公开(公告)号：US20080179181A1

公开(公告)日：2008-07-31

申请号：US11733984

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极 工件支撑电极为频率f 1。 该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080179008A1

公开(公告)日：2008-07-31

申请号：US11685772

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: H01L21/306

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.

Abstract translation: 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界 。 真空泵联接到下部处理区。 较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。 耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

公开(公告)号：US07320734B2

公开(公告)日：2008-01-22

申请号：US10646527

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: C23C16/00 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/321

Abstract: A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.

Abstract translation: 一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸 通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。 外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽 路径延伸穿过管道并跨越过程区域。 反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体 在房间里 该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

公开(公告)号：US07312148B2

公开(公告)日：2007-12-25

申请号：US11199570

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/44

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

Abstract: A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

Abstract translation: 在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。 该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线 薄膜结构在横向于光线的方向上。

公开(公告)号：US07292428B2

公开(公告)日：2007-11-06

申请号：US11115951

申请日：2005-04-26

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

IPC: H02N13/00

CPC classification number: H01L21/68742 ,  H01L21/6831

Abstract: A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer. A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

Abstract translation: 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小的力检测器感测由提升销施加的足够大的力以指示夹紧的晶片并且足够小以避免使晶片脱扣。 大的力检测器感测由提升销施加的力在足以脱离晶片的范围内。

公开(公告)号：US07109098B1

公开(公告)日：2006-09-19

申请号：US11131904

申请日：2005-05-17

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/26

CPC classification number: H01L21/268 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/26513 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146

Abstract: A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

Abstract translation: 在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流 路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

公开(公告)号：US07094316B1

公开(公告)日：2006-08-22

申请号：US09638075

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

Inventor： Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

IPC: C23C16/00 ,  C23F1/02

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

Abstract translation: 一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。 至少一个中空管道连接到第一和第二开口。 通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。 工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。 线圈天线​​耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

公开(公告)号：US07037813B2

公开(公告)日：2006-05-02

申请号：US10646612

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: H01L21/04 ,  H01L21/84

CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

Abstract: A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.

Abstract translation: 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定加工区域， 并且将包括待植入物种的工艺气体引入到工件的表面层中。 该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。 该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

公开(公告)号：US06939434B2

公开(公告)日：2005-09-06

申请号：US10164327

申请日：2002-06-05

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

IPC: H01J37/32 ,  C23C16/00 ,  C23F1/00

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32412

Abstract: A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

Abstract translation: 描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。 所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。 反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流， 跨越所述处理区域。 磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

公开(公告)号：US06623596B1

公开(公告)日：2003-09-23

申请号：US09523824

申请日：2000-03-13

Applicant: Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Eric Askarinam ,  Joshua Chiu-Wing Tsui ,  David W. Groechel ,  Raymond Hung

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Eric Askarinam ,  Joshua Chiu-Wing Tsui ,  David W. Groechel ,  Raymond Hung

IPC: C23F100

CPC classification number: H01J37/32458 ,  A21D2/185 ,  A23G3/346 ,  A23G9/52 ,  A23G2200/06 ,  A23L2/60 ,  A23L9/12 ,  A23L19/115 ,  A23L27/30 ,  A23L27/32 ,  A23L29/231 ,  A23L29/238 ,  A23L29/256 ,  A23L29/27 ,  A23L33/21 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/6831

Abstract: A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.

Abstract translation: 一种用于加工工件的等离子体反应器包括限定处理室的反应器壳体，用于在其处理期间支撑工件的室内的基座，覆盖在基底上的半导体窗口电极，用于将等离子体前体气体引入室中的气体入口系统 耦合到所述半导体窗口电极的电端子，与所述半导体窗电极的与所述半导体窗电极相对的一侧的电感天线，用于通过所述半导体窗电极将功率耦合到所述室的内部。