公开(公告)号：US6051124A

公开(公告)日：2000-04-18

申请号：US942137

申请日：1997-09-29

申请人： Hidemitsu Aoki

发明人： Hidemitsu Aoki

IPC分类号： G01N27/26 ,  G01N27/447

CPC分类号： G01N27/447 ,  G01N27/44713

摘要： A zeta-potential determining apparatus that determines accurately a zeta potential of a solution with a tendency to generate bubbles due to an applied electric field. This apparatus includes a cell member having a cavity, and positive and negative electrodes located in the cavity. The cell member further has first and second bubble-barrier membranes in vicinities of the positive and negative electrodes. Each of the first and second bubble-barrier membranes blocks bubbles generated in the solution in the vicinity of the corresponding electrodes. Each of the first and second bubble-barrier membranes also allows ions contained in the solution to penetrate therethrough. In use, a dc voltage is applied across the positive and negative electrodes. A solution containing charged monitor particles is supplied and stored in the cavity of the cell member.

摘要翻译： 一种ζ电势测定装置，其准确地确定由于施加的电场而产生气泡的趋势的溶液的ζ电位。 该装置包括具有空腔的单元构件，以及位于空腔中的正极和负极。 电池构件还具有在正极和负极附近的第一和第二气泡阻隔膜。 第一和第二气泡阻隔膜中的每一个阻挡溶液中在相应电极附近产生的气泡。 第一和第二气泡阻挡膜中的每一个还允许包含在溶液中的离子穿过其中。 在使用中，在正极和负极之间施加直流电压。 将含有带电监测器颗粒的溶液供应并存储在电池构件的空腔中。

公开(公告)号：US6036581A

公开(公告)日：2000-03-14

申请号：US84013

申请日：1998-05-26

申请人： Hidemitsu Aoki

发明人： Hidemitsu Aoki

IPC分类号： B08B7/00 ,  B24C1/00 ,  B24C3/18 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC分类号： H01L21/02043 ,  B24C1/003 ,  B24C3/18 ,  H01L21/67028

摘要： A substrate cleaning method includes the steps of supplying a cleaning fluid containing fine argon particles or fine carbon dioxide gas particles to a nozzle unit which is accommodated in a vacuum container and in which spray nozzle holes are arranged to blow the cleaning fluid toward a plurality of spaces, where a plurality of cleaning target substrates are respectively arranged, from front and back sides simultaneously, discharging the fluid outside the vacuum container to maintain an interior of the vacuum container in vacuum, arranging and fixing the plurality of cleaning target substrates respectively in the plurality of spaces and cleaning the cleaning target substrates while vertically moving either one of the cleaning target substrates and the nozzle unit so that the cleaning target substrates and the nozzle unit vertically move relative to each other, and supplying a discharge fluid, which constantly discharges the cleaning fluid from the spaces, from above the cleaning target substrates. An apparatus for practicing this method is also disclosed.

摘要翻译： 基板清洗方法包括以下步骤：向容纳在真空容器中的喷嘴单元提供含有细氩颗粒或细二氧化碳气体颗粒的清洗流体，并且其中布置有喷嘴孔以将清洗流体吹向多个 同时从正面和背面分别布置有多个清洁目标基板的空间，将流体排出真空容器外部，以将真空容器的内部保持在真空状态，将多个清洁目标基板分别布置和固定在 多个空间，并且在垂直移动清洁目标基板和喷嘴单元之一的同时清洁目标基板，使得清洁对象基板和喷嘴单元相对于彼此垂直移动，并且供给排出流体， 从清洁目标的上方清洁空间的液体 底物。 还公开了一种用于实施该方法的装置。

公开(公告)号：US08129287B2

公开(公告)日：2012-03-06

申请号：US12139774

申请日：2008-06-16

申请人： Tatsuya Suzuki ,  Hidemitsu Aoki

发明人： Tatsuya Suzuki ,  Hidemitsu Aoki

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28194 ,  H01L21/31111 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.

摘要翻译： 第一氧化膜和第二氧化膜16分别通过热氧化法形成在半导体衬底10的表面上的第一区域13a和第二区域13b中，并且第一氧化物膜被去除，而第二氧化物 膜16被形成在其上的抗蚀剂层18覆盖，然后用含有有机溶剂如异丙醇作为主要成分的化学溶液除去抗蚀剂层18。 随后，在第一区域13a中形成具有与第二氧化物膜16不同的厚度的第三氧化物膜22。

公开(公告)号：US07718532B2

公开(公告)日：2010-05-18

申请号：US11700003

申请日：2007-01-31

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿法蚀刻通过多晶硅层56的掩模选择性地去除。磷酸和硫酸的液体混合物用于蚀刻剂溶液。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

公开(公告)号：US07687918B2

公开(公告)日：2010-03-30

申请号：US10740813

申请日：2003-12-22

申请人： Yorinobu Kunimune ,  Mieko Hasegawa ,  Takamasa Itou ,  Takeshi Takeda ,  Hidemitsu Aoki

发明人： Yorinobu Kunimune ,  Mieko Hasegawa ,  Takamasa Itou ,  Takeshi Takeda ,  Hidemitsu Aoki

IPC分类号： H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76886 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnect 107 comprises a silicon-lower concentration region 104 and a silicon solid solution layer 106 disposed thereon. The silicon solid solution layer 106 has a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnect 107 to be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layer 106 has the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.

摘要翻译： 本发明提供一种半导体器件，其包括具有显着改善的电迁移电阻和/或抗应力迁移电阻的金属互连。 铜互连107包括硅 - 下部浓度区域104和设置在其上的硅固溶体层106。 硅固溶层106具有这样的结构，其中将硅原子引入构成铜互连件107的晶格结构内，作为晶间点原子或取代原子被布置在晶格内。 硅固溶层106具有其中保留铜（面心立方晶格;晶格常数为3.6埃）的晶格结构，而硅原子被引入作为晶间点原子或取代原子的结构。

公开(公告)号：US20080081445A1

公开(公告)日：2008-04-03

申请号：US11700003

申请日：2007-01-31

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

IPC分类号： H01L21/465 ,  H01L21/283

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

公开(公告)号：US07312160B2

公开(公告)日：2007-12-25

申请号：US10350185

申请日：2003-01-24

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori

IPC分类号： H01L21/302

CPC分类号： H01L21/02074 ,  C11D3/3955 ,  C11D3/3956 ,  C11D7/105 ,  C11D11/0047 ,  C23F1/18 ,  C23F1/30 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/32134

摘要： The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.

摘要翻译： 含有硝酸铈（IV）盐，高碘酸或次氯酸盐的去除溶液可以用于含有铜，银或钯的金属，也可以用于含有其他具有较大氧化还原电位的金属的金属。

公开(公告)号：US07268087B2

公开(公告)日：2007-09-11

申请号：US10900355

申请日：2004-07-28

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Norio Okada ,  Tatsuya Usami ,  Koichi Ohto ,  Takamasa Tanikuni

IPC分类号： H01L21/324

CPC分类号： H01L21/02074 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883

摘要： In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

摘要翻译： 为了提供能够提高互连寿命的半导体器件的制造方法，同时控制其电阻的增加，并且还可以提高制造稳定性; 通过使用包含氮元素的源气体在铜互连17的表面上施加等离子体处理，形成氮化铜层24，然后形成氮化硅膜18。 此时，在氮化铜层24的下方形成有薄的硅化铜层25。

公开(公告)号：US07186354B2

公开(公告)日：2007-03-06

申请号：US09797587

申请日：2001-03-05

申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Masayuki Takashima

发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Masayuki Takashima

IPC分类号： C09K3/00 ,  C23F11/00

CPC分类号： H01L21/02071 ,  C23G1/26 ,  H01L21/32134

摘要： According to the present invention, there is provided an anticorrosive treating concentrate usable for an exposed surface of a metal (e.g. copper or a copper alloy), containing an anticorrosive agent and a precipitation inhibitor and having a pH of 4 to 12 when used in the form of an aqueous solution, in which concentrate the anticorrosive agent is a triazole type compound and/or a derivative thereof and is contained in a concentration of 0.05 to 20% by weight and the precipitation inhibitor is a compound having at least one nitrogen atom but no metal atom in the molecule.

摘要翻译： 根据本发明，提供了一种用于金属（例如铜或铜合金）的暴露表面的防腐蚀处理浓缩物，其含有防腐剂和沉淀抑制剂，并且当用于 形式的水溶液，其中防腐剂为三唑型化合物和/或其衍生物，浓度为0.05〜20重量％，沉淀抑制剂为具有至少一个氮原子的化合物，但为 分子中没有金属原子。

公开(公告)号：US20060234513A1

公开(公告)日：2006-10-19

申请号：US11447962

申请日：2006-06-07

申请人： Tatsuya Suzuki ,  Hidemitsu Aoki

发明人： Tatsuya Suzuki ,  Hidemitsu Aoki

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28194 ,  H01L21/31111 ,  H01L21/823462 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.