公开(公告)号：US6162705A

公开(公告)日：2000-12-19

申请号：US26118

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. A step of increasing a built-in energy state of the substrate is also included.

公开(公告)号：US6159825A

公开(公告)日：2000-12-12

申请号：US26113

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

公开(公告)号：US6013573A

公开(公告)日：2000-01-11

申请号：US804407

申请日：1997-02-21

Applicant: Takayuki Yagi

Inventor： Takayuki Yagi

IPC: G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  G01B7/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  G01Q70/16 ,  G02B21/00 ,  G11B9/14 ,  H01L21/764 ,  H01L29/84

CPC classification number: B81C1/00142 ,  H01L21/764 ,  B81C2201/017 ,  B81C2201/0191

Abstract: An air bridge type structure of a bridge shape which joins to a substrate or micro-structure is manufactured by forming an air bridge type structure on a first substrate and transferring the air bridge type structure to a second substrate and/or a micro-structure formed on the second substrate. A mold substrate, comprising a recessed portion provided on the surface of the mold substrate and a peeling layer formed on the recessed portion, is used for formation of the air bridge type structure. A micro-structure can be supported by the air bridge type structure, for example, a probe for detecting tunneling current or micro-force, supported by the air bridge type structure. Accordingly, electrical connection between structures and the substrate or between the structures one to another can be performed, even if there is undercutting underneath the structures. Film stress generated upon formation of air bridge type structures can be avoided, and increasing of productivity and lowering of costs can be simultaneously achieved.

Abstract translation: 通过在第一基板上形成空气桥型结构并将空气桥型结构转移到形成的第二基板和/或微结构来制造与基板或微结构连接的桥接形状的气桥式结构 在第二基板上。 模具基板包括设置在模具基板的表面上的凹部和形成在凹部上的剥离层，用于形成气桥式结构。 微型结构可以由气桥式结构支撑，例如用于检测由气桥式结构支撑的隧道电流或微力的探针。 因此，即使结构下面存在底切，也可以执行结构与基板之间或结构之间的电连接。 可以避免在形成气桥式结构时产生的薄膜应力，同时可以实现生产率的提高和成本的降低。

公开(公告)号：US6013567A

公开(公告)日：2000-01-11

申请号：US305824

申请日：1999-05-05

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US6013563A

公开(公告)日：2000-01-11

申请号：US26034

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US5985742A

公开(公告)日：1999-11-16

申请号：US26015

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US5866021A

公开(公告)日：1999-02-02

申请号：US713228

申请日：1996-09-12

Applicant: Takayuki Yagi ,  Tsutomu Ikeda ,  Yasuhiro Shimada

Inventor： Takayuki Yagi ,  Tsutomu Ikeda ,  Yasuhiro Shimada

IPC: G01N37/00 ,  B81B3/00 ,  B81C1/00 ,  G01B7/34 ,  G01N27/00 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q60/38 ,  G01Q70/18 ,  G11B9/14 ,  H01J9/02 ,  B44C1/22

CPC classification number: G01Q70/16 ,  B81C1/00111 ,  B82Y35/00 ,  H01J9/025 ,  B81B2201/12 ,  B81C2201/0191

Abstract: A micro-tip is manufactured by forming a recess portion on a first substrate consisting of monocrystalline silicon for forming a tip. A peeling layer is formed on the recess portion, and contact layer is formed on at least a portion other than the peeling layer on the substrate. A tip material layer is formed on the peeling layer and the contact layer. The tip material layer on the peeling layer is transferred onto a second substrate.

Abstract translation: 通过在由用于形成尖端的单晶硅组成的第一衬底上形成凹部来制造微尖端。 在凹部上形成剥离层，在基板上的剥离层以外的至少一部分上形成接触层。 在剥离层和接触层上形成尖端材料层。 剥离层上的尖端材料层被转印到第二基板上。

公开(公告)号：US5334342A

公开(公告)日：1994-08-02

申请号：US58521

申请日：1993-05-04

Applicant: Alan B. Harker ,  Jeffrey F. DeNatale ,  Patrick J. Hood ,  John F. Flintoff

Inventor： Alan B. Harker ,  Jeffrey F. DeNatale ,  Patrick J. Hood ,  John F. Flintoff

IPC: B81B3/00 ,  B81C99/00 ,  C23C16/02 ,  C23C16/27 ,  G02B1/11 ,  G03F7/00 ,  B29C33/76 ,  C23C16/22

CPC classification number: G02B1/118 ,  B81C1/00111 ,  B81C1/00198 ,  B81C1/0038 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  G03F7/00 ,  B81B2201/035 ,  B81B2201/047 ,  B81C2201/0191 ,  B81C2201/056 ,  Y10T428/30

Abstract: A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form surface relief features, such as "moth eye" surfaces, and microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

Abstract translation: 将高温抗蚀剂工艺与用于生产需要高温沉积环境的材料（例如金刚石膜）的微光刻图案组合。 对于金刚石膜，可以使用高温氮化硅抗蚀剂用于硅衬底的微光刻图案以提供金刚石成核位点的均匀分布并且改善金刚石膜对衬底的粘附。 在去除氮化硅抗蚀剂之后，在整个衬底上沉积金刚石膜，保持在成核位置建立的细晶粒成核几何形状。 该过程可以扩展以形成具有理想的硬度，耐磨性，导热性的特征的表面浮雕特征，例如“蛾眼”表面和细晶粒多晶金刚石的微观结构，例如可旋转的微观尺寸和表面浮雕图案 ，化学惰性，抗反射性和低摩擦系数。