公开(公告)号：US09614258B2

公开(公告)日：2017-04-04

申请号：US14107347

申请日：2013-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Minoru Takahashi ,  Kei Takahashi ,  Jun Koyama ,  Junpei Momo ,  Tamae Moriwaka

IPC: H02J7/00 ,  H01M10/48 ,  G01R31/36

CPC classification number: H01M10/48 ,  G01R31/3606 ,  H01M10/486

Abstract: To provide a power storage device, an operation condition of which is easily analyzed. A secondary battery includes a sensor that is a measurement unit, a microcontroller unit that is a determination unit, and a memory that is a memory unit. With the sensor, conditions of the secondary battery such as the remaining battery power, the voltage, the current, and the temperature are measured. The microcontroller unit performs arithmetic processing of the measurement results and determines the operation condition of the secondary battery. Further, the microcontroller unit stores the measurement result in the memory in accordance with the operation condition of the secondary battery.

公开(公告)号：US09601515B2

公开(公告)日：2017-03-21

申请号：US14294301

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L2029/7863

Abstract: A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

公开(公告)号：US20170053974A1

公开(公告)日：2017-02-23

申请号：US15341300

申请日：2016-11-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: H01L27/32 ,  H01L51/50 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/20

CPC classification number: H01L27/3248 ,  G09G3/2003 ,  G09G3/2014 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/3233 ,  G09G3/3275 ,  G09G3/3291 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5016 ,  H01L2251/5315

Abstract: An active matrix type EL display device is provided, which is capable of suppressing the unevenness of luminance display due to the unevenness of the characteristics of TFTs which constitute pixels, or due to variations in the environmental temperature at which the display device is used. The active matrix type EL display is driven by a time gray scale method, and is capable of keeping the drain current of each of its EL driving TFTs constant by operating each of the EL driving TFTs in a saturation region in an ON state. Accordingly, constant current can be made to flow in each of the EL elements, whereby it is possible to provide an active matrix type EL display device with accurate gray scale display and high image quality.

Abstract translation: 提供了一种有源矩阵型EL显示装置，其能够抑制由于构成像素的TFT的特性的不均匀性或由于使用显示装置的环境温度的变化而导致的亮度显示的不均匀性。 有源矩阵型EL显示器由时间灰度法驱动，并且能够通过在导通状态的饱和区域中操作每个EL驱动TFT来保持其每个EL驱动TFT的漏极电流恒定。 因此，可以在每个EL元件中流过恒定电流，从而可以提供具有准确的灰度显示和高图像质量的有源矩阵型EL显示装置。

公开(公告)号：US20170047387A1

公开(公告)日：2017-02-16

申请号：US15340069

申请日：2016-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Mai Akiba ,  Jun Koyama

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3258

CPC classification number: H01L27/3248 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/22 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3241 ,  G09G3/325 ,  G09G3/3258 ,  G09G3/3283 ,  G09G2300/04 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0256 ,  G09G2310/0262 ,  G09G2310/027 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2330/028 ,  G09G2330/04 ,  G09G2330/045 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/13 ,  H01L27/15 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L27/3279 ,  H01L29/4908 ,  H01L29/66757 ,  H01L33/20 ,  H01L33/32 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0059 ,  H01L51/0073 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/5259 ,  H01L2227/323 ,  H01L2251/308

Abstract: By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.

Abstract translation: 通过控制发光元件的亮度不是通过施加到TFT的电压来控制发光元件的亮度，而是通过控制在信号线驱动电路中流向TFT的电流，保持流向发光元件的电流 达到期望值，而不依赖于TFT的特性。 此外，每隔预定周期向发光元件施加反向偏压的电压。 由于通过上述两种配置给出乘法器效应，因此可以防止由于有机发光层的劣化引起的亮度劣化，并且还可以将流到发光元件的电流保持为 不依赖于TFT的特性的期望值。

公开(公告)号：US20170012062A1

公开(公告)日：2017-01-12

申请号：US15275687

申请日：2016-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

Abstract translation: 提供一种半导体装置，其包括在提高开口率的同时增加充电容量的电容器。 此外，提供消耗更少功率的半导体器件。 一种晶体管，其包括透光半导体膜，在一对电极之间设置有电介质膜的电容器，设置在所述透光半导体膜上的绝缘膜和第一透光性导电膜， 包括在绝缘膜上。 电容器包括用作一个电极的第一透光导电膜，用作电介质的绝缘膜和面向第一透光导电膜的第二透光导电膜，绝缘膜位于其间并具有功能 作为另一个电极。 第二透光导电膜形成在与晶体管的透光半导体膜相同的表面上，并且是含有掺杂剂的金属氧化物膜。

公开(公告)号：US20160358942A1

公开(公告)日：2016-12-08

申请号：US15239030

申请日：2016-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kiyoshi Kato ,  Jun Koyama ,  Yutaka Shionoiri

IPC: H01L27/12 ,  H01L23/66 ,  H01L29/786

CPC classification number: H01L27/1222 ,  G06K19/0723 ,  H01L23/5387 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78648 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.

公开(公告)号：US09515065B2

公开(公告)日：2016-12-06

申请号：US14636264

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H03K17/16 ,  H03K17/30 ,  H01L27/02 ,  G09G3/32 ,  G09G3/36 ,  G11C19/28 ,  H02H9/04 ,  H01L27/12

CPC classification number: H01L27/0266 ,  G09G3/3283 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2330/04 ,  G11C19/28 ,  H01L27/1225 ,  H02H9/044 ,  Y10T29/49117 ,  Y10T428/24364 ,  Y10T428/24372 ,  Y10T428/2438

Abstract: Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced.

公开(公告)号：US09502483B2

公开(公告)日：2016-11-22

申请号：US15132332

申请日：2016-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L27/32 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2 ⁢ ⁢ Id μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ ⁢ ⁢ Vth 2  Δ ⁢ ⁢ Vth  ≦ ( 1 + n 100 - 1 ) * A * L / W .

公开(公告)号：US09490370B2

公开(公告)日：2016-11-08

申请号：US14873278

申请日：2015-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C16/04 ,  H01L27/105 ,  H01L27/12 ,  H01L27/108 ,  H01L27/11 ,  H01L49/02

CPC classification number: H01L29/7869 ,  G11C16/0425 ,  H01L27/105 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10805 ,  H01L27/11 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/11563 ,  H01L27/11568 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

Abstract: The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.

公开(公告)号：US09485883B2

公开(公告)日：2016-11-01

申请号：US13962307

申请日：2013-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: H05K7/00 ,  G06Q50/22 ,  A61B5/00 ,  H05K1/11 ,  G06F19/00 ,  A61B5/07

CPC classification number: H04B1/1607 ,  A61B5/0002 ,  A61B5/0031 ,  A61B5/07 ,  A61B5/076 ,  A61B2560/0219 ,  A61B2562/166 ,  G06F19/00 ,  G06F19/3418 ,  G06Q50/22 ,  H01L23/60 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6677 ,  H04B13/005 ,  H05K1/118 ,  H05K7/00

Abstract: A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.