公开(公告)号：US20060110939A1

公开(公告)日：2006-05-25

申请号：US11327612

申请日：2006-01-06

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/31

CPC分类号： H01L21/31608 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31662

摘要： A method is provided for additionally oxidizing a thin-film oxide. The method includes: providing a substrate; depositing an MyOx (M oxide) layer overlying the substrate, where M is a solid element having an oxidation state in a range of +2 to +5; treating the MyOx layer to a high density plasma (HDP) source; and, forming an MyOk layer in response to the HDP source, where k>x. In one aspect, the method further includes decreasing the concentration of oxide charge in response to forming the MyOk layer. In another aspect, the MyOx layer is deposited with an impurity N, and the method further includes creating volatile N oxides in response to forming the MyOk layer. For example, the impurity N may be carbon and the method creates a volatile carbon oxide.

摘要翻译： 提供了另外氧化薄膜氧化物的方法。 该方法包括：提供衬底; 沉积覆盖衬底的MyOx（M氧化物）层，其中M是具有+2至+5范围内的氧化态的固体元素; 将MyOx层处理成高密度等离子体（HDP）源; 并且响应于HDP源形成MyOk层，其中k> x。 在一个方面，该方法还包括响应于形成MyOk层而降低氧化物电荷的浓度。 在另一方面，MyOx层沉积有杂质N，并且该方法还包括响应于形成MyOk层而产生挥发性N氧化物。 例如，杂质N可以是碳，并且该方法产生挥发性碳氧化物。

公开(公告)号：US20060068532A1

公开(公告)日：2006-03-30

申请号：US10953913

申请日：2004-09-28

申请人： Paul Schuele ,  Apostolos Voutsas

发明人： Paul Schuele ,  Apostolos Voutsas

IPC分类号： H01L21/84

CPC分类号： G09G3/20 ,  G09G3/3208 ,  G09G3/3659 ,  G09G2300/08 ,  G09G2310/0262 ,  H01L29/78648

摘要： A dual-gate thin film transistor (DG-TFT) and associated fabrication method are provided. The method comprises: forming a first (back) gate in a first horizontal plane; forming source/drain (S/D) regions and an intervening channel region in a second horizontal plane, overlying the first plane; and, forming a second (top) gate in a third horizontal plane, overlying the second plane. The S/D regions and intervening channel region have a combined length, smaller than the length of the first gate. A substrate insulating layer is formed over the substrate, made from a material such as SiO2. A first gate insulation layer is formed over the first gate. Amorphous silicon (a-Si) is deposited over the first gate insulation layer and crystallized. The S/D and channel regions are formed from the crystallized Si layer. A second gate oxide layer is formed over the channel region.

摘要翻译： 提供了双栅极薄膜晶体管（DG-TFT）和相关制造方法。 该方法包括：在第一水平面中形成第一（后）栅极; 在第一平面上形成源极/漏极（S / D）区域和在第二水平面中的中间沟道区域; 并且在第三水平面上形成覆盖第二平面的第二（顶部）门。 S / D区域和中间沟道区域具有小于第一栅极的长度的组合长度。 在衬底上形成衬底绝缘层，由诸如SiO 2的材料制成。 在第一栅极上形成第一栅极绝缘层。 非晶硅（a-Si）沉积在第一栅绝缘层上并结晶。 S / D和沟道区域由结晶的Si层形成。 在沟道区上形成第二栅氧化层。

公开(公告)号：US06660576B2

公开(公告)日：2003-12-09

申请号：US10096293

申请日：2002-03-11

申请人： Apostolos Voutsas ,  Yasuhiro Mitiani ,  Mark A. Crowder

发明人： Apostolos Voutsas ,  Yasuhiro Mitiani ,  Mark A. Crowder

IPC分类号： H01L2184

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672

摘要： A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor substrate; creating a first condition in the first area of the semiconductor film; selecting a second mask having a second mask pattern; projecting the laser beam through the second mask to anneal a second area of the semiconductor film; and, creating a second condition in the second area of the semiconductor film, different than the first condition. More specifically, when the substrate material is silicon, the first and second conditions concern the creation of crystalline material with a quantitative measure of lattice mismatch between adjacent crystal domains. For example, the lattice mismatch between adjacent crystal domains can be measured as a number of high-angle grain boundaries per area, where high-angle grain boundaries are defined as boundaries separating adjacent crystal domains with a crystal lattice mismatch angle in the range between 15 and 90 degrees. To continue the example, forming a first number of high-angle grain boundaries per area in the first area may include forming adjacent high-angle grain boundaries separated by a first distance, while forming a second number of high-angle grain boundaries per area in the second area may include forming adjacent high-angle grain boundaries separated by a second distance, greater than the first distance.

摘要翻译： 提供了一种制造可变质量基板材料的基板和方法。 该方法包括：选择具有第一掩模图案的第一掩模; 将激光束投射穿过所述第一掩模以退火半导体衬底的第一区域; 在半导体膜的第一区域中形成第一条件; 选择具有第二掩模图案的第二掩模; 将激光束投影通过第二掩模，以退火半导体膜的第二区域; 并且在半导体膜的第二区域中产生与第一条件不同的第二条件。 更具体地，当衬底材料是硅时，第一和第二条件涉及通过定量测量相邻晶体畴之间的晶格失配来产生结晶材料。 例如，相邻晶体畴之间的晶格失配可以作为每个面积的高角度晶界的数量来测量，其中高角度晶界被定义为将相邻晶体域之间的晶界分离的边界分隔在15 和90度。 为了继续该示例，在第一区域中每区域形成第一数量的高角度晶界可以包括形成分开第一距离的相邻高角度晶界，同时在每个区域形成第二数量的高角度晶界 第二区域可以包括形成大于第一距离的相隔的第二距离的相邻高角度晶界。

公开(公告)号：US06579425B2

公开(公告)日：2003-06-17

申请号：US09906881

申请日：2001-07-16

申请人： Apostolos Voutsas ,  Yukihiko Nakata

发明人： Apostolos Voutsas ,  Yukihiko Nakata

IPC分类号： C23C1435

CPC分类号： C23C14/568 ,  C23C14/165

摘要： A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon film, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, without breaking the vacuum seat to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.

摘要翻译： 提供了一种系统和方法，以顺次沉积邻近薄硅膜的二氧化硅基底涂层阻挡层，以最小化水和-OH自由基的形成。 底涂层和薄硅膜都被溅射以消除氢化学物质。 此外，依次进行溅射处理，而不破坏真空座，以使沉积步骤之间常规发生的底涂层中的水的吸收最小化。 该方法消除了所需的工艺步骤的总数，因为在沉积薄硅膜之前不再需要对底涂层进行炉退火，并且在沉积薄硅之后不再需要脱氢退火步骤 电影。

公开(公告)号：US09063353B2

公开(公告)日：2015-06-23

申请号：US13714073

申请日：2012-12-13

申请人： Akinori Hashimura ,  Douglas Tweet ,  Apostolos Voutsas

发明人： Akinori Hashimura ,  Douglas Tweet ,  Apostolos Voutsas

IPC分类号： G02F1/03 ,  G02F1/00 ,  G02B5/00 ,  B82Y20/00

CPC分类号： G02F1/0018 ,  B82Y20/00 ,  G02B5/008 ,  G02F1/133553 ,  G02F1/1393 ,  G02F2202/36 ,  G02F2203/055 ,  G02F2203/10 ,  Y10S977/773 ,  Y10S977/834

摘要： A plasmonic optical device is provided operating in near ultra violet (UV) and visible wavelengths of light. The optical device is made from a substrate and nanoparticles. The nanoparticles have a core with a negative real value relative permittivity of absolute value greater than 10 in a first range of wavelengths including near UV and visible wavelengths of light, and a shell with an imaginary relative permittivity of less than 5 in the first range of wavelengths. A dielectric overlies the substrate, and is embedded with the nanoparticles. If the substrate is reflective, a reflective optical filter is formed. If the substrate is transparent, the filter is transmissive. In one aspect, the dielectric is a tunable medium (e.g., liquid crystal) having an index of refraction responsive to an electric field. The tunable medium is interposed between a first electrode and a second electrode.

摘要翻译： 提供等离子体激发光学器件，其工作在近紫外（UV）和可见光波长的光。 光学器件由衬底和纳米颗粒制成。 所述纳米颗粒具有在包括近紫外和可见光波长的第一波长范围内具有大于10的绝对值的绝对值相对介电常数的核，并且在第一范围内具有小于5的假想相对介电常数的壳 波长。 电介质覆盖在衬底上，并且嵌入有纳米颗粒。 如果基板是反射的，则形成反射式滤光器。 如果基板是透明的，则滤光器是透射的。 在一个方面，电介质是具有响应于电场的折射率的可调介质（例如，液晶）。 可调介质介于第一电极和第二电极之间。

公开(公告)号：US20070155137A1

公开(公告)日：2007-07-05

申请号：US11698623

申请日：2007-01-26

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/20

CPC分类号： G02B1/10 ,  C23C16/308 ,  C23C16/509 ,  G02B1/11

摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.

摘要翻译： 提供了高密度等离子体法，用于形成SiO x N N Y Y薄膜。 该方法提供衬底并引入硅（Si）前体。 使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。 结果，形成SiO（X + Y <2和Y> 0）的SiO N 薄膜。 SiO 2薄膜可以是化学计量的或非化学计量的。 SiO 2薄膜可以分级，这意味着X和Y的值随着SiO 2 X N的厚度而变化， SUB> Y 薄膜。 此外，该方法能够实现SiO 2薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的， 以及上述类型的SiO x N N Y Y薄膜的组合。

公开(公告)号：US20070107655A1

公开(公告)日：2007-05-17

申请号：US11653057

申请日：2007-01-13

申请人： Yasuhiro Mitani ,  Apostolos Voutsas ,  Mark Crowder

发明人： Yasuhiro Mitani ,  Apostolos Voutsas ,  Mark Crowder

IPC分类号： C30B23/00 ,  H01L21/76 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B13/00

摘要： A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.

摘要翻译： 提供了具有子分辨率孔径特征的掩模和使用子分辨率掩模图案来平滑退火表面的方法。 该方法包括：提供具有第一波长的激光束; 向具有具有第一尺寸的孔的第一掩模部分和具有小于所述第一尺寸的具有第二尺寸的孔的第二掩模部分提供掩模; 将具有第一能量密度的激光束施加到衬底区域; 响应于第一能量密度熔化基底区域; 使衬底区域结晶; 将衍射激光束施加到所述衬底区域; 并且响应于衍射激光束，平滑基板区域表面。 在该方法的一些方面中，将衍射激光束施加到衬底区域包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。 第二能量密度在第一能量密度的40％至70％的范围内，优选在第一能量密度的50％至60％的范围内。

公开(公告)号：US20060079100A1

公开(公告)日：2006-04-13

申请号：US11218111

申请日：2005-09-01

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/049 ,  H01L29/66666 ,  H01L29/6675

摘要： A method is provided for forming a silicon nitride (SiNx) film. The method comprises: providing a Si substrate or Si film layer; optionally maintaining a substrate temperature of about 400 degrees C., or less; performing a high-density (HD) nitrogen plasma process where a top electrode is connected to an inductively coupled HD plasma source; and, forming a grown layer of SiNx overlying the substrate. More specifically, the HD nitrogen plasma process includes using an inductively coupled plasma (ICP) source to supply power to a top electrode, independent of the power and frequency of the power that is supplied to the bottom electrode, in an atmosphere with a nitrogen source gas. The SiNx layer can be grown at an initial growth rate of at least about 20 Å in about the first minute.

摘要翻译： 提供了形成氮化硅（SiNx）膜的方法。 该方法包括：提供Si衬底或Si膜层; 可选地保持约400℃或更低的衬底温度; 执行高电压（HD）氮等离子体处理，其中顶电极连接到感应耦合的HD等离子体源; 并且在衬底上形成SiN x的生长层。 更具体地说，HD氮等离子体处理包括使用电感耦合等离子体（ICP）源，在氮源的气氛中，独立于供给底部电极的功率的功率和频率，向顶部电极供电 加油站。 SiNx层可以在大约第一分钟内以至少约的初始生长速率生长。

公开(公告)号：US20060054077A1

公开(公告)日：2006-03-16

申请号：US11263604

申请日：2005-10-31

申请人： Apostolos Voutsas ,  Robert Sposili ,  Mark Crowder

发明人： Apostolos Voutsas ,  Robert Sposili ,  Mark Crowder

IPC分类号： C30B15/14

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1285

摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.

摘要翻译： 提供横向结晶的方法用于增加横向生长长度（LGL）。 将衬底的局部区域加热一段短时间。 当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。 可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

公开(公告)号：US20050236671A1

公开(公告)日：2005-10-27

申请号：US10862761

申请日：2004-06-07

申请人： Paul Schuele ,  Apostolos Voutsas

发明人： Paul Schuele ,  Apostolos Voutsas

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L27/12 ,  H01L29/78624 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78675

摘要： A vertical thin-film transistor (V-TFT) inverter circuit and a method for forming a multi-planar layout TFT inverter circuit have been provided. The method comprising: forming a P-channel TFT with a gate, a first source/drain (S/D) region in a first horizontal plane, and a second S/D region in a second horizontal plane, different than the first horizontal plane; and, forming an N-channel TFT, adjacent the P-channel TFT, with a gate, a third S/D region in a third horizontal plane, and a fourth S/D region in the second horizontal plane, different than the third horizontal plane. Forming a P-channel TFT includes forming a P-channel top-drain vertical TFT (TDV-TFT), and forming an N-channel TFT includes forming an N-channel TDV-TFT.

摘要翻译： 已经提供了垂直薄膜晶体管（V-TFT）逆变器电路和用于形成多平面布局TFT反相器电路的方法。 该方法包括：形成具有栅极的P沟道TFT，第一水平面中的第一源极/漏极（S / D）区域和与第一水平面不同的第二水平面中的第二S / D区域 ; 以及在第三水平面上形成与P沟道TFT相邻的N沟道TFT，第三水平面中的第三S / D区和第二水平面中的第四S / D区，与第三水平面不同 飞机 形成P沟道TFT包括形成P沟道顶漏垂直TFT（TDV-TFT），并且形成N沟道TFT包括形成N沟道TDV-TFT。