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    Method of forming a high-k film on a semiconductor device
    1.
    发明授权
    Method of forming a high-k film on a semiconductor device 有权
    在半导体器件上形成高k膜的方法

    公开(公告)号：US07192835B2

    公开(公告)日：2007-03-20

    申请号：US10854306

    申请日：2004-05-27

    申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    IPC分类号： H01L21/302 ,  H01L21/336

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

    摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

    摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

    Cleaning solution for semiconductor substrate
    5.
    发明授权
    Cleaning solution for semiconductor substrate 失效
    半导体衬底清洗液

    公开(公告)号：US07312186B2

    公开(公告)日：2007-12-25

    申请号：US10750971

    申请日：2004-01-05

    申请人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

    发明人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

    IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D7/08 ,  C11D9/22

    CPC分类号： H01L21/02074 ,  C11D1/722 ,  C11D3/2086 ,  C11D3/2093 ,  C11D3/33 ,  C11D3/361 ,  C11D11/0047 ,  H01L21/02065

    摘要： A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X   (1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X   (2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

    摘要翻译： 一种用于半导体衬底的清洁溶液，其包含式（1）和/或式（2）的非离子表面活性剂，螯合剂和螯合促进剂：<？in-line-formula description =“In-Line Formulas” 结束=“铅”→CH 3 - （CH 2） ＆lt; 2m＆lt; O＆lt; n＆gt; -X（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中l，m和 n独立地表示正数，X表示氢原子或烃基; <？in-line-formula description =“In-line Formulas”end =“lead”？> CH 3 - （CH 2） > - （C b H 2b）O - （C x H 2 H 2） 其中a，b，d，x和y分别代表一个或多个，其中a，b，d，x和y 独立地表示正数，b和x不同，X表示氢原子或烃基。