公开(公告)号：US09063439B2

公开(公告)日：2015-06-23

申请号：US12624993

申请日：2009-11-24

申请人： Aksel Goehnermeier ,  Daniel Kraehmer ,  Vladimir Kamenov ,  Michael Totzeck

发明人： Aksel Goehnermeier ,  Daniel Kraehmer ,  Vladimir Kamenov ,  Michael Totzeck

IPC分类号： G03B27/68 ,  G03F7/20

CPC分类号： G03F7/70958 ,  G03F7/70308 ,  G03F7/70341 ,  G03F7/70591 ,  G03F7/70941

摘要： A projection objective for applications in microlithography, a microlithography projection exposure apparatus with a projection objective, a microlithographic manufacturing method for microstructured components, and a component manufactured using such a manufacturing method are disclosed. The projection objective includes an optical component configured so that, during use of the projection objective, the optical component generates a stray light component in the exposure field of the projection objective which adapts a parameter of the projection objective to a parameter of a second projection objective. The parameter is the stray light component at the exposure field of the projection objective and/or a variation of the stray light component at the exposure field of the projection objective. The parameter of the second projection objective is a stray light component at an exposure field of the second projection objective and/or a variation of the stray light component at the exposure field of the second projection objective. The second projection objective is different from the projection objective.

摘要翻译： 公开了一种用于微光刻的投影物镜，具有投影物镜的微光刻投影曝光设备，微结构元件的微光刻制造方法以及使用这种制造方法制造的元件。 投影物镜包括一个光学元件，其被构造成使得在投影物镜的使用期间，光学元件在投影物镜的曝光区域中产生杂散光分量，该投射物镜将投射物镜的参数适应于第二投影物镜的参数 。 该参数是在投影物镜的曝光场处的杂散光分量和/或投影物镜的曝光场处的杂散光分量的变化。 第二投影物镜的参数是在第二投影物镜的曝光场处的杂散光分量和/或第二投影物镜的曝光场处的杂散光分量的变化。 第二个投影目标与投影目标不同。

公开(公告)号：US20100195070A1

公开(公告)日：2010-08-05

申请号：US12698242

申请日：2010-02-02

申请人： Ulrich Loering ,  Gerd Reisinger ,  Franz-Josef Stickel ,  Sonja Schneider ,  Johann Trenkler ,  Stefan Kraus ,  Gordon Doering ,  Aksel Goehnermeier

发明人： Ulrich Loering ,  Gerd Reisinger ,  Franz-Josef Stickel ,  Sonja Schneider ,  Johann Trenkler ,  Stefan Kraus ,  Gordon Doering ,  Aksel Goehnermeier

IPC分类号： G03B27/68 ,  G02B9/00 ,  B32B3/00

CPC分类号： G03F7/70983 ,  G03F1/62 ,  G03F7/70308 ,  Y10T428/24612

摘要： A projection objective is disclosed. The projection objective can include a plurality of optical elements arranged to image a pattern from an object field in an object surface of the projection objective to an image field in an image surface of the projection objective with electromagnetic operating radiation from a wavelength band around an operating wavelength λ. The plurality of optical elements can include an optical correction plate that includes a body comprising a material transparent to the operating radiation, the body having a first optical surface, a second optical surface, a plate normal substantially perpendicular to the first and second optical surfaces, and a thickness profile defined as a distance between the first and second optical surfaces measured parallel to the plate normal. The first optical surface can have a non-rotationally symmetric aspheric first surface profile with a first peak-to-valley value PV1>λ. The second optical surface can have a non-rotationally symmetric aspheric second surface profile with a second peak-to-valley value PV2>λ. A thickness of the optical correction plate can vary by less than 0.1*(PV1+PV2)/2 across the optical correction plate.

摘要翻译： 公开了一种投影物镜。 投影物镜可以包括多个光学元件，其布置成将图案从投影物镜的物体表面中的物场映射到投影物镜的图像表面中的图像场，其中电磁操作辐射来自围绕操作的波长带 波长λ。 多个光学元件可以包括光学校正板，其包括主体，该主体包括对操作辐射透明的材料，该主体具有第一光学表面，第二光学表面，基本上垂直于第一和第二光学表面的板法线， 以及限定为平行于板法线测量的第一和第二光学表面之间的距离的厚度分布。 第一光学表面可以具有第一峰谷值PV1>λ的非旋转对称非球面第一表面轮廓。 第二光学表面可以具有非旋转对称的非球面第二表面轮廓，具有第二峰谷值PV2>λ。 光学校正板的厚度可以在光学校正板上变化小于0.1 *（PV1 + PV2）/ 2。

公开(公告)号：US20090190116A1

公开(公告)日：2009-07-30

申请号：US12408577

申请日：2009-03-20

申请人： Markus Schwab ,  Aksel Goehnermeier ,  Toralf Gruner ,  Tammo Uitterdijk

发明人： Markus Schwab ,  Aksel Goehnermeier ,  Toralf Gruner ,  Tammo Uitterdijk

IPC分类号： G03B27/42 ,  G03B27/54

CPC分类号： G03B27/42 ,  G03F7/70258

摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.

摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。

公开(公告)号：US20090053618A1

公开(公告)日：2009-02-26

申请号：US11817903

申请日：2005-07-14

申请人： Aksel Goehnermeier

发明人： Aksel Goehnermeier

IPC分类号： G03F7/20 ,  G03F1/00 ,  G03B27/72

CPC分类号： G03F7/70566 ,  G03F7/701 ,  G03F7/70141 ,  G03F7/70425 ,  G03F7/70433

摘要： In the case of a projection exposure method for exposing a radiation-sensitive substrate, arranged in the region of an image surface of a projection objective, with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective, a mask is arranged in the region of the object surface of the projection objective, the mask having a first pattern area with a first subpattern, and at least one second pattern area, arranged laterally offset from the first pattern area, with a second subpattern. The mask is scanned by relative movement between the mask and the illumination field of the illumination system in such a way that initially the first subpattern and thereafter the second subpattern is irradiated with the illumination radiation of the illumination field. The first subpattern is irradiated during a first illumination time interval with a first angular distribution, adapted to the first subpattern, of the illumination radiation. Thereafter, the second subpattern is irradiated during the second illumination time interval with a second angular distribution, adapted to the second subpattern, of the illumination radiation, said second angular distribution differing from the first angular distribution.

摘要翻译： 在投影曝光方法的情况下，用于曝光放射敏感性基板，布置在投影物镜的图像表面的区域中，其中至少一个掩模图案布置在该物体表面的区域中 投影物镜，掩模布置在投影物镜的物体表面的区域中，掩模具有第一图案区域和第一子图案，以及至少一个第二图案区域，其布置在与第一图案区域横向偏移的位置， 第二个子模式。 通过掩模和照明系统的照明场之间的相对运动来扫描掩模，使得最初第一子图案和其后的第二子图案被照射场的照明辐射照射。 在第一照明时间间隔内照射第一子图案，其具有适于第一子图案的照明辐射的第一角度分布。 此后，第二子图案在第二照明时间间隔期间以适合于第二子图案的照明辐射的第二角度分布被照射，所述第二角度分布与第一角度分布不同。

公开(公告)号：US20080158665A1

公开(公告)日：2008-07-03

申请号：US11964527

申请日：2007-12-26

申请人： Ralf Mueller ,  Aksel Goehnermeier ,  Wolfgang Singer

发明人： Ralf Mueller ,  Aksel Goehnermeier ,  Wolfgang Singer

IPC分类号： G02B17/08 ,  G02B5/08 ,  G03B27/54 ,  G02B17/06

CPC分类号： G02B17/08 ,  G02B27/286 ,  G03F7/70225 ,  G03F7/70566

摘要： In general, in one aspect, the invention features a catadioptric projection objective having a plurality of optical elements arranged along an optical axis to image a pattern arranged in an object surface of the projection objective onto an image surface of the projection objective. The optical elements include a concave mirror; a first deflecting mirror tilted relative to the optical axis by a first tilt angle t1 about a first tilt axis to deflect light from the object surface towards the concave mirror or to deflect light from the concave mirror towards the image surface; and a second deflecting mirror tilted relative to the optical axis by a second tilt angle t2 about a second tilt axis. The first deflecting mirror has a first reflective coating with reflectivity Rs1(α1) for s-polarized light and a reflectivity Rp1(α1) for p-polarized light incident on the first deflecting mirror at first angles of incidence α1 from a first range of angles of incidence according to (t1−Δα1)≦α1≦(t1+Δα1). The second deflecting mirror has a second reflective coating with a reflectivity Rs2(α2) for s-polarized light and a reflectivity Rp2(α2) for p-polarized light incident on the second deflecting mirror at second angles of incidence α2 from a second range of angles of incidence according to (t2−Δα2)≦α2≦(t2+Δα2). A first reflectivity sum, RsPE, for s-polarized light of polar edge rays accumulated upon reflection on the first and second deflecting mirrors is substantially equal to a second reflectivity sum, RpE for p-polarized light of equatorial edge rays accumulated upon reflection on the first and second deflecting mirrors.

公开(公告)号：US20080036982A1

公开(公告)日：2008-02-14

申请号：US11547909

申请日：2005-04-11

申请人： Ulrich Wegmann ,  Gerd Reisinger ,  Manfred Maul ,  Paul Graeupner ,  Martin Schriever ,  Aksel Goehnermeier

发明人： Ulrich Wegmann ,  Gerd Reisinger ,  Manfred Maul ,  Paul Graeupner ,  Martin Schriever ,  Aksel Goehnermeier

IPC分类号： G03B27/42 ,  G03B27/52

CPC分类号： G03F7/70466 ,  G03F7/2022 ,  G03F7/70258 ,  G03F7/70266 ,  G03F7/706

摘要： 1. Method for patterning a substrate using multiple exposure.2.1. The invention relates to a method for patterning a substrate using exposure processes of an adjustable optical system, a multiple exposure being used for producing a structure image on the substrate.2.2. According to the invention, for at least one of the plurality of exposures, the imaging quality of the optical system is determined by means of a respective measurement step and at least one parameter of the optical system that influences the imaging quality is set depending on this.2.3. Use e.g. for the patterning of semiconductor wafers in microlithography projection exposure apparatuses.

摘要翻译： 1.使用多次曝光来图案化衬底的方法。 2.1。 本发明涉及使用可调节光学系统的曝光工艺对衬底进行图案化的方法，多次曝光用于在衬底上产生结构图像。 2.2。 根据本发明，对于多个曝光中的至少一个，通过相应的测量步骤确定光学系统的成像质量，并且根据这一点设置影响成像质量的光学系统的至少一个参数 。 2.3。 使用例如 用于微光刻投影曝光设备中的半导体晶片的图案化。

公开(公告)号：US08081295B2

公开(公告)日：2011-12-20

申请号：US11817903

申请日：2005-07-14

申请人： Aksel Goehnermeier

发明人： Aksel Goehnermeier

IPC分类号： G03B27/72 ,  G03B27/54

CPC分类号： G03F7/70566 ,  G03F7/701 ,  G03F7/70141 ,  G03F7/70425 ,  G03F7/70433

摘要： In the case of a projection exposure method for exposing a radiation-sensitive substrate, arranged in the region of an image surface of a projection objective, with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective, a mask is arranged in the region of the object surface of the projection objective, the mask having a first pattern area with a first subpattern, and at least one second pattern area, arranged laterally offset from the first pattern area, with a second subpattern. The mask is scanned by relative movement between the mask and the illumination field of the illumination system in such a way that initially the first subpattern and thereafter the second subpattern is irradiated with the illumination radiation of the illumination field. The first subpattern is irradiated during a first illumination time interval with a first angular distribution, adapted to the first subpattern, of the illumination radiation. Thereafter, the second subpattern is irradiated during the second illumination time interval with a second angular distribution, adapted to the second subpattern, of the illumination radiation, said second angular distribution differing from the first angular distribution.

摘要翻译： 在投影曝光方法的情况下，用于曝光放射敏感性基板，布置在投影物镜的图像表面的区域中，其中至少一个掩模图案布置在该物体表面的区域中 投影物镜，掩模布置在投影物镜的物体表面的区域中，掩模具有第一图案区域和第一子图案，以及至少一个第二图案区域，其布置在与第一图案区域横向偏移的位置， 第二个子模式。 通过掩模和照明系统的照明场之间的相对运动来扫描掩模，使得最初第一子图案和其后的第二子图案被照射场的照明辐射照射。 在第一照明时间间隔内照射第一子图案，其具有适于第一子图案的照明辐射的第一角度分布。 此后，第二子图案在第二照明时间间隔期间以适合于第二子图案的照明辐射的第二角度分布被照射，所述第二角度分布与第一角度分布不同。

公开(公告)号：US07847921B2

公开(公告)日：2010-12-07

申请号：US12177715

申请日：2008-07-22

申请人： Toralf Gruner ,  Daniel Kraehmer ,  Michael Totzeck ,  Johannes Wangler ,  Markus Brotsack ,  Nils Dieckmann ,  Aksel Goehnermeier ,  Markus Schwab ,  Damian Fiolka ,  Markus Zenzinger

发明人： Toralf Gruner ,  Daniel Kraehmer ,  Michael Totzeck ,  Johannes Wangler ,  Markus Brotsack ,  Nils Dieckmann ,  Aksel Goehnermeier ,  Markus Schwab ,  Damian Fiolka ,  Markus Zenzinger

IPC分类号： G03B27/72 ,  G03B27/54

CPC分类号： G03F7/70566 ,  G03F7/70108 ,  G03F7/70225 ,  G03F7/70308

摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.

摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。

公开(公告)号：US20090244509A1

公开(公告)日：2009-10-01

申请号：US12409961

申请日：2009-03-24

申请人： Guido Limbach ,  Franz Sorg ,  Armin Schoeppach ,  Ulrich Weber ,  Ulrich Loering ,  Dirk Hellweg ,  Peter Meyer ,  Stefan Xalter ,  Jens Kugler ,  Bernhard Gellrich ,  Stefan Hembacher ,  Bernhard Geuppert ,  Aksel Goehnermeier

发明人： Guido Limbach ,  Franz Sorg ,  Armin Schoeppach ,  Ulrich Weber ,  Ulrich Loering ,  Dirk Hellweg ,  Peter Meyer ,  Stefan Xalter ,  Jens Kugler ,  Bernhard Gellrich ,  Stefan Hembacher ,  Bernhard Geuppert ,  Aksel Goehnermeier

IPC分类号： G03B27/54

CPC分类号： G02B7/004 ,  G02B27/0068 ,  G03F7/70191 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/70825

摘要： The disclosure relates to an optical system, such as a projection exposure apparatus for semiconductor lithography, including a manipulable correction arrangement for reducing image aberrations. In some embodiments, the system includes at least one manipulator configured to reduce image aberrations. The manipulator can include at least one optical element which can be manipulated by at least one actuator. The manipulator can be formed in changeable fashion together with an actuator.

摘要翻译： 本发明涉及一种光学系统，例如用于半导体光刻的投影曝光装置，包括用于减小图像像差的可操作的校正装置。 在一些实施例中，系统包括被配置为减少图像像差的至少一个操纵器。 操纵器可以包括至少一个可由至少一个致动器操纵的光学元件。 操纵器可以与致动器一起以可变的方式形成。

公开(公告)号：US20090073412A1

公开(公告)日：2009-03-19

申请号：US12206550

申请日：2008-09-08

申请人： Alexandra PAZIDIS ,  Aksel Goehnermeier

发明人： Alexandra PAZIDIS ,  Aksel Goehnermeier

IPC分类号： G03B27/54

CPC分类号： G03F7/70916 ,  G03F7/70308 ,  G03F7/70983

摘要： An objective and a method for operating an objective, in particular a projection objective or an illumination objective for microlithography for imaging a reticle onto a wafer, with a plurality of optical elements that are arranged along a ray path, wherein at least one optical element of a first kind (1) is provided, which is irradiated only partially by a ray bundle, wherein the one or more optical element(s) of the first kind are rotatably mounted or positionable about the optical axis or an axis parallel thereto, wherein, for each optical element of the first kind at least two mounting positions are provided, and wherein the rotation angle between the two mounting positions is defined by the surface (7) irradiated by the ray bundle such that, in the various mounting positions, the surfaces irradiated by the ray path do not overlap.

摘要翻译： 一种用于操作物镜的目的和方法，特别是具有沿着光线路径布置的多个光学元件的用于将光罩成像到晶片上的微光刻的投影物镜或照明物镜，其中至少一个光学元件 提供第一种（1），其仅部分地被射线束照射，其中第一类的一个或多个光学元件围绕光轴或平行于其的轴线可旋转地安装或定位，其中， 对于第一种的每个光学元件，提供至少两个安装位置，并且其中两个安装位置之间的旋转角度被由射线束照射的表面（7）限定，使得在各种安装位置，表面 由射线路径照射不重叠。