公开(公告)号：US20120258255A1

公开(公告)日：2012-10-11

申请号：US13081042

申请日：2011-04-06

Applicant: Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

Inventor： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

IPC: C23C14/00

CPC classification number: C23C14/34 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447

Abstract: The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

Abstract translation: 本公开内容包括用于控制具有共溅射物理气相沉积的膜组合物的方法。 在一个实施方案中，该方法包括：将第一和第二PVD枪定位在衬底上方，选择具有第一和第二组物理特性的第一和第二准直器，将第一和第二准直器定位在第一和第二PVD枪和衬底之间，溅射 在施加第一功率和第二功率时，来自第一和第二PVD枪的至少一种材料通过第一和第二准直器，其中第一PVD枪具有来自第一准直器的第一沉积速率，而第二PVD 枪在第二功率下具有来自第二准直器的第二沉积速率。

公开(公告)号：US20120244644A1

公开(公告)日：2012-09-27

申请号：US13072083

申请日：2011-03-25

Applicant: Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: H01L21/66

CPC classification number: H01L51/0031 ,  H01L51/56

Abstract: A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

Abstract translation: 提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试 所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试 衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

公开(公告)号：US20120090545A1

公开(公告)日：2012-04-19

申请号：US13332813

申请日：2011-12-21

Applicant: Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

Inventor： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC: C23C16/455

CPC classification number: C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

Abstract: A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

Abstract translation: 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20120074376A1

公开(公告)日：2012-03-29

申请号：US13312061

申请日：2011-12-06

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L47/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US20120052694A1

公开(公告)日：2012-03-01

申请号：US13289279

申请日：2011-11-04

Applicant: Anh Ngoc Duong ,  Chi-I Lang

Inventor： Anh Ngoc Duong ,  Chi-I Lang

IPC: H01L21/31

CPC classification number: H01L21/288 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76849

Abstract: Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.

Abstract translation: 描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖 在引入氢醌之后，在衬底的导电区域上方。

公开(公告)号：US08097878B2

公开(公告)日：2012-01-17

申请号：US11714326

申请日：2007-03-05

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L29/12 ,  H01L29/02

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US07888233B1

公开(公告)日：2011-02-15

申请号：US12411243

申请日：2009-03-25

Applicant: Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

Inventor： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC: H01L21/4757

CPC classification number: H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

Abstract: Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

Abstract translation: 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

公开(公告)号：US20090291275A1

公开(公告)日：2009-11-26

申请号：US12471310

申请日：2009-05-22

Applicant: Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

Inventor： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

IPC: B32B3/00 ,  B05D5/12 ,  B05D3/04

CPC classification number: H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

公开(公告)号：US07582555B1

公开(公告)日：2009-09-01

申请号：US11323812

申请日：2005-12-29

Applicant: Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

Inventor： Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC: H01L21/4763

CPC classification number: H01L21/76837 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826

Abstract: The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Abstract translation: 本发明通过提供填充间隙的改进方法来满足这些需要。 在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述​​室中。 控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。 化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。 可流动膜填充基板上的间隙。 然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。 本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

公开(公告)号：US20090061083A1

公开(公告)日：2009-03-05

申请号：US12013729

申请日：2008-01-14

Applicant: Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

Inventor： Tony P. Chiang ,  Sunil Shanker ,  Chi-I Lang

IPC: C23C16/00

CPC classification number: C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

Abstract: A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.