公开(公告)号：US20090073398A1

公开(公告)日：2009-03-19

申请号：US12210514

申请日：2008-09-15

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/52 ,  G03B27/72

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US20060146304A1

公开(公告)日：2006-07-06

申请号：US11294860

申请日：2005-12-05

申请人： Markus Schwab ,  Aksel Goehnermeier ,  Toralf Gruner ,  Tammo Uitterdijk

发明人： Markus Schwab ,  Aksel Goehnermeier ,  Toralf Gruner ,  Tammo Uitterdijk

IPC分类号： G03B27/42

CPC分类号： G03B27/42 ,  G03F7/70258

摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system comprises illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.

摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。

公开(公告)号：US09110383B2

公开(公告)日：2015-08-18

申请号：US13299062

申请日：2011-11-17

申请人： Aksel Goehnermeier

发明人： Aksel Goehnermeier

IPC分类号： G03B27/54 ,  G03B27/72 ,  G03F7/20

CPC分类号： G03F7/70566 ,  G03F7/701 ,  G03F7/70141 ,  G03F7/70425 ,  G03F7/70433

摘要： The disclosure provides a projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask. The mask has a first pattern area with a first subpattern, and at least one second pattern area, arranged laterally offset from the first pattern area, with a second subpattern. The first subpattern is irradiated during a first illumination time interval with a first angular distribution, adapted to the first subpattern, of the illumination radiation. Thereafter, the second subpattern is irradiated during the second illumination time interval with a second angular distribution, adapted to the second subpattern, of the illumination radiation, said second angular distribution differing from the first angular distribution.

摘要翻译： 本公开提供了一种投影曝光方法，用于用掩模图案的至少一个图像曝光辐射敏感基板。 掩模具有带有第一子图案的第一图案区域和与第一图案区域横向错开布置的至少一个第二图案区域，具有第二子图案。 在第一照明时间间隔内照射第一子图案，其具有适于第一子图案的照明辐射的第一角度分布。 此后，第二子图案在第二照明时间间隔期间以适合于第二子图案的照明辐射的第二角度分布被照射，所述第二角度分布与第一角度分布不同。

公开(公告)号：US08542342B2

公开(公告)日：2013-09-24

申请号：US12408577

申请日：2009-03-20

申请人： Markus Schwab ,  Aksel Goehnermeier ,  Toralf Gruner ,  Tammo Uitterdijk

发明人： Markus Schwab ,  Aksel Goehnermeier ,  Toralf Gruner ,  Tammo Uitterdijk

IPC分类号： G03B27/42 ,  G03B27/54 ,  G03B27/32

CPC分类号： G03B27/42 ,  G03F7/70258

摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.

摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。

公开(公告)号：US08325322B2

公开(公告)日：2012-12-04

申请号：US12700122

申请日：2010-02-04

申请人： Markus Hauf ,  Ulrich Schoenhoff ,  Payam Tayebati ,  Michael Thier ,  Tilmann Heil ,  Ole Fluegge ,  Arif Kazi ,  Alexander Sauerhoefer ,  Gerhard Focht ,  Jochen Weber ,  Toralf Gruner ,  Aksel Goehnermeier ,  Dirk Hellweg

发明人： Markus Hauf ,  Ulrich Schoenhoff ,  Payam Tayebati ,  Michael Thier ,  Tilmann Heil ,  Ole Fluegge ,  Arif Kazi ,  Alexander Sauerhoefer ,  Gerhard Focht ,  Jochen Weber ,  Toralf Gruner ,  Aksel Goehnermeier ,  Dirk Hellweg

IPC分类号： G03B27/68 ,  G03B27/52

CPC分类号： G02B7/008 ,  G02B7/1815 ,  G02B26/06 ,  G02B27/0025 ,  G03F7/70191 ,  G03F7/70308 ,  G03F7/70825 ,  G03F7/70891

摘要： The disclosure relates to an optical correction device with thermal actuators for influencing the temperature distribution in the optical correction device. The optical correction device is constructed from at least two partial elements which differ with regard to their ability to transport heat. Furthermore, the disclosure relates to methods for influencing the temperature distribution in an optical element.

摘要翻译： 本发明涉及具有用于影响光学校正装置中的温度分布的热致动器的光学校正装置。 光学校正装置由至少两个部分元件构成，这些部分元素关于其传送热量的能力而不同。 此外，本公开涉及影响光学元件中的温度分布的方法。

公开(公告)号：US20120069318A1

公开(公告)日：2012-03-22

申请号：US13299062

申请日：2011-11-17

申请人： Aksel Goehnermeier

发明人： Aksel Goehnermeier

IPC分类号： G03B27/32

CPC分类号： G03F7/70566 ,  G03F7/701 ,  G03F7/70141 ,  G03F7/70425 ,  G03F7/70433

摘要： The disclosure provides a projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask. The mask has a first pattern area with a first subpattern, and at least one second pattern area, arranged laterally offset from the first pattern area, with a second subpattern. The first subpattern is irradiated during a first illumination time interval with a first angular distribution, adapted to the first subpattern, of the illumination radiation. Thereafter, the second subpattern is irradiated during the second illumination time interval with a second angular distribution, adapted to the second subpattern, of the illumination radiation, said second angular distribution differing from the first angular distribution.

摘要翻译： 本公开提供了一种投影曝光方法，用于用掩模图案的至少一个图像曝光辐射敏感基板。 掩模具有带有第一子图案的第一图案区域和与第一图案区域横向错开布置的至少一个第二图案区域，具有第二子图案。 在第一照明时间间隔内照射第一子图案，其具有适于第一子图案的照明辐射的第一角度分布。 此后，第二子图案在第二照明时间间隔期间以适合于第二子图案的照明辐射的第二角度分布被照射，所述第二角度分布与第一角度分布不同。

公开(公告)号：US20110304926A1

公开(公告)日：2011-12-15

申请号：US13217793

申请日：2011-08-25

申请人： Ralf Mueller ,  Aksel Goehnermeier ,  Wolfgang Singer

发明人： Ralf Mueller ,  Aksel Goehnermeier ,  Wolfgang Singer

IPC分类号： G02B17/08

CPC分类号： G02B17/08 ,  G02B27/286 ,  G03F7/70225 ,  G03F7/70566

摘要： A projection objective has an object surface and an image surface. The projection objective includes a plurality of optical elements arranged along an optical axis and configured so that during operation the projection objective images a pattern arranged in the object surface onto the image surface. The optical elements include a concave mirror a first deflecting mirror and a second deflecting mirror. The first deflecting mirror is tilted relative to the optical axis by a first tilt angle, t1, about a first tilt axis so that during operation the first deflecting mirror deflects light at a wavelength λ from the object surface towards the concave mirror or deflects light at λ from the concave mirror towards the image surface. The second deflecting mirror is tilted relative to the optical axis by a second tilt angle, t2, about a second tilt axis. For a pattern including a grating having a line width of 45 nm and a pitch, p, the projection objective images the pattern to the image surface such that for a first orientation of the pattern and a second orientation of the pattern a difference, ΔHV, between the imaged line width is 1.2 nm or less for 100 nm

摘要翻译： 投影物镜具有物体表面和图像表面。 投影物镜包括沿着光轴布置的多个光学元件，并且被配置为使得在操作期间，投影物镜将布置在物体表面中的图案图像映像到图像表面上。 光学元件包括凹面镜，第一偏转镜和第二偏转镜。 第一偏转镜相对于光轴相对于第一倾斜轴倾斜第一倾斜角度t1，使得在操作期间，第一偏转镜将波长λ的物体从物体表面偏转到凹面镜，或使光线偏转 λ从凹面镜朝向图像表面。 第二偏转镜相对于光轴倾斜第二倾斜角t2，约为第二倾斜轴。 对于包括具有45nm的线宽度和间距p的光栅的图案，投影物镜将图案图像到图像表面，使得对于图案的第一取向和图案的第二取向而言，Dgr; HV，对于100nm

公开(公告)号：US08027088B2

公开(公告)日：2011-09-27

申请号：US11964527

申请日：2007-12-26

申请人： Ralf Mueller ,  Aksel Goehnermeier ,  Wolfgang Singer

发明人： Ralf Mueller ,  Aksel Goehnermeier ,  Wolfgang Singer

IPC分类号： G02B27/28 ,  G02B5/30

CPC分类号： G02B17/08 ,  G02B27/286 ,  G03F7/70225 ,  G03F7/70566

摘要： In general, in one aspect, the invention features a catadioptric projection objective having a plurality of optical elements arranged along an optical axis to image a pattern arranged in an object surface of the projection objective onto an image surface of the projection objective. The optical elements include a concave mirror, a first deflecting mirror tilted relative to the optical axis and a second deflecting mirror. The catadioptric projection objective can image patterns including sub-patterns oriented in various directions such that line width variations due to differences of orientation of sub-patterns are largely avoided.

摘要翻译： 通常，一方面，本发明的特征在于一种反射折射投影物镜，其具有沿着光轴布置的多个光学元件，以将布置在投影物镜的物体表面中的图案成像到投影物镜的图像表面上。 光学元件包括凹面镜，相对于光轴倾斜的第一偏转镜和第二偏转镜。 反射折射投影物镜可以对包括在各个方向上取向的子图案的图案图案进行图像化，从而大大避免了由于子图案的取向差异引起的线宽变化。

公开(公告)号：US20110069296A1

公开(公告)日：2011-03-24

申请号：US12946380

申请日：2010-11-15

申请人： Toralf GRUNER ,  Daniel KRAEHMER ,  Michael TOTZECK ,  Johannes WANGLER ,  Markus BROTSACK ,  Nils DIECKMANN ,  Aksel GOEHNERMEIER ,  Markus SCHWAB ,  Damian FIOLKA ,  Markus ZENZINGER

发明人： Toralf GRUNER ,  Daniel KRAEHMER ,  Michael TOTZECK ,  Johannes WANGLER ,  Markus BROTSACK ,  Nils DIECKMANN ,  Aksel GOEHNERMEIER ,  Markus SCHWAB ,  Damian FIOLKA ,  Markus ZENZINGER

IPC分类号： G03B27/72

CPC分类号： G03F7/70566 ,  G03F7/70108 ,  G03F7/70225 ,  G03F7/70308

摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.

摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。

公开(公告)号：US20050146704A1

公开(公告)日：2005-07-07

申请号：US10949396

申请日：2004-09-27

申请人： Toralf Gruner ,  Daniel Kraehmer ,  Michael Totzeck ,  Johannes Wangler ,  Markus Brotsack ,  Nils Dieckmann ,  Aksel Goehnermeier ,  Markus Schwab ,  Damian Fiolka ,  Markus Zenzinger

发明人： Toralf Gruner ,  Daniel Kraehmer ,  Michael Totzeck ,  Johannes Wangler ,  Markus Brotsack ,  Nils Dieckmann ,  Aksel Goehnermeier ,  Markus Schwab ,  Damian Fiolka ,  Markus Zenzinger

IPC分类号： G03F7/20 ,  G03B27/72

CPC分类号： G03F7/70566 ,  G03F7/70108 ,  G03F7/70225 ,  G03F7/70308

摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.

摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。