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    Heat sink for a semiconductor chip device
    11.
    发明授权
    Heat sink for a semiconductor chip device 有权
    散热片用于半导体芯片器件

    公开(公告)号：US09543226B1

    公开(公告)日：2017-01-10

    申请号：US14876933

    申请日：2015-10-07

    Applicant: Coriant Advanced Technology, LLC

    Inventor： Nathan A. Nuttall

    IPC: H01L23/34 ,  H01L23/367

    CPC classification number: H01L23/3672 ,  G02B6/4243 ,  G02B6/4269 ,  G02B6/4274 ,  H01L23/13 ,  H01L23/3675 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/552 ,  H01L25/071 ,  H01L25/167

    Abstract: A heat sink for a semiconductor chip device includes cavities in a lower surface thereof for receiving electrical components on a top surface of the semiconductor chip, and a pedestal extending through an opening in the semiconductor chip for contacting electrical components on a bottom surface of the semiconductor chip. A lid may also be provided on the bottom surface of the semiconductor chip for protecting the electrical components and for heat sinking the electrical components to an adjacent device or printed circuit board.

    Abstract translation: 用于半导体芯片器件的散热器包括在其下表面中的用于接收半导体芯片的顶表面上的电气部件的空腔，以及延伸穿过半导体芯片中的开口的基座，用于接触半导体的底表面上的电气部件 芯片。 还可以在半导体芯片的底表面上设置盖子，以保护电气部件并将电气部件散热到相邻的装置或印刷电路板。

    Photonic integrated circuit incorporating a bandgap temperature sensor
    13.
    发明授权
    Photonic integrated circuit incorporating a bandgap temperature sensor 有权
    带有带隙温度传感器的光子集成电路

    公开(公告)号：US09513437B2

    公开(公告)日：2016-12-06

    申请号：US14931076

    申请日：2015-11-03

    Applicant: Coriant Advanced Technology, LLC

    Inventor： Yi Zhang ,  Shuyu Yang ,  Kishore Padmaraju ,  Michael J. Hochberg

    IPC: G02F1/225 ,  G02B6/26 ,  G02B6/134 ,  G02B6/122 ,  G02B6/12

    CPC classification number: G02B6/134 ,  G02B6/1225 ,  G02B2006/12135 ,  G02B2006/12138 ,  G02B2006/12159 ,  G02F1/2257 ,  G02F2202/32

    Abstract: An optical device that includes means for thermal stabilization and control is described. The optical device can be a ring resonator, or another device that requires accurate control of the phase of the optical signal. In an example involving an optical resonator, a thermal stabilization system includes a temperature sensor, a control circuit, and a heater local to the resonator. The temperature sensor can be a bandgap temperature sensor formed of a pair of matched p/n junctions biased in operation at different junction currents.

    Abstract translation: 描述了包括用于热稳定和控制的装置的光学装置。 光学器件可以是环形谐振器，或者需要对光信号的相位进行精确控制的另一器件。 在涉及光学谐振器的示例中，热稳定系统包括温度传感器，控制电路和谐振器局部的加热器。 温度传感器可以是带隙温度传感器，其由在不同结电流处工作而偏置的一对匹配的p / n结形成。

    OPTICAL MODULATOR HAVING A PLURALITY OF MODULATOR SEGMENTS
    15.
    发明申请
    OPTICAL MODULATOR HAVING A PLURALITY OF MODULATOR SEGMENTS 有权
    具有多个调制器部分的光学调制器

    公开(公告)号：US20160103340A1

    公开(公告)日：2016-04-14

    申请号：US14879149

    申请日：2015-10-09

    Applicant: Coriant Advanced Technology, LLC

    Inventor： Ran Ding ,  Thomas Wetteland Baehr-Jones ,  Peter D. Magill ,  Michael J. Hochberg ,  Alexander Rylyakov

    IPC: G02F1/01 ,  G02F1/025

    CPC classification number: G02F1/0121 ,  G02F1/011 ,  G02F1/025 ,  G02F1/035 ,  G02F1/225

    Abstract: An optical modulator apparatus may include a plurality of segment drivers, each segment driver having a unique offset voltage and driving but a portion or a segment of an electro-optical modulator. A modulating electrical signal may be applied to the segment drivers via a plurality of electrical delays. Parameters of the segment drivers may be selected so as to approximate a pre-defined transfer function, which may include a linear or a non-linear transfer function.

    Abstract translation: 光调制器装置可以包括多个段驱动器，每个段驱动器具有唯一的偏移电压并且驱动电光调制器的一部分或一段。 可以经由多个电延迟将调制电信号施加到段驱动器。 可以选择段驱动器的参数以便近似可以包括线性或非线性传递函数的预定义传递函数。

    SIGNAL SWITCHING ARCHITECTURE
    16.
    发明申请
    SIGNAL SWITCHING ARCHITECTURE 审中-公开
    信号切换架构

    公开(公告)号：US20160057517A1

    公开(公告)日：2016-02-25

    申请号：US14832533

    申请日：2015-08-21

    Applicant: Coriant Advanced Technology, LLC

    Inventor： Mariajose Coca ,  Chris R. Zettinger ,  Peter D. Magill ,  Michael J. Hochberg

    IPC: H04Q11/00 ,  H04J14/02 ,  H04L12/933

    CPC classification number: H04Q11/0005 ,  H04J14/02 ,  H04J14/06 ,  H04L49/109 ,  H04Q2011/0016 ,  H04Q2011/0018 ,  H04Q2011/0032 ,  H04Q2011/0035

    Abstract: An architecture for a fiber optic communication system that uses only two levels of switches, Tier 1 and Tier 3, is described. The architecture allows one to omit the conventional Top of Rack switch level and the conventional Tier 2 switch level while maintaining performance and throughput. The cost to construct and install the improved switch architecture is lower than the cost of the conventional architecture. There are also described a number of transceivers that are suitable for use in the architecture disclosed. The transceivers employ silicon PIC chips that include high contrast silicon waveguides ion the chip and that connect to various configurations of optical fibers. The transceivers provide enhanced switching capacity with fewer devices.

    Abstract translation: 描述了仅使用两个级别的交换机（Tier 1和Tier 3）的光纤通信系统的架构。 该架构允许在保持性能和吞吐量的同时省略传统的机架顶部开关级别和传统的二级开关级别。 构建和安装改进的交换机架构的成本低于常规架构的成本。 还描述了适用于所公开的架构的多个收发器。 收发器采用包括高对比度硅波导的硅PIC芯片，并将其连接到各种配置的光纤上。 收发器通过更少的设备提供增强的交换容量。

    Ultra-responsive phase shifters for depletion mode silicon modulators
    20.
    发明授权
    Ultra-responsive phase shifters for depletion mode silicon modulators 有权

    公开(公告)号：US09638942B2

    公开(公告)日：2017-05-02

    申请号：US14840409

    申请日：2015-08-31

    Applicant: Coriant Advanced Technology, LLC

    Inventor： Thomas Baehr-Jones ,  Yang Liu

    IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015 ,  G02F1/225 ,  G02F1/01

    CPC classification number: G02F1/025 ,  G02F1/01 ,  G02F1/011 ,  G02F1/015 ,  G02F1/035 ,  G02F1/0353 ,  G02F1/0356 ,  G02F1/2257 ,  G02F2001/0113 ,  G02F2001/0152

    Abstract: A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

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