Adhesive for semiconductor device, and high productivity method for manufacturing said device

    公开(公告)号:US11608455B2

    公开(公告)日:2023-03-21

    申请号:US16680547

    申请日:2019-11-12

    摘要: Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

    Method for producing joined body, and joining material

    公开(公告)号:US11483936B2

    公开(公告)日:2022-10-25

    申请号:US16762041

    申请日:2018-11-08

    IPC分类号: H05K3/32 H01B1/22

    摘要: Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I): (M1−M2)/M1×100≥1.0  (I) [in Formula (I), M1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M2 represents a non-volatile content in the joining material.]

    Connection structure and method for producing same

    公开(公告)号:US11355469B2

    公开(公告)日:2022-06-07

    申请号:US16957568

    申请日:2018-12-27

    IPC分类号: H01L23/00

    摘要: One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.