SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    171.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20140131704A1

    公开(公告)日:2014-05-15

    申请号:US14156845

    申请日:2014-01-16

    Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

    Abstract translation: 本发明的实施例的目的是制造具有高显示质量和高可靠性的半导体器件,其包括能够使用具有良好电特性的晶体管在一个衬底上进行高速操作的像素部分和驱动器电路部分,以及 高可靠性作为开关元件。 在驱动器电路部分和像素部分中形成两个晶体管,每个晶体管的一个表面侧上包括结晶区域的氧化物半导体层用作有源层。 可以通过选择确定通道位置的栅电极层的位置来选择晶体管的电特性。 因此,可以制造包括能够高速操作的驱动电路部分和一个基板上的像素部分的半导体器件。

    LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
    173.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开
    液晶显示装置及其驱动方法及包括其的电子装置

    公开(公告)号:US20140002516A1

    公开(公告)日:2014-01-02

    申请号:US14016264

    申请日:2013-09-03

    Abstract: The liquid crystal display device includes a pixel portion including a plurality of pixels to which image signals are supplied; a driver circuit including a signal line driver circuit which selectively controls a signal line and a gate line driver circuit which selectively controls a gate line; a memory circuit which stores the image signals; a comparison circuit which compares the image signals stored in the memory circuit in the pixels and detects a difference; and a display control circuit which controls the driver circuit and reads the image signal in accordance with the difference. The display control circuit supplies the image signal only to the pixel where the difference is detected. The pixel includes a thin film transistor including a semiconductor layer including an oxide semiconductor.

    Abstract translation: 液晶显示装置包括:像素部,包括供给图像信号的多个像素; 包括选择性地控制信号线的信号线驱动电路和选择性地控制栅极线的栅极线驱动电路的驱动电路; 存储电路,存储图像信号; 比较电路,其比较存储在所述像素中的所述存储电路中的图像信号并检测差异; 以及显示控制电路,其控制驱动电路并根据该差读取图像信号。 显示控制电路仅将图像信号提供给检测到差异的像素。 像素包括包括包括氧化物半导体的半导体层的薄膜晶体管。

    LIGHT-EMITTING DEVICE
    174.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20130321371A1

    公开(公告)日:2013-12-05

    申请号:US13900882

    申请日:2013-05-23

    Inventor: Jun KOYAMA

    Abstract: A light-emitting device capable of displaying an image using image signals having different polarities is provided. The light-emitting device includes a first circuit holding a first image signal having a first polarity, a second circuit holding a second image signal having a second polarity different from the first polarity and converting the second polarity of the held second image signal into the first polarity, and a light-emitting element whose luminance is sequentially determined in response to the first image signal held in the first circuit and the second image signal whose polarity is converted into the first polarity in the second circuit.

    Abstract translation: 提供能够使用具有不同极性的图像信号显示图像的发光装置。 发光装置包括保持具有第一极性的第一图像信号的第一电路,保持具有与第一极性不同的第二极性的第二图像信号的第二电路,并将所保持的第二图像信号的第二极性转换成第一 极性以及响应于保持在第一电路中的第一图像信号和在第二电路中极性转换为第一极性的第二图像信号依次确定亮度的发光元件。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    175.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20130299832A1

    公开(公告)日:2013-11-14

    申请号:US13945440

    申请日:2013-07-18

    Abstract: The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween

    Abstract translation: 本发明的目的是提供一种包括具有低布线电阻的大面积集成电路的TFT的可靠的半导体器件。 本发明的特征之一是在一个TFT中设置包括与栅电极重叠的区域和不与栅电极重叠的区域的LDD区域。 本发明的另一特征在于,栅电极包括第一导电层和第二导电层,并且栅极配线的一部分具有包含第一导电层和第二导电层的包层结构,其间具有低电阻层

    SEMICONDUCTOR DEVICE
    176.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20130240873A1

    公开(公告)日:2013-09-19

    申请号:US13790391

    申请日:2013-03-08

    Abstract: To provide a semiconductor device with low power consumption in which a malfunction due to drop in voltage, delay of signal transmission, distortion of a signal waveform, and the like, which are caused by increase in wiring resistance, and decrease in reliability are prevented. A gate wiring is formed of a conductive layer containing copper, and a signal wiring formed of part of the same conductive layer as a source electrode and a drain electrode and a wiring formed of part of the same conductive layer as the gate wiring are electrically connected to each other in series or in parallel; thus, wiring resistance of the signal wiring is substantially decreased without an increase in width or thickness of the signal wiring.

    Abstract translation: 提供一种低功耗的半导体器件,其中防止由于布线电阻增加引起的电压降低,信号传输延迟,信号波形失真等的故障以及可靠性降低。 栅极布线由含有铜的导电层形成,并且由与源电极和漏电极相同的导电层的一部分形成的信号布线和由与栅极布线相同的导电层的一部分形成的布线电连接 相互串联或并联; 因此,信号布线的布线电阻大大降低而不增加信号布线的宽度或厚度。

    CIRCUIT, SENSOR CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SENSOR CIRCUIT
    177.
    发明申请
    CIRCUIT, SENSOR CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SENSOR CIRCUIT 有权
    电路,传感器电路和使用传感器电路的半导体器件

    公开(公告)号:US20130181854A1

    公开(公告)日:2013-07-18

    申请号:US13740801

    申请日:2013-01-14

    CPC classification number: H03M1/124 G01D3/028 G11C27/026 H01L27/1225 H01L29/00

    Abstract: A sensor circuit for obtaining physical quantities with a small margin of error even when the temperature varies is provided. The sensor circuit includes a sensor, a sampling circuit for obtaining a voltage value or a current value of a signal output from the sensor during a predetermined period and holding the value, and an analog-to-digital converter circuit for converting the held analog voltage value or current value into a digital value. The sampling circuit includes a switch for obtaining the voltage value or the current value and holding the value. The switch includes a transistor including an oxide semiconductor in a channel formation region.

    Abstract translation: 提供用于获得即使在温度变化时具有小误差率的物理量的传感器电路。 传感器电路包括传感器,用于获得在预定时段期间从传感器输出的信号的电压值或电流值并保持该值的采样电路,以及用于转换所保持的模拟电压的模数转换器电路 值或当前值转换为数字值。 采样电路包括用于获得电压值或电流值并保持该值的开关。 开关包括在沟道形成区域中包括氧化物半导体的晶体管。

    SEMICONDUCTOR DEVICE
    179.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20130056763A1

    公开(公告)日:2013-03-07

    申请号:US13668426

    申请日:2012-11-05

    Abstract: An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor.

    Abstract translation: 目的在于提供一种可以实现晶闸管功能的半导体器件,而不会使工艺复杂化。 包括通过复位操作和初始化操作来存储预定电位的存储电路的半导体器件设置有根据触发信号的提供重写存储电路中的数据的电路。 半导体器件具有这样的结构,其中流过半导体器件的电流通过重写存储器电路中的数据而被提供给负载,并且因此可以用作晶闸管。

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