公开(公告)号：US20120164818A1

公开(公告)日：2012-06-28

申请号：US13032308

申请日：2011-02-22

申请人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Masanori SAITO ,  Hidehisa NANAI ,  Yoshinori AKAMATSU

发明人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Masanori SAITO ,  Hidehisa NANAI ,  Yoshinori AKAMATSU

IPC分类号： H01L21/322

CPC分类号： H01L21/02057

摘要： Disclosed is a process for cleaning a wafer having an uneven pattern at its surface. The process includes at least: a step of cleaning the wafer; a step of substituting a cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and a step of drying the wafer. The process is characterized in that the cleaning liquid has a boiling point of 55 to 200° C., and characterized in that the water-repellent liquid chemical used for the substitution has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions. With this process, it is possible to provide a cleaning process for improving the cleaning step that tends to induce a pattern collapse.

摘要翻译： 公开了一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括：清洁晶片的步骤; 在清洁之后用拒水性液体化学品代替保留在晶片的凹陷部分中的清洁液体的步骤; 以及干燥晶片的步骤。 该方法的特征在于清洗液的沸点为55-200℃，其特征在于用于替代的拒水液体化学品的温度不低于40℃，低于 所述防水液体化学品的沸点至少赋予所述凹部的表面防水性。 通过该处理，可以提供改善倾向于引起图案塌陷的清洁步骤的清洁处理。

公开(公告)号：US20120108042A1

公开(公告)日：2012-05-03

申请号：US12938845

申请日：2010-11-03

申请人： Jennifer Lequn Liu ,  Shu Qin ,  Allen McTeer ,  Yongjun Jeff Hu

发明人： Jennifer Lequn Liu ,  Shu Qin ,  Allen McTeer ,  Yongjun Jeff Hu

IPC分类号： H01L21/322

CPC分类号： H01L21/2236 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26526 ,  H01L29/66575

摘要： Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.

摘要翻译： 一些实施例包括在半导体衬底中形成一个或多个掺杂区域的方法。 可以使用等离子体掺杂来形成第一掺杂剂到衬底内的第一深度。 然后可以用第二掺杂剂冲击第一掺杂剂以将第一掺杂剂敲入衬底内的第二深度。 在一些实施方案中，第一掺杂剂是p型（例如硼），第二掺杂剂是中性型（例如锗）。 在一些实施方案中，第二掺杂剂比第一掺杂剂重。

公开(公告)号：US20120083099A1

公开(公告)日：2012-04-05

申请号：US13270954

申请日：2011-10-11

申请人： Ralph G. NUZZO ,  John A. ROGERS ,  Etienne MENARD ,  Keon Jae LEE ,  Dahl-Young KHANG ,  Yugang SUN ,  Matthew MEITL ,  Zhengtao ZHU ,  Heung Cho KO ,  Shawn MACK

发明人： Ralph G. NUZZO ,  John A. ROGERS ,  Etienne MENARD ,  Keon Jae LEE ,  Dahl-Young KHANG ,  Yugang SUN ,  Matthew MEITL ,  Zhengtao ZHU ,  Heung Cho KO ,  Shawn MACK

IPC分类号： H01L21/322

CPC分类号： H01L29/72 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02628 ,  H01L21/30 ,  H01L21/3083 ,  H01L21/31612 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/66265 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/18 ,  H01L31/1804 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/13091 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

摘要翻译： 本发明提供了用于制造，传输和组装具有选定的物理尺寸，形状，组成和空间取向的高质量可印刷半导体元件的高产率路径。 本发明的组合物和方法提供了高精度的记录转印和将微尺寸和/或纳米半导体结构的阵列集成到包括大面积衬底和/或柔性衬底的衬底上。 此外，本发明提供了从诸如散装硅晶片的低成本散装材料制造可印刷的半导体元件的方法，以及能够实现通用和商业上有吸引力的基于印刷的制造平台的智能材料处理策略，以制造广泛的功能性 半导体器件。

公开(公告)号：US08138066B2

公开(公告)日：2012-03-20

申请号：US12242990

申请日：2008-10-01

申请人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

发明人： Chung Woh Lai ,  Xiao Hu Liu ,  Anita Madan ,  Klaus W. Schwarz ,  J. Campbell Scott

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/3226 ,  H01L29/1054 ,  H01L29/7842

摘要： A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

摘要翻译： 提供了一种在半导体器件中产生图案化应变区域的方法。 该方法包括将发光束局部引导到半导体本体的表面部分上; 以及利用所述发光束操作位于所述半导体主体的表面部分附近的多个位错，所述发光束的特征在于具有扫描速度，以便产生所述图案化的应变区域。

公开(公告)号：US20120049330A1

公开(公告)日：2012-03-01

申请号：US13266159

申请日：2010-04-09

申请人： Yasushi Yukimoto

发明人： Yasushi Yukimoto

IPC分类号： H01L29/36 ,  H01L21/322 ,  H01L21/20

CPC分类号： H01L21/3221 ,  H01L21/3225

摘要： A method of producing a silicon wafer comprises the steps of subjecting a silicon wafer, which has been sliced from a silicon single crystal ingot grown by the Czochralski method, to RTA treatment in a nitriding gas atmosphere; forming an oxide film on a surface of either side of the wafer; then forming a polysilicon layer thereon. The polysilicon layer on the front side of the wafer is removed and a wafer free of crystal defects in the surface part and with improved gettering performance is obtained. The polysilicon layer may be formed not on the surface of either side of the wafer but only on the back side thereof. It is desirable that a wafer composed of only a defect-free region is used as the source material since a defect-free layer can be stably secured in the wafer surface part.

摘要翻译： 一种硅晶片的制造方法，其特征在于，在氮化气体气氛下，对经由切克劳斯基（Czochralski）生长的硅单晶锭切片的硅晶片进行RTA处理， 在晶片的任一侧的表面上形成氧化膜; 然后在其上形成多晶硅层。 去除晶片前侧的多晶硅层，并且获得表面部分中没有晶体缺陷并且具有改善的吸杂性能的晶片。 多晶硅层可以不形成在晶片的任一侧的表面上，而仅在其背面。 希望由仅由无缺陷区构成的晶片用作源材料，因为可以在晶片表面部分中稳定地确保无缺陷层。

公开(公告)号：US20120001301A1

公开(公告)日：2012-01-05

申请号：US13255182

申请日：2010-03-17

申请人： Koji Ebara ,  Yoshinori Hayamizu ,  Hiroyasu Kikuchi

发明人： Koji Ebara ,  Yoshinori Hayamizu ,  Hiroyasu Kikuchi

IPC分类号： H01L29/30 ,  H01L21/322

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： An annealed wafer obtained by performing rapid thermal annealing on a silicon single crystal wafer sliced from a silicon single crystal ingot in which an entire plane is an OSF region, an N region outside an OSF region, or a mixed region thereof, the silicon single crystal ingot being grown by the Czochralski method, in which RIE defects do not exist in a region having at least a depth of 1 μm from a surface, a good chip yield of a TDDB characteristic is 80% or more, and a depth of a region where an oxygen concentration is decreased due to outward diffusion is within 3 μm from the surface, and a method for producing an annealed wafer.

摘要翻译： 通过对从其中整个平面是OSF区域，OSF区域外部的N区域或其混合区域的硅单晶锭切片的硅单晶晶片进行快速热退火而获得的退火晶片，所述硅单晶 铸锭通过Czochralski法生长，其中在距离表面至少具有1μm深度的区域中不存在RIE缺陷，TDDB特性的良好的切屑产率为80％以上，区域的深度 其中由于向外扩散而导致的氧浓度降低在距表面3微米以内，以及退火晶片的制造方法。

公开(公告)号：US08062957B2

公开(公告)日：2011-11-22

申请号：US12867217

申请日：2009-01-23

申请人： Radouane Khalid

发明人： Radouane Khalid

IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L21/46 ,  H01L21/30 ,  H01L21/322

CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/76254

摘要： The invention relates to a method for preparing a surface of a semiconductor substrate by oxidizing the surface of the semiconductor substrate to thereby transform the natural oxide into an artificial oxide and then removing the artificial oxide, in particular to obtain an oxide-free substrate surface.

摘要翻译： 本发明涉及通过氧化半导体衬底的表面来制备半导体衬底的表面的方法，从而将天然氧化物转变成人造氧化物，然后除去人造氧化物，特别是获得无氧化物的衬底表面。

公开(公告)号：US20110244761A1

公开(公告)日：2011-10-06

申请号：US12805557

申请日：2010-08-05

申请人： Takehiro YOSHIDA

发明人： Takehiro YOSHIDA

IPC分类号： B24B7/22 ,  H01L21/322

CPC分类号： B24B7/228 ,  B24B7/17

摘要： A method of making a conductive group III nitride single crystal substrate includes feeding to a seed crystal a group III raw material gas, a group V raw material gas, and a doping raw material gas diluted with N2 or Ar to have a predetermined concentration, growing a group III nitride single crystal on the seed crystal at a growth rate of greater than 450 μm/hour and not greater than 2 mm/hour, and doping the group III nitride single crystal with an impurity contained in the doping raw material gas. The doping raw material gas is diluted to be inhibited from reacting with the group V raw material gas so as to allow the group III nitride single crystal to have a specific resistance of not less than 1×10−3 Ωcm and not more than 1×10−2 Ωcm.

摘要翻译： 制造导电III族氮化物单晶衬底的方法包括：向晶种中加入III族原料气体，V族原料气体和用N 2或Ar稀释的掺杂原料气体以具有预定浓度，生长 在晶种上以大于450μm/小时并且不大于2mm /小时的生长速率在晶种上掺杂III族氮化物单晶，并且掺杂掺杂原料气体中含有杂质的III族氮化物单晶。 掺杂原料气体被稀释以被抑制与第V族原料气体反应，以使III族氮化物单晶的电阻率不小于1×10-3＆OHgr·cm且不大于 1×10-2＆OHgr; cm。

公开(公告)号：US08030184B2

公开(公告)日：2011-10-04

申请号：US12334150

申请日：2008-12-12

申请人： Naoshi Adachi ,  Tamio Motoyama

发明人： Naoshi Adachi ,  Tamio Motoyama

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532

摘要： An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon lattices.

摘要翻译： 外延晶片包括硅基板，形成在其上并含有硅和碳的吸杂外延膜，以及形成在吸杂外延膜上的主硅外延膜，其中吸杂外延膜具有给定的碳原子浓度和碳原子存在 在它的硅晶格之间。

公开(公告)号：US20110227070A1

公开(公告)日：2011-09-22

申请号：US13051116

申请日：2011-03-18

申请人： Jin-Young Yoon ,  Hyun-Woo Kim ,  Chan Hwang ,  Yun-Kyeong Jang

发明人： Jin-Young Yoon ,  Hyun-Woo Kim ,  Chan Hwang ,  Yun-Kyeong Jang

IPC分类号： H01L29/02 ,  H01L29/06 ,  H01L21/322

CPC分类号： G03F7/70916 ,  G03F7/70341

摘要： Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.

摘要翻译： 本文提供了包括监测器基板和其上的调理层的吸气构件。 本文还提供了形成吸气层的方法和使用其进行浸渍光刻工艺的方法。