  H01L21/465 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/28

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：US10233541B2

公开(公告)日：2019-03-19

申请号：US13923599

申请日：2013-06-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson

IPC: C23C16/00 ,  C23C16/40

Abstract: Described are methods of depositing a metal film by chemical reaction on a substrate. The method comprises: exposing the substrate to flows of a first reactant gas comprising a group 2 metal and a second reactant gas comprising a halide to form a first layer containing a metal halide on the substrate; exposing the substrate to a third reactant gas comprising an oxidant to form a second layer containing a metal peroxide or metal hydroxide on the substrate during; exposing the substrate to heat or a plasma to convert the metal peroxide or metal hydroxide to metal oxide. The method may be repeated to form the metal oxide film absent any metal carbonate impurity.

公开(公告)号：US20190078203A1

公开(公告)日：2019-03-14

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/52 ,  C23C16/455 ,  C23C16/513

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US10199215B2

公开(公告)日：2019-02-05

申请号：US15684827

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Schubert S. Chu ,  Jessica S. Kachian ,  David Thompson ,  Jeffrey Anthis

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  H01L21/283 ,  C23C16/455 ,  C23C16/52

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US20180366322A1

公开(公告)日：2018-12-20

申请号：US16013884

申请日：2018-06-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.