公开(公告)号：US07060587B2

公开(公告)日：2006-06-13

申请号：US11045954

申请日：2005-01-28

Applicant: Twan Bearda ,  Eddy Kunnen

Inventor： Twan Bearda ,  Eddy Kunnen

IPC: H01L21/76

CPC classification number: B81C1/00031 ,  B81B1/002 ,  B81C2201/0115 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L33/22 ,  Y10S438/96

Abstract: A method for forming macropores in a substrate is disclosed. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cover layer is removed until the submicron features are exposed. The submicron features are then etched selectively to the cover layer, thereby creating a pattern of submicron openings in this cover layer. The patterned cover layer is used as a hardmask to etch macropores in the substrate.

Abstract translation: 公开了一种在衬底中形成大孔的方法。 在衬底上形成亚微米特征的图案。 该图案被层覆盖，该层优选地相对于基底和亚微米特征可选择性地移除。 去除该覆盖层，直到亚微米特征暴露。 然后将亚微米特征选择性地蚀刻到覆盖层，从而在该覆盖层中产生亚微米开口的图案。 图案化覆盖层用作硬掩模以蚀刻基底中的大孔。

公开(公告)号：US20060063293A1

公开(公告)日：2006-03-23

申请号：US11223637

申请日：2005-09-08

Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L21/00

CPC classification number: B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

Abstract translation: 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

公开(公告)号：US06906392B2

公开(公告)日：2005-06-14

申请号：US10381307

申请日：2002-07-06

Applicant: Hubert Benzel ,  Heribert Weber ,  Michael Bauer ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schaefer ,  Christian Krummel

Inventor： Hubert Benzel ,  Heribert Weber ,  Michael Bauer ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schaefer ,  Christian Krummel

IPC: B81B3/00 ,  G01N27/04 ,  G01N27/12 ,  G01N27/18 ,  G01N27/22 ,  H01L27/14 ,  G01N7/00

CPC classification number: B81B3/0081 ,  B81B2203/0127 ,  B81C2201/0115 ,  G01N27/227

Abstract: A micromechanical component includes a substrate and a cover layer deposited on the substrate, underneath the cover layer, a region of porous material being provided which mechanically supports and thermally insulates the cover layer. On the cover layer, a heating device is provided to heat the cover layer above the region; and above the region, a detector is provided to measure an electric property of a heated medium provided above the region on the cover layer.

Abstract translation: 微机械部件包括沉积在覆盖层下面的基底上的基底和覆盖层，提供机械支撑和热绝缘覆盖层的多孔材料区域。 在覆盖层上，设置加热装置以加热该区域上方的覆盖层; 并且在该区域之上，提供检测器以测量设置在覆盖层上的区域上方的加热介质的电性质。

公开(公告)号：US20040266050A1

公开(公告)日：2004-12-30

申请号：US10486182

申请日：2004-08-20

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schafer

IPC: H01L021/00

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

公开(公告)号：US06759265B2

公开(公告)日：2004-07-06

申请号：US10268711

申请日：2002-10-10

Applicant: Hans Artmann ,  Thorsten Pannek

Inventor： Hans Artmann ,  Thorsten Pannek

IPC: H01L2100

CPC classification number: B81C1/0069 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0139

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract translation: 在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。 由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料 在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

公开(公告)号：US20040080004A1

公开(公告)日：2004-04-29

申请号：US10450362

申请日：2003-11-12

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L027/14

CPC classification number: B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

Abstract: A micromechanical component is described which includes a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane area (10a); a cavity (50) that is provided underneath the membrane area (10a); and one or more porous areas (150; 150null), which are provided inside the monocrystalline layer (10) and which have a doping (nnull; pnull) that is higher than that of the surrounding layer (10).

Abstract translation: 描述了一种微机械部件，其包括基板（1）; 单晶层（10），其设置在所述基板（1）的上方，并且具有膜区域（10a）; 设置在膜区域（10a）下方的空腔（50）; 以及一个或多个多孔区域（150; 150'），其设置在单晶层（10）的内部并且具有比周围层（10）的掺杂（n +; p +）更高的掺杂 ）。

公开(公告)号：US20040065931A1

公开(公告)日：2004-04-08

申请号：US10451775

申请日：2003-11-12

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L021/00

CPC classification number: B81C1/00492 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81C2201/0115 ,  Y10S438/96

Abstract: A method of producing a semiconductor component (300; 400; 500; 600; 700; 800; 900; 1000; 1100), in particular a multilayer semiconductor component, and a semiconductor component produced by this method are described, where the semiconductor component has in particular a mobile mass, i.e., an oscillator structure (501, 502; 601, 702) according to the preambles of the respective independent patent claims. To easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures (501, 502; 601, 702), such as an acceleration sensor or a rotational rate sensor in particular, by surface micromechanics, a first porous layer (301; 901) is formed in the semiconductor component in a first step and a cavity, i.e., a cavern (302; 1101), is formed beneath or out of the first porous layer (301) in the semiconductor component in a second step.

Abstract translation: 描述了通过该方法制造半导体部件（300; 400; 500; 600; 700; 800; 900; 1000; 1100），特别是多层半导体部件和半导体部件的方法，其中半导体部件具有 特别是移动质量，即根据相应的独立权利要求的前序的振荡器结构（501,502; 601,702）。 为了容易且廉价地制造具有单晶振荡器结构（501,502; 601,702）的微机械部件，例如加速度传感器或转速传感器，特别是通过表面微机械，形成第一多孔层（301; 901） 在第二步骤中在第一步骤中的半导体部件和腔体（即，洞穴（302; 1101））形成在半导体部件中的第一多孔层（301）的下面或外部。

公开(公告)号：US20040028875A1

公开(公告)日：2004-02-12

申请号：US10433275

申请日：2003-09-29

Inventor： Cornelis Johannes Maria Van Rijn ,  Laura Vogelaar ,  Wietze Nijdam ,  Jonathan Nathaniel Barsema ,  Matthias Wessling

IPC: B29C039/00

CPC classification number: B01D67/0088 ,  A61F2/06 ,  A61F2002/044 ,  A61F2002/046 ,  A61L27/50 ,  A61L27/56 ,  B01D67/0009 ,  B01D67/0018 ,  B01D67/002 ,  B01D67/0069 ,  B01D67/0072 ,  B01D67/0093 ,  B01D69/00 ,  B01D69/02 ,  B01D69/08 ,  B01D69/12 ,  B01D71/02 ,  B01D71/64 ,  B01D71/68 ,  B01D2323/06 ,  B01D2323/08 ,  B01D2323/30 ,  B01D2325/022 ,  B01D2325/04 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00824 ,  B01J2219/00833 ,  B01J2219/00835 ,  B01J2219/00844 ,  B01J2219/0086 ,  B01J2219/00864 ,  B01J2219/00907 ,  B01L3/0241 ,  B01L3/5085 ,  B01L2200/12 ,  B01L2300/0819 ,  B29C33/0033 ,  B29C41/08 ,  B29C41/38 ,  B29C67/02 ,  B29K2105/0073 ,  B29L2031/737 ,  B81B2201/10 ,  B81C99/008 ,  B81C2201/0115 ,  B81C2201/034 ,  G01N27/44704 ,  H01L31/18 ,  Y10T428/24

Abstract: Using phase separation technique perforated as well as non-perforated polymeric structures can be made with high aspect ratios (>5). By varying the phase separation process the properties (e.g. porous, non-porous, dense, open skin) of the moulded product can be tuned. Applications are described in the field of micro fluidics (e.g. micro arrays, electrophoretic boards), optics, polymeric solar cells, ball grid arrays, and tissue engineering.

Abstract translation: 使用相分离技术穿孔以及非穿孔聚合物结构可以制成高纵横比（> 5）。 通过改变相分离方法，可以调节模制产品的性质（例如多孔，无孔，致密，开放的皮肤）。 应用在微流体学（例如微阵列，电泳板），光学，聚合太阳能电池，球栅阵列和组织工程领域中描述。

公开(公告)号：US20030110867A1

公开(公告)日：2003-06-19

申请号：US10268711

申请日：2002-10-10

Inventor： Hans Artmann ,  Thorsten Pannek

IPC: G01F001/56

CPC classification number: B81C1/0069 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0139

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract translation: 在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。 由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料 在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

公开(公告)号：US06506621B1

公开(公告)日：2003-01-14

申请号：US10016026

申请日：2001-12-12

Applicant: Hans Artmann ,  Thorsten Pannek ,  Robert Siegel

Inventor： Hans Artmann ,  Thorsten Pannek ,  Robert Siegel

IPC: H01L2100

CPC classification number: G01J5/06 ,  B81B3/0081 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01J5/10

Abstract: In a method for producing a diaphragm sensor array having a semiconductor material substrate on which a plurality of planar diaphragm regions is arranged as a carrier layer for sensor elements, the planar diaphragm regions are thermally decoupled from one another by crosspieces made of a material having clearly better heat conductive properties compared to the diaphragm regions and the lateral surroundings of the crosspieces. Masking for a subsequent step for producing porous semiconductor material is applied at the locations of the semiconductor material substrate at which the crosspieces for the thermal decoupling are formed, and the semiconductor regions not protected by the masking are rendered porous and the diaphragm regions are produced thereupon. Instead of using porous silicon, a plasma etching process may be performed from the backside of a semiconductor material substrate. In particular, high integration densities of diaphragm sensors may be achieved with both methods. A diaphragm sensor array is produced by one of the methods.

Abstract translation: 在具有半导体材料基板的膜片传感器阵列的制造方法中，多个平面膜片区域被布置为传感器元件的载体层，平面隔膜区域通过由具有清楚的材料制成的横条而彼此热分离 与隔膜区域和横梁的横向周围相比，具有更好的导热性能。 在用于制造多孔半导体材料的后续步骤中的掩模被应用于半导体材料基板的用于形成用于热解耦的接头的位置处，并且未被掩蔽保护的半导体区域变得多孔，并且在其上产生隔膜区域 。 代替使用多孔硅，可以从半导体材料基板的背面进行等离子体蚀刻工艺。 特别地，可以通过两种方法实现膜片传感器的高集成度。 通过这些方法之一产生膜片传感器阵列。