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公开(公告)号:US11714752B2
公开(公告)日:2023-08-01
申请号:US17702505
申请日:2022-03-23
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Christopher Haywood
IPC: G06F12/0804 , G06F12/12 , G11C14/00
CPC classification number: G06F12/0804 , G06F12/12 , G06F2212/1044 , G06F2212/205 , G11C14/0018
Abstract: A hybrid volatile/non-volatile memory module employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). A module controller prioritizes accesses to the DRAM cache for improved speed performance and to minimize programming cycles to the NVM. Data is first written to the DRAM cache where it can be accessed (written to and read from) without the aid of the NVM. Data is only written to the NVM when that data is evicted from the DRAM cache to make room for additional data. Mapping tables relating NVM addresses to physical addresses are distributed throughout the DRAM cache using cache line bits that are not used for data.
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公开(公告)号:US11705187B2
公开(公告)日:2023-07-18
申请号:US17501311
申请日:2021-10-14
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Kenneth L. Wright
IPC: G11C7/10 , G11C11/4093 , G11C11/4096 , G06F11/10 , G11C7/02 , G11C29/52 , G11C29/04
CPC classification number: G11C11/4093 , G06F11/1048 , G11C7/02 , G11C11/4096 , G11C29/52 , G11C2029/0411
Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.
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公开(公告)号:US11689246B2
公开(公告)日:2023-06-27
申请号:US17354235
申请日:2021-06-22
Applicant: Rambus Inc.
Inventor: John W. Poulton , Frederick A. Ware , Carl W. Werner
IPC: H04B3/56 , H04L25/02 , G06F13/40 , H03F3/24 , H04B3/54 , H04B10/50 , H04B10/40 , H04B10/073 , H04B1/04
CPC classification number: H04B3/56 , G06F13/4072 , H03F3/24 , H04B3/54 , H04L25/0272 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H01L2924/13091 , H01L2924/15311 , H04B10/0731 , H04B10/40 , H04B10/50 , H04B2001/0408 , H01L2224/48091 , H01L2924/00014 , H01L2924/13091 , H01L2924/00
Abstract: A single-ended data transmission system transmits a signal having a signal voltage that is referenced to a power supply voltage and that swings above and below the power supply voltage. The power supply voltage is coupled to a power supply rail that also serves as a signal return path. The signal voltage is derived from two signal supply voltages generated by a pair of charge pumps that draw substantially same amount of current from a power supply.
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公开(公告)号:US11664067B2
公开(公告)日:2023-05-30
申请号:US17391521
申请日:2021-08-02
Applicant: Rambus Inc.
Inventor: Frederick A. Ware
IPC: G06F13/16 , G06F13/42 , G11C7/10 , G11C11/409 , G11C11/4076 , G11C7/22 , G11C8/18 , G06F1/10
CPC classification number: G11C11/4076 , G06F1/10 , G06F13/1689 , G06F13/4243 , G11C7/1072 , G11C7/22 , G11C8/18 , G11C11/409 , G11C2207/2254
Abstract: An integrated circuit device outputs a sequence of differently delayed calibration data timing signals to a DRAM component via a data-signal timing line as part of a timing calibration operation and then stores a delay value, based on at least one of the calibration data timing signals, that compensates for a difference in signal propagation times over the data-signal timing line and a command/address-signal timing line. After the timing calibration operation, the integrated circuit device outputs write data to the DRAM component and outputs a write data timing signal, delayed according to the delay value, to via the data-signal timing line to time reception of the first write data within the DRAM.
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公开(公告)号:US20230073567A1
公开(公告)日:2023-03-09
申请号:US17883345
申请日:2022-08-08
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern , Brian Leibowitz , Jared Zerbe
Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.
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公开(公告)号:US11573897B2
公开(公告)日:2023-02-07
申请号:US17364722
申请日:2021-06-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware
IPC: G06F12/00 , G06F12/0802
Abstract: A hybrid memory module includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive flash memory. An address buffer on the module maintains a static, random-access memory (SRAM) cache of addresses for data cached in DRAM.
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公开(公告)号:US11568919B2
公开(公告)日:2023-01-31
申请号:US17334170
申请日:2021-05-28
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Suresh Rajan , Scott C. Best
IPC: G11C11/408 , G11C5/04 , G11C11/4093 , G06F12/06 , G06F13/16 , G11C7/10 , G11C7/22 , G11C11/4076
Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.
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公开(公告)号:US11507280B2
公开(公告)日:2022-11-22
申请号:US16875881
申请日:2020-05-15
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Robert E. Palmer , John W. Poulton
Abstract: A system includes a memory controller and a memory device having a command interface and a plurality of memory banks, each with a plurality of rows of memory cells. The memory controller transmits an auto-refresh command to the memory device. Responsive to the auto-refresh command, during a first time interval, the memory device performs refresh operations to refresh the memory cells and the command interface of the memory device is placed into a calibration mode for the duration of the first time interval. Concurrently, during at least a portion of the first time interval, the memory controller performs a calibration of a data interface circuit of the memory device. The auto-refresh command may specify an order in which memory banks of the memory device are to be refreshed, such that the memory device sequentially refreshes a respective row in the plurality of memory banks in the specified bank order.
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公开(公告)号:US11502681B2
公开(公告)日:2022-11-15
申请号:US17296575
申请日:2019-11-27
Applicant: Rambus Inc.
Inventor: Talip Ucar , Frederick A. Ware
Abstract: A transmitter merges even and odd data streams to drive a serialized signal. Identical even and odd drivers take turns driving symbols from respective even and odd streams using respective pull-up transistors and pull-down transistors. Each transistor exhibits a significant source-gate capacitance that is charged when the transistor is turned onto drive the serialized signal. Charging one of these capacitances loads the power supply and thus introduces noise. Each even and odd driver includes a pre-driver that times the charging of a source-gate capacitance in the active driver to the discharge of a source-gate capacitance in the inactive driver. The discharge of the source-gate capacitance in the inactive driver counters the effect of charging the active driver, providing much of the power required by the active driver and thus reducing supply noise.
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公开(公告)号:US11487679B2
公开(公告)日:2022-11-01
申请号:US17081909
申请日:2020-10-27
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
IPC: G06F13/14 , G06F13/16 , G11C7/10 , G11C8/18 , G11C11/419 , G11C7/22 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C5/02 , G06F13/40 , G11C29/02
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
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