ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE
    11.
    发明申请
    ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE 有权
    有机电致发光显示装置

    公开(公告)号:US20120248418A1

    公开(公告)日:2012-10-04

    申请号:US13337971

    申请日:2011-12-27

    CPC classification number: H01L51/5231 H01L27/3244

    Abstract: An organic electroluminescent display device includes a first substrate including a display region including a plurality of pixel regions; a first electrode in each pixel region; an organic light emitting layer on the first electrode; a second electrode on the organic light emitting layer and in the display region, wherein the second electrode includes a first metal material having a first wt %, a first work function, and a first sheet resistance, and a second metal material having a second wt % less than the first wt %, a second work function less than the first work function, and a second sheet resistance greater than the first sheet resistance.

    Abstract translation: 一种有机电致发光显示装置包括:第一基板,包括包括多个像素区域的显示区域; 每个像素区域中的第一电极; 在第一电极上的有机发光层; 在所述有机发光层和所述显示区域中的第二电极,其中所述第二电极包括具有第一重量%,第一功函数和第一薄层电阻的第一金属材料和具有第二重量% 小于第一重量%,小于第一功函数的第二功函数,以及大于第一薄层电阻的第二薄层电阻。

    Method for reverse activation of fuel cell
    12.
    发明申请
    Method for reverse activation of fuel cell 审中-公开
    燃料电池反向激活方法

    公开(公告)号:US20090311560A1

    公开(公告)日:2009-12-17

    申请号:US12283459

    申请日:2008-09-11

    Abstract: The present invention provides a method for reverse activation of a fuel cell, which can improve fuel cell performance by performing a first fuel cell activation process and then performing a second fuel cell activation process in which a hydrogen inlet and a hydrogen outlet of the fuel cell are shifted to an air (or oxygen) inlet and an air (or oxygen) outlet of the fuel cell.

    Abstract translation: 本发明提供了一种燃料电池的反向激活方法,其可以通过执行第一燃料电池激活过程并且然后执行第二燃料电池激活过程来改善燃料电池性能,其中燃料电池的氢气入口和氢气出口 被转移到燃料电池的空气(或氧气)入口和空气(或氧气)出口。

    MEMORY CELL DEVICE HAVING VERTICAL CHANNEL AND DOUBLE GATE STRUCTURE
    13.
    发明申请
    MEMORY CELL DEVICE HAVING VERTICAL CHANNEL AND DOUBLE GATE STRUCTURE 有权
    具有垂直通道和双门结构的存储单元设备

    公开(公告)号:US20090242965A1

    公开(公告)日:2009-10-01

    申请号:US12309959

    申请日:2007-09-20

    CPC classification number: H01L27/115 H01L27/11568

    Abstract: A memory cell device having a vertical channel and a double gate structure is provided. More specifically, a memory cell device having a vertical channel and a double gate structure is characterized by having a pillar active region with a predetermined height, which is including a first semiconductor layer forming a first source/drain region, a second semiconductor layer being placed under the first semiconductor layer with a predetermined distance and forming a second source/drain region, and a third semiconductor layer forming a body region and a channel region between the first semiconductor layer and the second semiconductor layer, and therefore, there is no need for unnecessary contacts when it is used as a unit cell for any type of memory array, not to speak of NOR type flash memory array. And the present invention makes to program/erase more effectively and increase the read speed and the amount of sensing current.

    Abstract translation: 提供具有垂直通道和双栅极结构的存储单元器件。 更具体地说,具有垂直沟道和双栅极结构的存储单元器件的特征在于具有预定高度的柱状有源区,其包括形成第一源极/漏极区的第一半导体层,放置第二半导体层的第二半导体层 在第一半导体层之下具有预定距离并形成第二源极/漏极区域,以及形成第一半导体层和第二半导体层之间的体区域和沟道区域的第三半导体层,因此不需要 当它被用作任何类型的存储器阵列的单位单元时,不用说NOR型闪存阵列就是不必要的接触。 并且本发明使得更有效地编程/擦除并增加读取速度和感测电流的量。

    Body biasing structure of SOI
    14.
    发明授权
    Body biasing structure of SOI 有权
    SOI的主体偏置结构

    公开(公告)号:US07432552B2

    公开(公告)日:2008-10-07

    申请号:US11423696

    申请日:2006-06-12

    CPC classification number: H01L29/78615

    Abstract: A body biasing structure of devices connected in series on an SOI substrate is provided. According to some embodiments, the shallow junction of common source/drain regions enables all devices to bias by only one body contact on an SOI substrate like a conventional bulk MOSFET, and the floating body effect on an SOI substrate can be prevented.

    Abstract translation: 提供了在SOI衬底上串联连接的器件的体偏置结构。 根据一些实施例,公共源极/漏极区的浅结使得所有器件只能像SOI传统体MOSFET在SOI衬底上仅偏移一个体接触,并且可以防止在SOI衬底上的浮体效应。

    Channel selection in power line communications
    20.
    发明授权
    Channel selection in power line communications 有权
    电力线通信中的通道选择

    公开(公告)号:US08995461B2

    公开(公告)日:2015-03-31

    申请号:US13363391

    申请日:2012-02-01

    Abstract: Systems and methods for channel selection in power line communications (PLC) are described. In some embodiments, a method may include defining a plurality of frames, each frame having a plurality of time slots. The method may also include assembling a pair of beacon and bandscan packets within each of time slot of each frame. The method may further include sequentially transmitting each of the frames over a corresponding one of a plurality of different frequency bands. In some implementations, each bandscan packet may include a slot index indicating a position of its time slot within its respective frame and/or a band index indicating one of the plurality of different frequency bands. In response to having transmitted the plurality of frames, the method may include receiving one or more packets indicating a selection of one or more of the plurality of different frequency bands to be used in subsequent communications.

    Abstract translation: 描述了电力线通信(PLC)中通道选择的系统和方法。 在一些实施例中,方法可以包括定义多个帧,每个帧具有多个时隙。 该方法还可以包括在每帧的每个时隙内组合一对信标和带扫描分组。 该方法还可以包括在多个不同频带中的相应一个上顺序发送每个帧。 在一些实现中,每个带扫描分组可以包括指示其在其各自帧内的时隙的位置的时隙索引和/或指示多个不同频带之一的频带索引。 响应于已经发送了多个帧,该方法可以包括接收一个或多个分组,指示将在后续通信中使用的多个不同频带中的一个或多个的选择。

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