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20 条记录 (耗时 0.02 秒)

    Multi-range doping of epitaxial III-V layers from a single source
    11.
    发明授权
    Multi-range doping of epitaxial III-V layers from a single source 失效
    从单个源的多范围掺杂外延III-V层

    公开(公告)号：US4407694A

    公开(公告)日：1983-10-04

    申请号：US276104

    申请日：1981-06-22

    申请人： Victor K. Eu ,  Milton Feng ,  Timothy T. Zielinski ,  James M. Whelan

    发明人： Victor K. Eu ,  Milton Feng ,  Timothy T. Zielinski ,  James M. Whelan

    IPC分类号： H01L21/205 ,  H01L21/223

    CPC分类号： H01L21/02576 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S118/90 ,  Y10S252/951 ,  Y10S438/925

    摘要： Silicon doping of GaAs epitaxial layers grown using the AsCl.sub.3 /H.sub.2 /GaAs:Ga CVD system is accomplished using AsCl.sub.3 :SiCl.sub.4 liquid doping solutions. These solutions can be readily prepared with reproducible compositions and provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H.sub.2 flow rate and by varying the temperature of the doping solution. Doping levels may range from about 5.times.10.sup.15 to 5.times.10.sup.19 cm.sup.-3 by adjusting the mole fraction of SiCl.sub.4 in the doping solution and the H.sub.2 flow rate to change the mole fraction of P.sub.HCl. The epitaxial layers doped using this technique have excellent room temperature and liquid nitrogen mobilities for electron concentrations between 1.times.10.sup.16 cm.sup.-3 and 8.times.10.sup.18 cm.sup.-3. This doping method is particularly useful for the growth of GaAs epitaxial layers for FET devices.

    摘要翻译： 使用AsCl3 / H2 / GaAs：Ga CVD系统生长的GaAs外延层的硅掺杂使用AsCl 3：SiCl 4液体掺杂溶液来实现。 这些溶液可以容易地用可重复组合物制备并提供优异的掺杂控制。 可以通过调节H2流速和改变掺杂溶液的温度来实现掺杂水平的微调。 通过调节掺杂溶液中SiCl 4的摩尔分数和H 2流速来改变PHCl的摩尔分数，掺杂量可以在约5×10 15至5×10 19 cm -3的范围内。 使用该技术掺杂的外延层对于1×10 16 cm -3和8×10 18 cm -3之间的电子浓度具有优异的室温和液氮迁移率。 该掺杂方法对于用于FET器件的GaAs外延层的生长特别有用。

    Elastomeric mounting
    15.
    发明授权
    Elastomeric mounting 失效
    弹性安装

    公开(公告)号：US5518227A

    公开(公告)日：1996-05-21

    申请号：US211712

    申请日：1994-06-21

    申请人： James M. Whelan

    发明人： James M. Whelan

    IPC分类号： F16F15/08 ,  B61F5/00 ,  F16F1/371 ,  F16F1/42 ,  F16F1/36

    CPC分类号： B61F5/00 ,  F16F1/3713 ,  F16F1/422 ,  B60G2202/143 ,  B60G2204/125 ,  B60G2204/4504 ,  F16F2236/02

    摘要： An elastomeric mounting comprises a body of elastomeric material having end regions the surfaces which are bonded to respective confronting surfaces of a pair of rigid end members for compression therebetween. A first of the rigid end members (32) extends radially outwardly from a longitudinal compression axis (19) of the mounting to lie beyond the bonded interface (35). The first end member has outwards of the bonded interface an abutment face (34) which is contacted by the elastomeric body when subject to compression loading, and a discontinuity is defined by the first rigid end member whereby the interface and abutment face depart from a wholly co-planar form.

    摘要翻译： PCT No.PCT / GB92 / 01944 Sec。 371日期：1994年6月21日 102（e）日期1994年6月21日PCT提交1992年10月22日PCT公布。 出版物WO93 / 08413 日期：1993年4月29日。弹性体安装件包括具有端部区域的弹性体材料体，其表面被结合到一对刚性端部构件的相应面对面，用于在它们之间压缩。 刚性端部构件（32）中的第一个从安装件的纵向压缩轴线（19）径向向外延伸以超出结合界面（35）。 第一端构件具有接合界面的外侧，邻接面（34），其在经受压缩载荷时与弹性体相接触，并且不连续性由第一刚性端构件限定，由此界面和邻接面离开全部 共面形式。

    Detector grade mercuric iodide
    16.
    发明授权
    Detector grade mercuric iodide 失效
    检测级碘化汞

    公开(公告)号：US4554150A

    公开(公告)日：1985-11-19

    申请号：US542250

    申请日：1983-10-14

    申请人： James M. Whelan

    发明人： James M. Whelan

    IPC分类号： C01G13/04 ,  C30B23/00 ,  C01B9/00

    CPC分类号： C01G13/04 ,  C30B23/00 ,  C30B29/12

    摘要： Chemically pure mercuric iodide is purified to form detector-grade mercuric iodide and mercuric iodide semi-conductor crystals by vaporization in an inert gas stream containing deliberate addition of oxygen and iodine vapor and crystallizing the vaporized mercuric iodide in order to remove undesired metallic iodides and organic residues, followed by the elimination of undesired oxides of mercury by the revaporization in a second inert gas stream in the presence of reducing vapors such as carbon monoxide, hydrogen iodide or iodine and recrystallization to produce detector-grade mercuric iodide, and crystal growth in such a reducing atmosphere produces semi-conductor crystals.

    摘要翻译： 将化学纯的碘化汞纯化，形成检测级碘化汞和碘化汞半导体晶体，在含有有意加入氧气和碘蒸气的惰性气流中蒸发，并使蒸发的碘化汞结晶，以除去不需要的金属碘化物和有机物 残留物，然后在还原蒸气如一氧化碳，碘化氢或碘的存在下，通过在第二惰性气体流中的再蒸发消除不想要的氧化汞，并重结晶以产生检测器级碘化汞，并且在其中生长晶体 还原气氛产生半导体晶体。

    Process for densifying polycrystalline articles
    17.
    发明授权
    Process for densifying polycrystalline articles 失效
    多晶制品致密化方法

    公开(公告)号：US4146379A

    公开(公告)日：1979-03-27

    申请号：US827279

    申请日：1977-08-24

    申请人： Stephen M. Copley ,  Virendra V. S. Rana ,  James M. Whelan

    发明人： Stephen M. Copley ,  Virendra V. S. Rana ,  James M. Whelan

    IPC分类号： C04B35/053 ,  C04B35/515 ,  C04B35/64 ,  C04B38/00 ,  C03B23/20 ,  C03C3/22 ,  C03C15/00

    CPC分类号： C04B35/515 ,  C04B35/053 ,  C04B35/64 ,  C04B38/00 ,  Y10S501/904

    摘要： A polycrystalline article is densified to provide either a nonporous body or a body with controlled interconnected porosity. A mixture of fine powders of the polycrystalline material and a sintering aid is compacted and outgassed under reduced pressure. The outgassed compact is then subjected to a permeation anneal step in which it is heated in a closed chamber to a temperature sufficient to form a liquid of the sintering aid, but under pressure conditions which inhibit evaporation of the sintering aid. The sintering aid can then be leached out to provide a densified article having interconnected porosity. Alternatively, the sintering aid can be leached out at elevated temperature, further densifying the compact to form a substantially nonporous body. Alternatively, the sintering aid can be removed by subjecting the densified article to an evaporation anneal step in which the article is heated to evaporate the sintering aid, further densifying the compact to form a substantially nonporous article. Apparatus is provided containing interconnected sections to accomplish the foregoing process. When applied to magnesium fluoride, a transparent polycrystalline body is obtained as a new article of manufacture which is substantially uniformly transparent to infrared radiation throughout the entire range of 0.7-8 microns.

    摘要翻译： 多晶制品被致密化以提供具有受控的互连孔隙的无孔体或主体。 将多晶材料和烧结助剂的细粉末的混合物在减压下压实和脱气。 然后将脱气的压块进行渗透退火步骤，其中将其在密闭室中加热到足以形成烧结助剂的液体的温度，但在抑制烧结助剂蒸发的压力条件下进行。 然后可以将烧结助剂浸出以提供具有互连多孔性的致密制品。 或者，可以在升高的温度下将烧结助剂浸出，进一步致密化以形成基本上无孔的体。 或者，可以通过使致密制品经受蒸发退火步骤来除去烧结助剂，其中加热制品以蒸发烧结助剂，进一步致密化以形成基本上无孔的制品。 提供了包含互连部分以实现上述过程的装置。 当应用于氟化镁时，获得透明多晶体作为新的制品，其在0.7-8微米的整个范围内对红外辐射基本均匀透明。

    Oxidation catalyst
    19.
    发明授权
    Oxidation catalyst 失效
    氧化催化剂

    公开(公告)号：US3976599A

    公开(公告)日：1976-08-24

    申请号：US556670

    申请日：1975-03-10

    申请人： James M. Whelan

    发明人： James M. Whelan

    IPC分类号： B01D53/86 ,  B01D53/94 ,  B01J23/76 ,  C01B21/26 ,  C01C3/02 ,  B01J23/10 ,  B01J23/22 ,  B01J23/26 ,  B01J23/74

    CPC分类号： B01D53/945 ,  B01D53/86 ,  B01D53/8603 ,  B01J23/76 ,  C01B21/265 ,  C01C3/02 ,  F23C13/08 ,  Y02T10/22

    摘要： A class of ceramic mixed oxide, nonstoichiometric electrically neutral, rare-earth-type catalyst containing rare-earth-type elements, elements of the first transition metal series and Zirconium, Tin or Thorium and optionally the alkaline earth metals. The catalyst has the following formula:W.sub.k X.sub.n Y.sub.(1-k-n) ZO.sub.(3.sub.+-m.sub.') (I)wherein:W is Zirconium, Tin or Thorium or mixture thereof;X is an alkaline earth metal or mixture thereof;J is a rare-earth-type element or mixture thereof;Z is a metal of the first transition series or a mixture thereof, at least 0.01% of said metal having an oxidation state other than +3;k is a number having a value of between 0 and about 0.1;m' is a number having a value of from 0 to about 0.26, provided m has a value other than 0 when n has a value of 0; andn is a number having a value from 0 to about 0.51, provided when n has a value of 0, k has a value of between 0 and about 0.05.

    摘要翻译： 一类陶瓷混合氧化物，非化学计量电中性稀土类催化剂，含稀土元素，第一过渡金属系列元素，锆，锡或钍以及任选的碱土金属。 该催化剂具有下式：