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171.发明授权Electron beam plasma source with arrayed plasma sources for uniform plasma generation 有权具有阵列等离子体源的电子束等离子体源，用于均匀等离子体产生公开(公告)号：US09129777B2
公开(公告)日：2015-09-08
申请号：US13595201
申请日：2012-08-27
Applicant: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
Inventor： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
CPC classification number: H01J37/3233 , H01J37/32082
Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.
Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源室和面向电子束源室的等离子体源的阵列，用于影响处理室的不同部分中的等离子体电子密度。 在另一个实施例中，提供了独立控制的电子束源室的阵列。
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172.发明授权Electron beam plasma source with segmented beam dump for uniform plasma generation 有权电子束等离子体源，具有分段光束堆，用于均匀等离子体产生公开(公告)号：US08951384B2
公开(公告)日：2015-02-10
申请号：US13595292
申请日：2012-08-27
Applicant: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
Inventor： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
CPC classification number: H01J37/3233 , G21K5/00 , H05H1/46 , H05H7/001
Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。
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173.发明授权Plasma immersion ion implantation reactor with extended cathode process ring 有权具有扩展阴极工艺环的等离子体浸没离子注入反应器公开(公告)号：US08900405B2
公开(公告)日：2014-12-02
申请号：US11985579
申请日：2007-11-14
Applicant: Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
Inventor： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC: C23C16/00 , H01L21/306 , H01J37/32
CPC classification number: H01J37/32642 , H01J37/32412
Abstract: The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
Abstract translation: 本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。 在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。 在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。
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174.发明申请SWITCHED ELECTRON BEAM PLASMA SOURCE ARRAY FOR UNIFORM PLASMA PRODUCTION 审中-公开切换电子束等离子体源阵列进行均匀等离子体生产公开(公告)号：US20130098872A1
公开(公告)日：2013-04-25
申请号：US13595134
申请日：2012-08-27
Applicant: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
Inventor： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
CPC classification number: H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/32669
Abstract: An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities.
Abstract translation: 周期性地切换围绕等离子体反应器的处理区域的电子束源的阵列，以改变电子束传播方向并去除或减少不均匀性。
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175.发明申请ELECTRON BEAM PLASMA SOURCE WITH ARRAYED PLASMA SOURCES FOR UNIFORM PLASMA GENERATION 有权电子束等离子体源与等离子体等离子体生成的等离子体源公开(公告)号：US20130098551A1
公开(公告)日：2013-04-25
申请号：US13595201
申请日：2012-08-27
Applicant: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
Inventor： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
IPC: C23F1/08
CPC classification number: H01J37/3233 , H01J37/32082
Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.
Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源室和面向电子束源室的等离子体源的阵列，用于影响处理室的不同部分中的等离子体电子密度。 在另一个实施例中，提供了独立控制的电子束源室的阵列。
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Patent Agency Ranking
176.发明申请METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL 审中-公开用于控制光电子束宽度粗糙度的方法和装置，具有增强的电子旋转控制公开(公告)号：US20120318773A1
公开(公告)日：2012-12-20
申请号：US13455753
申请日：2012-04-25
Applicant: Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
Inventor： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
CPC classification number: H01J37/32669 , H01J37/32009 , H01J37/32422 , H01J37/3244 , H01L21/0273 , H01L21/31144
Abstract: The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.
Abstract translation: 本发明提供了通过增强的电子纺丝控制来控制和修改光致抗蚀剂层的线宽粗糙度（LWR）的方法和装置。 在一个实施例中，用于控制设置在基板上的光致抗蚀剂层的线宽粗糙度的装置包括处理室，该处理室具有室主体，该室主体具有限定内部处理区域的顶壁，侧壁和底壁， 处理室的内部处理区域和设置在处理室中的等离子体发生器源，其可操作以主要向内部处理区域提供电子束源。
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公开(公告)号：US08279577B2
公开(公告)日：2012-10-02
申请号：US12849012
申请日：2010-08-02
Applicant: Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
Inventor： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC: H01T23/00
CPC classification number: C23C14/564 , C23C16/4404 , H01J37/16 , H01J37/32504 , H01J37/32862 , H01J37/32871 , H01J2237/022 , H01L21/6875 , H01L21/68757 , Y10T428/24 , Y10T428/31678
Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.
Abstract translation: 用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道 。 下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。 提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。
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178.发明申请COMPONENT TEMPERATURE CONTROL BY COOLANT FLOW CONTROL AND HEATER DUTY CYCLE CONTROL 有权通过冷却液流量控制和加热器占空比控制的组件温度控制公开(公告)号：US20120048467A1
公开(公告)日：2012-03-01
申请号：US13040149
申请日：2011-03-03
Applicant: Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
Inventor： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
CPC classification number: G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。
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179.发明授权Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator 失效通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性公开(公告)号：US08080479B2
公开(公告)日：2011-12-20
申请号：US11733858
申请日：2007-04-11
Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: H01L21/302
CPC classification number: C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
Abstract translation: 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。
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公开(公告)号：US20110291771A1
公开(公告)日：2011-12-01
申请号：US13205933
申请日：2011-08-09
Applicant: Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
Inventor： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
CPC classification number: H03H7/38
Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。
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