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    Removal of surface dopants from a substrate
    181.
    发明授权
    Removal of surface dopants from a substrate 有权
    从基底去除表面掺杂物

    公开(公告)号：US07989329B2

    公开(公告)日：2011-08-02

    申请号：US11963034

    申请日：2007-12-21

    Applicant: Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

    Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

    IPC: H01L21/38

    CPC classification number: H01L21/2254 ,  H01L21/2253

    Abstract: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

    Abstract translation: 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

    METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS
    182.
    发明申请
    METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS 有权
    用于调谐匹配网络的方法和装置

    公开(公告)号：US20110162798A1

    公开(公告)日：2011-07-07

    申请号：US12899048

    申请日：2010-10-06

    Applicant: CHUNLEI ZHANG ,  SERGIO F. SHOJI ,  ANDREY SEMENIN ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE ,  BRYAN LIAO

    Inventor： CHUNLEI ZHANG ,  SERGIO F. SHOJI ,  ANDREY SEMENIN ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE ,  BRYAN LIAO

    IPC: C23F1/08 ,  H03H7/38

    CPC classification number: H03H7/40 ,  H01J37/32183 ,  H01J37/32935 ,  H05H1/46

    Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

    Abstract translation: 本文提供了用于调整匹配网络的方法和装置。 调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。 可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。

    APPARATUS FOR VHF IMPEDANCE MATCH TUNING
    187.
    发明申请
    APPARATUS FOR VHF IMPEDANCE MATCH TUNING 失效
    甚高频阻抗匹配调谐装置

    公开(公告)号：US20110023780A1

    公开(公告)日：2011-02-03

    申请号：US12511377

    申请日：2009-07-29

    Applicant: KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  SAMER BANNA ,  ANDREW NGUYEN

    Inventor： KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  SAMER BANNA ,  ANDREW NGUYEN

    IPC: H03H7/38 ,  B05C13/00

    CPC classification number: H01P7/04

    Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

    Abstract translation: 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

    PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH
    188.
    发明申请
    PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 有权
    具有均匀加工速率分布的等离子体反应器通过改进的RF接地返回路径

    公开(公告)号：US20110005685A1

    公开(公告)日：2011-01-13

    申请号：US12501966

    申请日：2009-07-13

    Applicant: Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    Inventor： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    IPC: C23F1/08 ,  C23C16/503

    CPC classification number: H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

    Abstract: In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

    Abstract translation: 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

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